BFP405F Datasheet, Equivalent, Cross Reference Search
Type Designator: BFP405F
SMD Transistor Code: AL*
Material of Transistor: SiGe
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.075 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 4.5 V
Maximum Emitter-Base Voltage |Veb|: 1.5 V
Maximum Collector Current |Ic max|: 0.025 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 18000 MHz
Collector Capacitance (Cc): 0.05 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TSFP4-1
BFP405F Transistor Equivalent Substitute - Cross-Reference Search
BFP405F Datasheet (PDF)
bfp405f.pdf
BFP405FLow profile wideband silicon NPN RF bipolar transistorProduct descriptionThe BFP405F is a low noise device based on a grounded emitter (SIEGET) that is part ofInfineons established fourth generation RF bipolar transistor family. Its transitionfrequency fT of 25 GHz and low current characteristics make the device suitable foroscillators up to 12 GHz. It remains cost comp
bfp405.pdf
SIEGET25 BFP405NPN Silicon RF TransistorFor Low Current ApplicationsFor Oscillators up to 12 GHzNoise Figure F = 1.15 dB at 1.8 GHzOutstanding Gms = 22 dB at 1.8 GHzTransition Frequency fT = 25 GHzGold metalization for high reliability SIEGET25-LineSiemens Grounded Emitter Transistor-25 GHz fT-LineESD: Electrostatic discharge sensitive device,observe hand
bfp405.pdf
BFP405Low Noise Silicon Bipolar RF Transistor For low current applications3 For oscillators up to 12 GHz241 Minimum noise figure NFmin = 1.25 dB at 1.8 GHz Outstanding Gms = 23 dB at 1.8 GHz Pb-free (RoHS compliant) and halogen-free package with visible leads Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive devi
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
