LBC817-40DPMT3G Datasheet, Equivalent, Cross Reference Search
Type Designator: LBC817-40DPMT3G
SMD Transistor Code: 56C
Material of Transistor: Si
Polarity: NPN*PNP
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 250
Noise Figure, dB: -
Package: SOT-23-6
LBC817-40DPMT3G Transistor Equivalent Substitute - Cross-Reference Search
LBC817-40DPMT3G Datasheet (PDF)
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LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsLBC817-16DPMT1GLBC817-25DPMT1GNPN/PNP DualsLBC817-40DPMT1G We declare that the material of product compliance with RoHS requirements.S-LBC817-16DPMT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LBC817-25DPMT1GS-LBC
lbc817-16dpmt1g lbc817-25dpmt1g lbc817-40dpmt1g.pdf
LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsLBC817-16DPMT1GLBC817-25DPMT1GNPN/PNP DualsLBC817-40DPMT1G We declare that the material of product compliance with RoHS requirements.S-LBC817-16DPMT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LBC817-25DPMT1GS-LBC
lbc817-40dpmt1g.pdf
LESHAN RADIO COMPANY, LTD.LBC817-16DPMT1GLBC817-25DPMT1GDual General Purpose TransistorsLBC817-40DPMT1GNPN/PNP DualsS-LBC817-16DPMT1G We declare that the material of product compliance with RoHS requirements.S-LBC817-25DPMT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LBC
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .