L9012PLT3G Datasheet, Equivalent, Cross Reference Search
Type Designator: L9012PLT3G
SMD Transistor Code: 12P
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT-23
L9012PLT3G Transistor Equivalent Substitute - Cross-Reference Search
L9012PLT3G Datasheet (PDF)
l9012plt1g l9012plt3g l9012qlt1g l9012qlt3g l9012rlt1g l9012rlt3g l9012slt1g l9012slt3g l9012rlt3g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconL9012PLT1GFEATUREWe declare that the material of product compliance with RoHS requirements. SeriesS- Prefix for Automotive and Other Applications Requiring Unique SiteS-L9012PLT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. SeriesDEVICE MARKING AND ORDERING INFORMATIONDevice Marking
l9012plt1g l9012plt3g l9012qlt1g l9012qlt3g l9012rlt1g l9012rlt3g l9012slt1g l9012slt3g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconL9012PLT1GFEATURE SeriesWe declare that the material of product compliance with RoHS requirements.S-L9012PLT1GS- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. SeriesDEVICE MARKING AND ORDERING INFORMATIONDevice Marking
l9012plt1g l9012qlt1g l9012rlt1g l9012slt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconL9012PLT1GFEATURE SeriesWe declare that the material of product compliance with RoHS requirements.S-L9012PLT1GS- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. SeriesDEVICE MARKING AND ORDERING INFORMATIONDevice Marking
l9012plt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconL9012PLT1GFEATURE SeriesWe declare that the material of product compliance with RoHS requirements.S-L9012PLT1GS- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. SeriesDEVICE MARKING AND ORDERING INFORMATIONDevice Marking
l9012.pdf
LESHAN RADIO COMPANY, LTD.PNP Epitaxial Silicon L9012Transistor1W Output Amplifier of Potable Radios in Class B Push-pull Operation. High total power dissipation. (PT=625mW) High Collector Current. (IC= -500mA) Complementary to L9013 TO-921 Excellent hFE linearity.1. Emitter 2. Base 3. CollectorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbo
l9012qlt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconL9012PLT1GFEATURE SeriesWe declare that the material of product compliance with RoHS requirements.S-L9012PLT1GS- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. SeriesDEVICE MARKING AND ORDERING INFORMATIONDevice Marking
l9012slt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconL9012PLT1GFEATURE SeriesWe declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other Applications Requiring Unique Site S-L9012PLT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. SeriesDEVICE MARKING AND ORDERING INFORMATIONDevice Marking
l9012rlt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconL9012PLT1GFEATUREWe declare that the material of product compliance with RoHS requirements. SeriesS- Prefix for Automotive and Other Applications Requiring Unique SiteS-L9012PLT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. SeriesDEVICE MARKING AND ORDERING INFORMATIONDevice Marking
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
