All Transistors. LBC847ALT3G Datasheet

 

LBC847ALT3G Datasheet and Replacement


   Type Designator: LBC847ALT3G
   SMD Transistor Code: 1E
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 4.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 110
   Noise Figure, dB: -
   Package: SOT23
 

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LBC847ALT3G Datasheet (PDF)

 ..1. Size:404K  lrc
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LBC847ALT3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1 LBC846ALT1GS-LBC846ALT1G ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Chang

 ..2. Size:402K  lrc
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LBC847ALT3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1 LBC846ALT1GS-LBC846ALT1G ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 3and Control C

 5.1. Size:333K  lrc
lbc847alt1g.pdf pdf_icon

LBC847ALT3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1LBC846ALT1G ESD Rating Human Body Model: >4000 V SeriesESD Rating Machine Model: >400 V We declare that the material of product compliance with RoHSS-LBC846ALT1Grequirements. Series S- Prefix for Automotive and Other Applications Requiring UniqueSite and Co

 5.2. Size:402K  lrc
lbc846alt1g lbc846blt1g lbc847alt1g lbc847blt1g lbc847clt1g lbc848alt1g lbc848blt1g lbc848clt1g lbc849blt1g lbc849clt1g lbc850blt1g lbc850clt1g.pdf pdf_icon

LBC847ALT3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1LBC846ALT1G ESD Rating Human Body Model: >4000 VS-LBC846ALT1GESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Chan

Datasheet: LBC817-40DPMT3G , LBC817-40WT3G , LBC846ADW1T3G , LBC846ALT3G , LBC846AWT3G , LBC846BDW1T3G , LBC846BLT3G , LBC846BPDW1T3G , 2SC1815 , LBC847BDW1T3G , LBC847BLT3G , LBC847BN3T5G , LBC847BPDW1T3G , LBC847CDW1T3G , LBC847CLT3G , LBC847CPDW1T3G , LBC847CTT1G .

History: LBC847BPDW1T3G | 3DD13001B | MJE13004P1

Keywords - LBC847ALT3G transistor datasheet

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