LBC807-40WT3G Datasheet. Specs and Replacement
Type Designator: LBC807-40WT3G
SMD Transistor Code: YL
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 250
Package: SOT-323
LBC807-40WT3G Substitution
- BJT ⓘ Cross-Reference Search
LBC807-40WT3G datasheet
lbc807-40wt1g lbc807-40wt3g.pdf ![]()
LBC807-40WT1G S-LBC807-40WT1G PNP Silicon General Purpose Transistors 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC70(SOT-323) qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION Devic... See More ⇒
LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. LBC807-40WT1G DEVICE MARKING AND ORDERING INFORMATION S-LBC807-40WT1G Device Marking Package Shipping LBC807-40WT1G YL SOT-323 3000/Tape&Reel S-... See More ⇒
LESHAN RADIO COMPANY, LTD. LBC807-16DMT1G LBC807-25DMT1G Dual General Purpose Transistors LBC807-40DMT1G PNP Duals S-LBC807-16DMT1G We declare that the material of product compliance with RoHS requirements. S-LBC807-25 DMT1G S- Prefix for Automotive and Other Applications Requiring Unique Site S-LBC807-40DMT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capab... See More ⇒
lbc807-16lt1g lbc807-25lt1g lbc807-40lt1g.pdf ![]()
LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC807-16LT1G FEATURE LBC807-25LT1G LBC807-40LT1G Collector current capability IC = -500 mA. Collector-emitter voltage VCEO(max) = -45 V. General purpose switching and amplification. 3 PNP complement LBC807 Series. We declare that the material of product compliance with RoHS requirements. 1 2 DEVICE MARKIN... See More ⇒
Detailed specifications: L9014TLT3G, L9015QLT3G, L9015RLT3G, L9015SLT3G, LBC807-16LT3G, LBC807-25LT3G, LBC807-25WT3G, LBC807-40LT3G, BC327, LBC817-16DPMT3G, LBC817-25DPMT3G, LBC817-40DPMT3G, LBC817-40WT3G, LBC846ADW1T3G, LBC846ALT3G, LBC846AWT3G, LBC846BDW1T3G
Keywords - LBC807-40WT3G pdf specs
LBC807-40WT3G cross reference
LBC807-40WT3G equivalent finder
LBC807-40WT3G pdf lookup
LBC807-40WT3G substitution
LBC807-40WT3G replacement
History: 2N6013 | BC109P | BD264B
🌐 : EN ES РУ
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P
Popular searches
bd140 transistor | 2n2222a datasheet | bd136 | tl431 datasheet | 2sd526 | 2n4403 transistor equivalent | 2sc1318 | 2n3055 transistor equivalent






