BFP405F Datasheet. Specs and Replacement
Type Designator: BFP405F
SMD Transistor Code: AL*
Material of Transistor: SiGe
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.075 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 4.5 V
Maximum Emitter-Base Voltage |Veb|: 1.5 V
Maximum Collector Current |Ic max|: 0.025 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 18000 MHz
Collector Capacitance (Cc): 0.05 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TSFP4-1
BFP405F Substitution
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BFP405F datasheet
BFP405F Low profile wideband silicon NPN RF bipolar transistor Product description The BFP405F is a low noise device based on a grounded emitter (SIEGET ) that is part of Infineon s established fourth generation RF bipolar transistor family. Its transition frequency fT of 25 GHz and low current characteristics make the device suitable for oscillators up to 12 GHz. It remains cost comp... See More ⇒
SIEGET 25 BFP405 NPN Silicon RF Transistor For Low Current Applications For Oscillators up to 12 GHz Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 22 dB at 1.8 GHz Transition Frequency fT = 25 GHz Gold metalization for high reliability SIEGET 25-Line Siemens Grounded Emitter Transistor- 25 GHz fT-Line ESD Electrostatic discharge sensitive device, observe hand... See More ⇒
BFP405 Low Noise Silicon Bipolar RF Transistor For low current applications 3 For oscillators up to 12 GHz 2 4 1 Minimum noise figure NFmin = 1.25 dB at 1.8 GHz Outstanding Gms = 23 dB at 1.8 GHz Pb-free (RoHS compliant) and halogen-free package with visible leads Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive devi... See More ⇒
Detailed specifications: BC858BL3, BF776, BFP182R, BFP182W, BFP183W, BFP193W, BFP196, BFP405, BC327, BFP410, BFP420, BFP450, BFP520F, BFP540, BFP540ESD, BFP540FESD, BFP640
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