2SA1186Y PDF and Equivalents Search

 

2SA1186Y Specs and Replacement

Type Designator: 2SA1186Y

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 150 V

Maximum Collector-Emitter Voltage |Vce|: 150 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 60 MHz

Collector Capacitance (Cc): 110 pF

Forward Current Transfer Ratio (hFE), MIN: 90

Noise Figure, dB: -

Package: TO3P

 2SA1186Y Substitution

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2SA1186Y datasheet

 ..1. Size:197K  cn sptech

2sa1186o 2sa1186p 2sa1186y.pdf pdf_icon

2SA1186Y

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1186 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -150V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC2837 APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -150 V CBO V Collector-Emit... See More ⇒

 7.1. Size:191K  jmnic

2sa1186.pdf pdf_icon

2SA1186Y

JMnic Product Specification Silicon PNP Power Transistors 2SA1186 DESCRIPTION With TO-3PN package High current capability Complement to type 2SC2837 APPLICATIONS Audio and general purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) ... See More ⇒

 7.2. Size:27K  sanken-ele

2sa1186.pdf pdf_icon

2SA1186Y

LAPT 2SA1186 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2837) Application Audio and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-100(TO3P) Symbol Symbol Ratings Unit Conditions Ratings Unit 0.2 4.8 0.4 15.6 0.1 ICBO VCB= 150V 100max A 9.6 2.0 VCBO 150 V IEBO VEB= 5V 100m... See More ⇒

 7.3. Size:199K  inchange semiconductor

2sa1186.pdf pdf_icon

2SA1186Y

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1186 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -150V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC2837 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO... See More ⇒

Detailed specifications: 2SA1182O, 2SA1182Y, 2SA1183, 2SA1184, 2SA1185, 2SA1186, 2SA1186O, 2SA1186P, S8050, 2SA1187, 2SA1188, 2SA1189, 2SA119, 2SA1190, 2SA1191, 2SA1193, 2SA1194

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