BFP540FESD Datasheet, Equivalent, Cross Reference Search
Type Designator: BFP540FESD
SMD Transistor Code: AU*
Material of Transistor: SiGe
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 10 V
Maximum Collector-Emitter Voltage |Vce|: 4.5 V
Maximum Emitter-Base Voltage |Veb|: 1 V
Maximum Collector Current |Ic max|: 0.08 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 21000 MHz
Collector Capacitance (Cc): 0.16 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TSFP4
BFP540FESD Transistor Equivalent Substitute - Cross-Reference Search
BFP540FESD Datasheet (PDF)
bfp540fesd.pdf
BFP540FESDLow Noise Silicon Bipolar RF Transistor For ESD protected high gain low noise amplifier32 Excellent ESD performance41 typical value 1000 V (HBM) Outstanding Gms = 20 dB Minimum noise figure NFmin = 0.9 dB Pb-free (ROHS compliant) and halogen-free thin small flat package with visible leads Qualification report according to AEC-Q101 availableES
bfp540.pdf
BFP540Low Noise Silicon Bipolar RF Transistor For highest gain and low noise amplifier3 Outstanding Gms = 21.5 dB at 1.8 GHz24 Minimum noise figure NFmin = 0.9 dB at 1.8 GHz 1 Pb-free (RoHS compliant) and halogen-free package with visible leads Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device, observe handling p
bfp540esd.pdf
BFP540ESDSurface mount robust silicon NPN RF bipolar transistorProduct descriptionThe BFP540ESD is a low noise device based on a grounded emitter (SIEGET) that is partof Infineons established fifth generation RF bipolar transistor family. Its ESD structureprovides high robustness. It remains cost competitive without compromising on ease ofuse.Feature list Minimum noise
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
