All Transistors. 2SA1186Y Datasheet

 

2SA1186Y Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SA1186Y
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 150 V
   Maximum Collector-Emitter Voltage |Vce|: 150 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 60 MHz
   Collector Capacitance (Cc): 110 pF
   Forward Current Transfer Ratio (hFE), MIN: 90
   Noise Figure, dB: -
   Package: TO3P

 2SA1186Y Transistor Equivalent Substitute - Cross-Reference Search

   

2SA1186Y Datasheet (PDF)

 ..1. Size:197K  cn sptech
2sa1186o 2sa1186p 2sa1186y.pdf

2SA1186Y
2SA1186Y

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1186DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -150V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2837APPLICATIONSFor audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -150 VCBOV Collector-Emit

 7.1. Size:191K  jmnic
2sa1186.pdf

2SA1186Y
2SA1186Y

JMnic Product Specification Silicon PNP Power Transistors 2SA1186 DESCRIPTION With TO-3PN package High current capability Complement to type 2SC2837 APPLICATIONS Audio and general purpose applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=)

 7.2. Size:27K  sanken-ele
2sa1186.pdf

2SA1186Y

LAPT 2SA1186Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2837)Application : Audio and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)SymbolSymbol Ratings Unit Conditions Ratings Unit0.24.80.415.60.1ICBO VCB=150V 100max A 9.6 2.0VCBO 150 VIEBO VEB=5V 100m

 7.3. Size:199K  inchange semiconductor
2sa1186.pdf

2SA1186Y
2SA1186Y

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1186DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -150V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2837Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SB1587 | 2SA1306BY

 

 
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