All Transistors. BFP843 Datasheet

 

BFP843 Datasheet, Equivalent, Cross Reference Search

Type Designator: BFP843

SMD Transistor Code: T2*

Material of Transistor: SiGe

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.125 W

Maximum Collector-Base Voltage |Vcb|: 2.9 V

Maximum Collector-Emitter Voltage |Vce|: 2.25 V

Maximum Collector Current |Ic max|: 0.055 A

Max. Operating Junction Temperature (Tj): 150 °C

Collector Capacitance (Cc): 0.06 pF

Forward Current Transfer Ratio (hFE), MIN: 150

Noise Figure, dB: -

Package: SOT343

BFP843 Transistor Equivalent Substitute - Cross-Reference Search

 

BFP843 Datasheet (PDF)

..1. bfp843.pdf Size:528K _infineon

BFP843 BFP843

BFP843Robust low noise broadband pre-matched RF bipolar transistorProduct descriptionThe BFP843 is a robust low noise broadband pre-matched RF heterojunction bipolartransistor (HBT).Feature list Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power,1.5 kV HBM ESD hardness High transition frequency enables best in class noise performanc

0.1. bfp843f.pdf Size:455K _infineon

BFP843 BFP843

BFP843FSiGe:C NPN RF bipolar transistorProduct descriptionThe BFP843F is a robust low noise broadband pre-matched RF heterojunction bipolartransistor (HBT).Feature list Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power,1.5 kV HBM ESD hardness High transition frequency to enable best in class noise performance at high frequencies:

9.1. bfp840fesd.pdf Size:464K _infineon

BFP843 BFP843

BFP840FESDSiGe:C NPN RF bipolar transistorProduct descriptionThe BFP840FESD is a discrete RF heterojunction bipolar transistor (HBT) with anintegrated ESD protection suitable for 5 GHz band applications.Feature list Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power,1.5 kV HBM ESD hardness High transition frequency fT = 85 GHz to en

9.2. bfp840esd.pdf Size:554K _infineon

BFP843 BFP843

BFP840ESDSiGe:C NPN RF bipolar transistorProduct descriptionThe BFP840ESD is a discrete RF heterojunction bipolar transistor (HBT) with anintegrated ESD protection suitable for 5 GHz band applications.Feature list Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power,1.5 kV HBM ESD hardness High transition frequency fT = 80 GHz to enab

 9.3. bfp842esd.pdf Size:526K _infineon

BFP843 BFP843

BFP842ESDSiGe:C NPN RF bipolar transistorProduct descriptionThe BFP842ESD is a high performance RF heterojunction bipolar transistor (HBT) with anintegrated ESD protection suitable for 2.3 - 3.5 GHz LNA applications.Feature list Unique combination of high end RF performance and robustness: 16 dBm maximum RF input power,1 kV HBM ESD hardness High transition frequency fT = 5

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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