LBC817-40WT3G Datasheet and Replacement
Type Designator: LBC817-40WT3G
SMD Transistor Code: YM
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 250
Noise Figure, dB: -
Package: SOT-323
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LBC817-40WT3G Datasheet (PDF)
lbc817-40wt1g lbc817-40wt3g.pdf

LBC817-40WT1GS-LBC817-40WT1GNPN Silicon General Purpose Transistors1. FEATURES We declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC70(SOT-323) qualified and PPAP capable.2. DEVICE MARKING AND ORDERING INFORMATIONDevic
lbc817-40wt1g.pdf

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon We declare that the material of product compliance with RoHS requirements.LBC817-40WT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LBC817-40WT1G3MAXIMUM RATINGSRating Symbol Value Unit12CollectorEmit
lbc817-40dmt1g.pdf

LESHAN RADIO COMPANY, LTD.LBC817-16DMT1GLBC817-25DMT1GDual General Purpose TransistorsLBC817-40DMT1GNPN DualsS-LBC817-16DMT1G We declare that the material of product compliance with RoHS requirements.S-LBC817-25DMT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LBC817-40DM
lbc817-16dpmt1g lbc817-25dpmt1g lbc817-40dpmt1g.pdf

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsLBC817-16DPMT1GLBC817-25DPMT1GNPN/PNP DualsLBC817-40DPMT1G We declare that the material of product compliance with RoHS requirements.S-LBC817-16DPMT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LBC817-25DPMT1GS-LBC
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
History: LBTN180Y3T1G | LDTA114TET1G | 2DD1766Q | FTC1815 | LBC857ATT1G | 1DI200K-055 | KT805AM
Keywords - LBC817-40WT3G transistor datasheet
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History: LBTN180Y3T1G | LDTA114TET1G | 2DD1766Q | FTC1815 | LBC857ATT1G | 1DI200K-055 | KT805AM



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