MMDT3946DW Datasheet and Replacement

SOT-363 Plastic-Encapsulate Transistors DUAL TRANSISTOR (NPN+PNP) MMDT3946DWSOT-363 FEATURES Complementary Pair One 3904-Type NPN One 3906-Type PNP Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching MAKING: K46 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Co

MMDT3946 40V COMPLEMENTARY NPN-PNP SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data Complementary Pair One 3904-Type NPN Case: SOT363 One 3906-Type PNP Case Material: Molded Plastic, Green Molding Compound. Ultra-Small Surface Mount Package UL Flammability Classification Rating 94V-0 Epitaxial Planar Die Construction Moisture Sensitivity: Lev

MMDT3946LP4 COMPLEMENTARY NPN / PNP SURFACE MOUNT TRANSISTORS Features Complementary Pair: One 3904 (NPN) and One 3906 (PNP) DFN1310H4-6 Epitaxial Planar Die Construction Dim Min Max Typ Ideally Suited for Automated Assembly Processes Lead Free by Design/RoHS Compliant (Note 1) A 1.25 1.38 1.30 Green Device (Note 2) Top View B 0.95 1.08 1.00Mecha

MMDT3946Features Complementary Pari: NPN(3904), PNP(3906) Ideal for Low Power Amplification and SwitchingNPN/PNP Epitaxial Planar Die Construction Halogen Free. Green Device (Note 1)Small Signal Surface Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingMount Transistors Lead Free Finish/RoHS Compliant ("P" Suffix Designates Ro

MMDT3946 NPN / PNP Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C indicates halogen-free. SOT-363 FEATURE A Complementary PairE One 3904-Type NPN LOne 3906-Type PNP Epitaxial Planer Die Construction Ideal for Low Power Amplification and Switching B.MARKING FC HJD G K46 Millimeter MillimeterR

JC ET DUAL TRANSISTOR (NPN+PNP) 6 5 Complementary Pair 4 One 3904-Type NPN One 3906-Type PNP 123 Epitaxial Planar Die Construction Ideal for Low Po

MMDT3946 Complementary NPN/PNP TransistorSOT-363Features Complementary Pair One 3904-Type NPN, One 3906-Type PNP Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching MAKING: K46 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 V VC

MMDT3946COMPLEMENTARY NPN/PNP GENERAL PURPOSE SWITCHING TRANSISTOR40 Volt POWER 225 mWattVOLTAGEFEATURES Epitaxial silicon, planar design Collector-emitter voltage VCE = 40V Collector current Ic = 200mA Transition Frequency> 300MHz fT@IC=10mA,VCE=20V, f=100MHz Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249

MMDT3946Small Surface Mount Transistor FEATURES Complementary pair. One 3904-Type NPN. One 3906-Type PNP. Ideal for low power amplification and switching. Ultra-Small surface mount package. Expitaxial planar die construction. SOT-363 APPLICATIONS General switching and amplification. MAXIMUM RATIPN Section @ Ta=25 unless otherwise specified SYMBOL PARAMETE