L9014SLT3G Datasheet and Replacement
Type Designator: L9014SLT3G
SMD Transistor Code: 14S
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 300
Noise Figure, dB: -
Package: SOT-23
L9014SLT3G Transistor Equivalent Substitute - Cross-Reference Search
L9014SLT3G Datasheet (PDF)
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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L9014QLT1G FEATURE Complementary to L9014. Series We declare that the material of product compliance with RoHS requirements. S-L9014QLT1G S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. DEVICE MARKING AND ORDERING INF... See More ⇒
l9014qlt1g l9014rlt1g l9014slt1g l9014tlt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L9014QLT1G FEATURE Complementary to L9014. Series We declare that the material of product compliance with RoHS requirements. S-L9014QLT1G S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. DEVICE MARKING AND ORDERING INF... See More ⇒
l9014slt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L9014QLT1G FEATURE Complementary to L9014. Series We declare that the material of product compliance with RoHS requirements. S-L9014QLT1G S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. DEVICE MARKING AND ORDERING INF... See More ⇒
irfl9014pbf.pdf
PD - 95153 IRFL9014PbF HEXFET Power MOSFET l Surface Mount l Available in Tape & Reel D VDSS = -60V l Dynamic dv/dt Rating l Repetitive Avalanche Rated l P-Channel RDS(on) = 0.50 l Fast Switching G l Ease of Paralleling l Lead-Free ID = -1.8A S Descripti n Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switchin... See More ⇒
Datasheet: L9012RLT3G , L9012SLT3G , L9013PLT3G , L9013QLT3G , L9013RLT3G , L9013SLT3G , L9014QLT3G , L9014RLT3G , 2N3906 , L9014TLT3G , L9015QLT3G , L9015RLT3G , L9015SLT3G , LBC807-16LT3G , LBC807-25LT3G , LBC807-25WT3G , LBC807-40LT3G .
History: 2SA1577-P | L9012SLT3G | 2SC2950 | KTC3199-Y | RN2972HFE | CD9011D | BFQ88B
Keywords - L9014SLT3G transistor datasheet
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History: 2SA1577-P | L9012SLT3G | 2SC2950 | KTC3199-Y | RN2972HFE | CD9011D | BFQ88B
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