All Transistors. L2SC3838LT3G Datasheet

 

L2SC3838LT3G Datasheet and Replacement


   Type Designator: L2SC3838LT3G
   SMD Transistor Code: AD
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 11 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1400 MHz
   Collector Capacitance (Cc): 0.8 pF
   Forward Current Transfer Ratio (hFE), MIN: 56
   Noise Figure, dB: -
   Package: SOT23

 L2SC3838LT3G Transistor Equivalent Substitute - Cross-Reference Search

   

L2SC3838LT3G Datasheet (PDF)

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L2SC3838LT3G

LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor Features L2SC3838LT1G 1.High transition frequency.(Typ.fT=3.2GHz) S-L2SC3838LT1G 2.Small rbb Cc and high gain.(Typ.4ps) 3.Small NF. 4.We declare that the material of product compliance with RoHS requirements. 3 5.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-... See More ⇒

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 l2sc3838lt1g.pdf pdf_icon

L2SC3838LT3G

LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor Features L2SC3838LT1G 1.High transition frequency.(Typ.fT=3.2GHz) S-L2SC3838LT1G 2.Small rbb Cc and high gain.(Typ.4ps) 3.Small NF. 4.We declare that the material of product compliance with RoHS requirements. 3 5.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-... See More ⇒

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L2SC3838LT3G

LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor L2SC3838QLT1G Features 1.High transition frequency.(Typ.fT=3.2GHz) S-L2SC3838QLT1G 2.Small rbb Cc and high gain.(Typ.4ps) 3.Small NF. 4.We declare that the material of product compliance with RoHS requirements. 3 4.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AE... See More ⇒

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L2SC3838LT3G

LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor L2SC3838NLT1G Features 1.High transition frequency.(Typ.fT=3.2GHz) 3 2.Small rbb Cc and high gain.(Typ.4ps) 3.Small NF. 4.We declare that the material of product compliance with RoHS requirements. 1 2 MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol Value Unit Collector-Base Voltage V 20 V CBO ... See More ⇒

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Datasheet: L2SC1623RLT3G , L2SC1623SLT3G , L2SC2411KRLT3G , L2SC2412KQLT3G , L2SC2412KRLT3G , L2SC2412KSLT3G , L2SC3356LT3G , L2SC3356WT3G , TIP32C , L2SC4081QT3G , L2SC4081RT3G , L2SC4081ST3G , L2SC4617QT3G , L2SC4617RT3G , L2SC4617ST3G , L8050HPLT3G , L8050HQLT3G .

History: BD373C-10 | 2SD1624U | L2SB772P | BD379-16 | 3DD167E | MRF857S | RN1707JE

Keywords - L2SC3838LT3G transistor datasheet

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