2SA12 Datasheet, Equivalent, Cross Reference Search

2SA1200 TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) 2SA1200 High Voltage Switching Applications Unit: mm High voltage: VCEO = -150 V High transition frequency: f = 120 MHz (typ.) T Small flat package P = 1 to 2 W (mounted on ceramic substrate) C Complementary to 2SC2880 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating

2SA1201 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1201 Voltage Amplifier Applications Unit: mm Power Amplifier Applications High voltage: VCEO = -120 V High transition frequency: f = 120 MHz (typ.) T Small flat package PC = 1 to 2 W (mounted on ceramic substrate) Complementary to 2SC2881 Maximum Ratings (Ta = 25C) Characteri

2SA1202 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1202 Power Amplifier Applications Unit: mm Voltage Amplifier Applications Suitable for driver of 30 to 35 watts audio amplifier Small flat package P = 1.0 to 2.0 W (mounted on ceramic substrate) C Complementary to 2SC2882 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit

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2SA1203 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1203 Audio Frequency Amplifier Applications Unit: mm Suitable for output stage of 3 watts amplifier Small flat package P = 1.0 to 2.0 W (mounted on ceramic substrate) C Complementary to 2SC2883 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO

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2SA1213 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Amplifier Applications Unit: mmPower Switching Applications Low saturation voltage: VCE (sat) = -0.5 V (max) (IC = -1 A) High speed switching time: tstg = 1.0 s (typ.) Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SC2873 Absolut

2SA1255 TOSHIBA Transistor Silicon PNP Triple Diffused (PCT process) 2SA1255 High Voltage Switching Applications Unit: mm High voltage: VCBO = -200 V (min) V = -200 V (min) CEO Small package Complementary to 2SC3138 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO -200 VCollector-emitter voltage VCEO -200 V

2SA1242 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1242 Strobe Flash Applications Unit: mm Medium Power Amplifier Applications Excellent hFE linearity : h = 100 to 320 (V = -2 V, I = -0.5 A) FE (1) CE C: h = 70 (min) (V = -2 V, I = -4 A) FE (2) CE C Low collector saturation voltage : V = -1.0 V (max) (I = -4 A, I = -0.1 A) CE (sat) C B

2SA1298 TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) 2SA1298 Low Frequency Power Amplifier Application Unit: mm Power Switching Applications High DC current gain: hFE = 100~320 Low saturation voltage: V = -0.4 V (max) CE (sat)(I = -500 mA, I = -20 mA) C B Suitable for driver stage of small motor Complementary to 2SC3265 Small package Max

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2SA1245 TOSHIBA Transistor Silicon PNP Epitaxial Planar Type 2SA1245 High Frequency Amplifier and Switching Applications Unit: mm VHF~UHF Band Low Noise Amplifier Applications Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO -15 VCollector-emitter voltage VCEO -8 VEmitter-base voltage VEBO -2 VCollector current IC -30 mA

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2SA1204 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1204 Audio Frequency Amplifier Applications Unit: mm High DC current gain: hFE = 100 to 320 Suitable for output stage of 1 watts amplifier Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SC2884 Maximum Ratings (Ta = 25C) Characteristics Symbol

2SA1225 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1225 Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications High transition frequency: fT = 100 MHz (typ.) Complementary to 2SC2983 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -160 VCollector-emitter voltage VCEO -160 VEmitter-

2SA1296 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1296 Power Amplifier Applications Unit: mm Power Switching Applications Low saturation voltage: VCE (sat) = -0.5 V (max) @I = -2 A C Complementary to 2SC3266. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO -20 VCollector-emitter voltage VCEO

2SA1244 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1244 High Current Switching Applications Unit: mm Low collector saturation voltage: VCE (sat) = -0.4 V (max) (I = -3 A) C High speed switching time: t = 1.0 s (typ.) stg Complementary to 2SC3074 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -60

2SA1213 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Amplifier Applications Unit: mm Power Switching Applications Low saturation voltage: VCE (sat) = -0.5 V (max) (IC = -1 A) High speed switching time: t = 1.0 s (typ.) stg Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SC2873 Max

2SA1297 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1297 Power Amplifier Applications Unit: mm Power Switching Applications Low saturation voltage: VCE (sat) = -0.5 V (max) @I = -2 A C Complementary to 2SC3267. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO -20 VCollector-emitter voltage VCEO

2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1241 Power Amplifier Applications Unit: mm Power Switching Applications Low Collector saturation voltage: VCE (sat) = -0.5 V (max) (I = -1 A) C Excellent switching time: t = 1.0 s (typ.) stg Complementary to 2SC3076 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollecto

2SA1298 TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) 2SA1298 Low Frequency Power Amplifier Application Unit: mmPower Switching Applications High DC current gain: hFE = 100 to 320 Low saturation voltage: VCE (sat) = -0.4 V (max) (IC = -500 mA, IB = -20 mA) Suitable for driver stage of small motor Complementary to 2SC3265 Small package Absolu

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Ordering number:ENN1201DPNP/NPN Epitaxial Planar Silicon Transistors2SA1291/2SC325560V/10A High-Speed Switching ApplicationsApplications Package Dimensions Various inductance lamp drivers for electricalunit:mmequipment.2010C Inverters, converters (strobo, flash, fluorescent lamp[2SA1291/2SC3255]lighting circuit).10.24.5 Power amp (high power car stereo, moto

Ordering number:ENN1032BPNP/NPN Epitaxial Planar Silicon Transistors2SA1248/2SC3116160V/700mA Switching ApplicationsUses Package Dimensions Color TV sound output, converters, inverters.unit:mm2009BFeatures[2SA1248/2SC3116] High breakdown voltage. 8.02.74.0 Large current capacity. Using MBIT process3.01.60.80.80.60.51 : Emitter1 2 32 : Co

Ordering number:EN1056CPNP Epitaxial Planar Silicon Transistors2SA1256High Frequency Amp ApplicationsApplications Package Dimensions Ideally suited for use in FM RF amplifiers, mixers,unit:mmoscillators, converters, and IF amplifiers.2018B[2SA1256]Features High fT (230MHz typ), and small Cre (1.1pF typ). Small NF (2.5dB typ).1 : Base2 : Emitter3 : Collecto

Ordering number:ENN1200DPNP/NPN Epitaxial Planar Silicon Transistors2SA1290/2SC325460V/7A High-Speed Switching ApplicationsApplications Package Dimensions Various inductance lamp drivers for electricalunit:mmequipment.2010C Inverters, converters (strobo, flash, fluorescent lamp[2SA1290/2SC3254]lighting circuit).10.24.53.65.1 Power amp (high power car ste

Ordering number:ENN1060CPNP/NPN Epitaxial Planar Silicon Transistors2SA1249/2SC3117160V/1.5A Switching ApplicationsUses Package Dimensions Color TV sound output, converters, inverters. unit:mm2009BFeatures [2SA1249/2SC3117]8.0 High breakdown voltage.2.74.0 Large current capacity. Adoption of MBIT process.3.01.60.80.80.60.51 : Emitter1 2 32

Ordering number:ENN1049EPNP/NPN Epitaxial Planar Silicon Transistors2SA1253/2SC3135High-hFE, AF Amp ApplicationsFeatures Package Dimensions High VEBO.unit:mm Wide ASO and high durability against breakdown.2033A[2SA1253/2SC3135]2.24.00.40.50.40.41 2 31.3 1.31 : Emitter2 : Collector( ) : 2SA1253 3 : Base3.03.8SANYO : SPASpecificationsAbsolut

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Ordering number:ENN1057CPNP/NPN Epitaxial Planar Silicon Transistors2SA1257/2SC3143High-Voltage Switching, AF Power Amp,100W Output Predriver ApplicationsFeatures Package Dimensions Very small-sized package permitting the 2SA1257/unit:mm2SC3143-applied sets to be made small and slim.2018B High breakdown voltage (VCEO 160V).[2SA1257/2SC3143] Small output capac

Ordering number:ENN779DPNP/NPN Epitaxial Planar Silicon Transistors2SA1209/2SC2911160V/140mA High-Voltage Switchingand AF 100W Predriver ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm High breakdown voltage.2009B Good linearity of hFE and small Cob.[2SA1209/2SC2911] Fast switching speed.8.02.74.03.01.60.80.80.60.5

Ordering number:EN779CPNP/NPN Epitaxial Planar Silicon Transistors2SA1209/2SC2911160V/140mA High-Voltage Switchingand AF 100W Predriver ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm High breakdown voltage.2009A Good linearity of hFE and small Cob.[2SA1209/2SC2911] Fast switching speed.Switching Test CircuitIC=10IB1=10IB2=10mA

Ordering number:ENN778FPNP/NPN Epitaxial Planar Silicon Transistors2SA1207/2SC2909High-Voltage SwitchingAF 60W Predriver ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm High breakdown voltage.2003B Excellent linearity of hFE and small Cob.[2SA1207/2SC2909] Fast switching speed.5.04.04.00.450.50.440.451 2 31 : Emitter

Ordering number:ENN1048CPNP/NPN Epitaxial Planar Silicon Transistors2SA1252/2SC3134High VEBO, AF Amp ApplicationsFeatures Package Dimensions High VEBO.unit:mm Wide ASO and high durability against breakdown.2018B[2SA1252/2SC3134]0.40.1630 to 0.11 0.95 0.95 21.92.91 : Base2 : Emitter( ) : 2SA1252 3 : CollectorSANYO : CPSpecificationsAbsolute Maxim

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Ordering number:ENN781GPNP/NPN Epitaxial Planar Silicon Transistors2SA1208/2SC2910High-Voltage SwitchingAudio 80W Output Predriver ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm High breakdown voltage.2006B Excellent linearity of hFE and small Cob.[2SA1208/2SC2910] Fast swtching speed.6.05.0 4.70.50.60.5 0.51 2 31 : Emi

Ordering number:ENN2370APNP/NPN Epitaxial Planar Silicon Transistors2SA1292/2SC325660V/15A High-Speed Switching ApplicationsApplications Package Dimensions Various inductance, lamp drivers for electricalunit:mmequipment.2022A Inverters, converters (strobo, flash, fluorescent lamp[2SA1292/2SC3256]lighting circuit).15.63.2 Power amp (high-power care stereo, mo

Ordering number:ENN1047CPNP/NPN Epitaxial Planar Silicon Transistors2SA1246/2SC3114High-VEBO, AF Amp ApplicationsFeatures Package Dimensions High VEBO.unit:mm Wide ASO and highly resistant to breakdown.2003B[2SA1246/2SC3114]5.04.04.00.450.50.440.451 2 31 : Emitter2 : Collector( ) : 2SA1246 3 : Base1.3 1.3 SANYO : NPSpecificationsAbsolute Maxim

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Ordering number:ENN1059DPNP/NPN Epitaxial Planar Silicon Darlington Transistors2SA1259/2SC314560V/5A for High-Speed Drivers ApplicationsFeatures Package Dimensions High fT.unit:mm High switching speed.2010C Wide ASO.[2SA1259/2SC3145]10.24.53.65.11.31.20.80.41 : Base1 2 32 : Collector ( ) : 2SA12593 : Emitter2.55 2.55SANYO : TO-220ABSp

Ordering number:ENN1199DPNP/NPN Epitaxial Planar Silicon Transistors2SA1289/2SC325360V/5A High-Speed Switching ApplicationsApplications Package Dimensions Various inductance lamp drivers for electricalunit:mmequipment.2010C Inverters, converters (strobo, flash, fluorescent lamp[2SA1289/2SC3253]lighting circuit).10.24.53.65.1 Power amp (high power car ste

Ordering number:ENN1058DPNP/NPN Epitaxial Planar Silicon Darlington Transistors2SA1258/2SC314460V/3A for High-Speed Drivers ApplicationsFeatures Package Dimensions High fT.unit:mm High switching speed.2010C Wide ASO.[2SA1258/2SC3144]10.24.53.65.11.31.20.80.41 : Base1 2 32 : Collector( ) : 2SA12583 : Emitter2.55 2.55SANYO : TO-220ABSpe

Ordering number:EN778EPNP/NPN Epitaxial Planar Silicon Transistors2SA1207/2SC2909High-Voltage SwitchingAF 60W Predriver ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm High breakdown voltage.2003A Excellent linearity of hFE and small Cob.[2SA1207/2SC2909] Fast switching speed.JEDEC:TO-92 B:Base( ) : 2SA1207EIAJ:SC-43 C:Collector

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DATA SHEETSILICON TRANSISTORS2SA1221, 1222PNP SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERSFEATURES PACKAGE DRAWING (UNIT: mm) Ideal for use of high withstanding voltage current such as TVvertical deflection output, audio output, and variable powersupplies. Complementary transistor with 2SC2958 and 2SC2959VCEO = 140 V: 2SA1221/2SC2958VCEO = 160 V: 2S

MCC2SA1298-OTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1298-YPhone: (818) 701-4933Fax: (818) 701-4939Features Power switching application Low frequency power amplifier application PNP General Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Purpose Amplifier Lead Free Fin

MCC2SA1298-OTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1298-YPhone: (818) 701-4933Fax: (818) 701-4939Features Power switching application Low frequency power amplifier application PNP General Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Purpose Amplifier Lead Free Fin

MCC2SA1201-OMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311 2SA1201-YPhone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)PNP Silicon Power amplifier applications Power Transistors Epoxy meets UL 94 V-0 flammability

2SA1213-O/2SA1213-YElectrical Characteristics @ 25C Unless Otherwise SpecifiedParameter Symbol Min Typ Max Units ConditionsV(BR)CBO -50IC=-100A, IE=0Collector-Base Breakdown Voltage VV(BR)CEO -50IC=-10mA, IB=0Collector-Emitter Breakdown Voltag VV(BR)EBO -5IE=-100A, IC=0Emitter-Base Breakdown Voltage VICBO VCB=-50V, IE=0Collector-Base Cutoff Current -0.1 AIEB

2SA1213-OMCCTMMicro Commercial ComponentsMicro Commercial Components 20736 Marilla Street Chatsworth2SA1213-YCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP SiliconRoHS Compliant. See ordering information) Low Saturation voltage: VCE(sat)=0.5V(max.)(IC=1.0A) Epitaxial Transistors Small

2SA1298Features Power Switching Application Low Frequency Power Amplifier Application Halogen Free. Green Device (Note 1)PNP General Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingPurpose Amplifier Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings @ 25C Unless

2SA1213-OMCCTMMicro Commercial ComponentsMicro Commercial Components 20736 Marilla Street Chatsworth2SA1213-YCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP SiliconRoHS Compliant. See ordering information) Low Saturation voltage: VCE(sat)=0.5V(max.)(IC=1.0A) Epitaxial Transistors Small

MCC2SA1201-OMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311 2SA1201-YPhone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)PNP Silicon Power amplifier applications Power Transistors Epoxy meets UL 94 V-0 flammability

Transistor2SA1254Silicon PNP epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SC22066.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9High transition frequency fT.Low collector to emitter saturation voltage VCE(sat).M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.85A

Transistor2SA1254Silicon PNP epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SC22066.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9High transition frequency fT.Low collector to emitter saturation voltage VCE(sat).M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.85A

UNISONIC TECHNOLOGIES CO., LTD 2SA1201 Preliminary PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SA1201 is designed for power amplifier and voltage amplifier applications. FEATURES *High voltage: VCEO= -120V *High transition frequency: fT=120MHz(typ.) *Pc=1 to 2 W(mounted on ceramic substrate) ORDERING INFORMATION Ordering Numb

2SA1201PNP Silicon Elektronische BauelementeEpitaxial Planar TransistorRoHS Compliant ProductSOT-89FEATURES E C B High voltage High transition frequency Complementary to 2SC2881 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter ValueUnitsVCBO -120 Collector-Base Voltage V VCEO -120 Collector-Emitter Voltage V Millimeter Millimeter REF.

2SA1235A -0.2A , -60V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES Low Collector Current A Low Collector Power Dissipation L33Top View C BCLASSIFICATION OF hFE (1) 11 22Product-Rank 2SA1235A-ME 2SA1235A-MF K ERange 150~300 250~500DMa

2SA1298 -0.8A , -35V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES Low Frequency Power Amplifier Application A Power Switching Applications L33Top View C BCLASSIFICATION OF hFE (1) 11 2Product-Rank 2SA1298-O 2SA1298-Y 2K ERange 100~20

2SA1296 -2 A, -20 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Low Saturation VoltageVCE(sat) High DC Current Gain G HEmitter Collector Base JCLASSIFICATION OF hFE(1) A DProduct-Rank 2SA1296-Y 2SA1296-GR MillimeterREF.B Min. Max.

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

http://www.idc-com.co.jp 854-0065 6-41

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

DONG GUAN SHI HUA YUAN ELECTRON CO.,LTD. TEL 86-769-5335378 86-769-5305266 FEX 86-769-5316189 SOT-23 Plastic-Encapsulate Transistors SOT23 1. BASE 2SA1235A TRANSISTOR PNP 2. EMITTER 3. COLLECTOR FEATURES Power dissipation 2.4 PCM : 0.2 WTamb=25 1.3 Collector current ICM: -0.2 A Collector-base voltage V

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1201 TRANSISTOR (PNP) 1. BASE FEATURES High voltage 2. COLLECTOR High transition frequency Complementary to 2SC2881 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter ValueUnitVCBO -120 Collector-Base Voltage V VCEO -120

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1203 TRANSISTOR (PNP) 1. BASE FEATURES 2. COLLECTOR Complementary to 2SC2883 Small Flat Package3. EMITTER Audio Frequency Amplifier Application MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -30 V VC

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors2SA1235A TRANSISTOR (PNP)SOT23 FEATURES Low Collector Current Low Collector Power DissipationMAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASESymbol Parameter Value Unit 2. EMITTERV Collector-Base Voltage -60 V CBO3. COLLECTORV Collector-Emitter Voltage -50 V C

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1204 TRANSISTOR (PNP) 1. BASE FEATURES 2. COLLECTOR Complementary to 2SC2884 Small Flat Package3. EMITTER Audio Frequency Amplifier Application High DC Current Gain MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collecto

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors2SA1225 TRANSISTOR (PNP)TO-252-2L FEATURES 1. BASE High Transition Frequency Complementary to 2SC29832. COLLECTOR 3 .EMITTER APPLICATIONS Power Amplifier Applications Driver Stage Amplifier Applications Equivalent Circuit A1225=Device code A1225Solid dot=Gre

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1213 TRANSISTOR (PNP) 1. BASE FEATURES 2. COLLECTOR Complementary to 2SC2873 Small Flat Package3. EMITTER Power Amplifier and Switching Applications Low Saturation Voltage High Speed Switching Time MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbo

JMnic Product Specification Silicon PNP Power Transistors 2SA1291 DESCRIPTION With TO-220 package Low collector saturation voltage. Short switching time. Complement to type 2SC3255 APPLICATIONS Various inductance lamp drivers for electrical equipment. Inverters, converters Power amplifier High-speed switching PINNING PIN DESCRIPTION1 Emitter Colle

JMnic Product Specification Silicon PNP Power Transistors 2SA1250 DESCRIPTION With TO-66 package Excellent safe operating area High breadown voltage APPLICATIONS For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol3 CollectorAbsolute maximum ratings(Ta=)

JMnic Product Specification Silicon PNP Power Transistors 2SA1261 DESCRIPTION With TO-220 package High switching speed Low collector saturation voltage Complement to type 2SC3157 APPLICATIONS For high voltage ,high speed and power switching applications PINNING PIN DESCRIPTION1 Emitter 2 CollectorFig.1 simplified outline (TO-220) and symbol3 BaseAbsolu

JMnic Product Specification Silicon PNP Power Transistors 2SA1215 DESCRIPTION With MT-200 package Complement to type 2SC2921 APPLICATIONS Audio and general purpose PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIO

JMnic Product Specification Silicon PNP Power Transistors 2SA1290 DESCRIPTION With TO-220 package Short switching time Low collector saturation voltage Complement to type 2SC3254 APPLICATIONS Various inductance lamp drivers for electrical equipment Inverters,converters Power amplifier Switching regulator ,driver PINNING PIN DESCRIPTION1 Emitter Co

JMnic Product Specification Silicon PNP Power Transistors 2SA1262 DESCRIPTION With TO-220 package Complement to type 2SC3179 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 Base Fig.1 simplified outline (TO-220) and symbolAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT

JMnic Product SpecificationSilicon PNP Power Transistors 2SA1217 DESCRIPTION With TO-126 package Complement to type 2SC2877 Good linearity of hFE APPLICATIONS Audio frequency power amplifier Low speed switching Suitable for output stage of 5 watts car radio and car stereo PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 Ba

JMnic Product Specification Silicon PNP Power Transistors 2SA1232 DESCRIPTION With TO-3PFa package Complement to type 2SC3012 APPLICATIONS Audio frequency power amplifier. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitt

JMnic Product Specification Silicon PNP Power Transistors 2SA1249 DESCRIPTION With TO-126 package Complement to type 2SC3117 High breakdown voltage Large current capacity APPLICATIONS For color TV sound output,converters, Inverters applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=2

JMnic Product Specification Silicon PNP Power Transistors 2SA1205 DESCRIPTION With TO-3PN package High power dissipation APPLICATIONS For general purpose applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UN

JMnic Product Specification Silicon PNP Power Transistors 2SA1294 DESCRIPTION With TO-3PN package Complement to type 2SC3263 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNIT

JMnic Product Specification Silicon PNP Power Transistors 2SA1263N DESCRIPTION With TO-3P(I) package Complement to type 2SC3180N 2SA1263 with short pin APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol 3 BaseAbsolute maximum ratings(Ta=25) S

JMnic Product Specification Silicon PNP Power Transistors 2SA1209 DESCRIPTION With TO-126 package Complement to type 2SC2911 High breakdown voltage Fast switching speed APPLICATIONS High-voltage switching and AF 100W predriver applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25)

JMnic Product Specification Silicon PNP Power Transistors 2SA1227 2SA1227A DESCRIPTION With TO-3PFa package Complement to type 2SC2987/2987A High power dissipation APPLICATIONS For use in audio frequency power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT

JMnic Product Specification Silicon PNP Power Transistors 2SA1280 DESCRIPTION With TO-220F package High breakdown voltage High power dissipation APPLICATIONS For use in low frequency power amplifier Color TV vertical deflection output PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings (Ta=

JMnic Product Specification Silicon PNP Power Transistors 2SA1293 DESCRIPTION With TO-220 package Complement to type 2SC3258 Low collector saturation voltage High speed switching time APPLICATIONS High current switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Bas

JMnic Product Specification Silicon PNP Power Transistors 2SA1265N DESCRIPTION With TO-3P(I) package Complement to type 2SC3182 2SA1265 with short pin APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol 3 BaseAbsolute maximum ratings(Ta=25) SY

JMnic Product Specification Silicon PNP Power Transistors 2SA1292 DESCRIPTION With TO-3PN package Low saturation voltage. Fast switching time. Complement to type 2SC3256 APPLICATIONS Various inductance, lamp drivers for electrical equipment. Inverters, converters Power amplifier High-speed switching PINNING PIN DESCRIPTION1 Base Collector;connecte

JMnic Product Specification Silicon PNP Power Transistors 2SA1295 DESCRIPTION With MT-200 package Complement to type 2SC3264 APPLICATIONS Audio and general purpose applications PINNING (see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAM

JMnic Product Specification Silicon PNP Power Transistors 2SA1279 DESCRIPTION With TO-220F package Low collector saturation voltage APPLICATIONS High current switching applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collec

JMnic Product Specification Silicon PNP Power Transistors 2SA1216 DESCRIPTION With MT-200 package Complement to type 2SC2922 APPLICATIONS Audio and general purpose PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIO

JMnic Product Specification Silicon PNP Power Transistors 2SA1220 2SA1220A DESCRIPTION With TO-126 package Complement to type 2SC2690/2690A APPLICATIONS Audio frequency power amplifier High frequency power amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITION

JMnic Product Specification Silicon PNP Power Transistors 2SA1289 DESCRIPTION With TO-220 package Complement to type 2SC3253 Low saturation voltage Short switching time APPLICATIONS Various inductance lamp drivers for electrical equipment Inverters;converters Power amplification Switching regulator ,driver PINNING PIN DESCRIPTION1 Emitter Collecto

JMnic Product Specification Silicon PNP Power Transistors 2SA1276 DESCRIPTION With TO-220 package Complement to type 2SC3230 Good linearity of hFE APPLICATIONS General purpose applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL P

JMnic Product Specification Silicon PNP Power Transistors 2SA1288 DESCRIPTION With TO-220 package Low collector saturation voltage Short switching time APPLICATIONS Various inductance lamp drivers for electrical equipment Inverters;converters Power amplification Switching regulator ,driver PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2

JMnic Product Specification Silicon PNP Power Transistors 2SA1264N DESCRIPTION With TO-3P(I) package Complement to type 2SC3181N 2SA1264 with short pin APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol 3 BaseAbsolute maximum ratings(Ta=25) S

LAPT 2SA1215Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2921)Application : Audio and General PurposeExternal Dimensions MT-200 Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Unit Symbol Conditions Ratings Unit0.26.00.336.4VCBO 160 V ICBO VCB=160V 100max A0.224.42.1VCEO 160 V IEBO VEB=

2SA1262Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3179)Application : Audio and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-25(TO220)Unit SymbolSymbol 2SA1262 Conditions 2SA1262 Unit0.24.80.210.2VCBO V ICBO VCB=60V 100max A60 2.00.1VCEO V IEBO VEB=6V 100max

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LAPT 2SA1294Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3263)Application : Audio and General Purpose(Ta=25C) Absolute maximum ratings (Ta=25C) Electrical Characteristics External Dimensions MT-100(TO3P)Symbol Ratings Unit Symbol Conditions Ratings Unit0.24.80.415.60.1VCBO 230 V ICBO VCB=230V 100max A 9.6 2.0VCEO 230 V IEBO VEB=

LAPT 2SA1295Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3264)Application : Audio and General(Ta=25C) Absolute maximum ratings (Ta=25C) Electrical Characteristics External Dimensions MT-200Symbol Ratings Unit Symbol Conditions Ratings Unit0.26.00.336.4VCBO 230 V ICBO VCB=230V 100max A0.224.42.1VCEO V IEBO VEB=5V 100max

LAPT 2SA1216Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2922)Application : Audio and General Purpose Electrical Characteristics (Ta=25C) External Dimensions MT-200 Absolute maximum ratings (Ta=25C)Symbol Ratings Unit SymboI Conditions Ratings Unit0.26.00.336.4VCBO 180 V VCBO VCB=180V 100max A0.224.42.10.1VCEO 180 V IEBO

2SA1 201SOT-89 TRANSISTOR(PNP)1. BASE FEATURES High voltage 2. COLLECTOR 1 High transition frequency 2 Complementary to 2SC2881 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter ValueUnitsVCBO -120 Collector-Base Voltage V VCEO -120 Collector-Emitter Voltage V VEBO -5 Emitter-Base Voltage V IC Collector Current -Co

2SA1 203SOT-89-3L TRANSISTOR(PNP)1. BASE FEATURES 2. COLLECTOR Complementary to 2SC2883 Small Flat Package3. EMITTER Audio Frequency Amplifier Application MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -1.5 A

2SA1 235ATRANSISTOR(PNP)SOT23 FEATURES Low Collector Current Low Collector Power Dissipation MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER VCBO Collector-Base Voltage -60 V 3. COLLECTOR V Collector-Emitter Voltage -50 V CEOV Emitter-Base Voltage -6 V EBOI Collector Current -200 mA CP Collector Powe

2SA1 298TRANSISTOR(PNP)SOT23 FEATURES Low Frequency Power Amplifier Application Power Swithing Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage -35 V CBO3. COLLECTOR V Collector-Emitter Voltage -30 V CEOV Emitter-Base Voltage -5 V EBOI Collector Current -800 mA C

2SA1 204SOT-89-3L TRANSISTOR(PNP) 1. BASE FEATURES 2. COLLECTOR Complementary to 2SC2884 Small Flat Package3. EMITTER Audio Frequency Amplifier Application High DC Current Gain MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC

2SA1 21 3TRANSISTOR(PNP) SOT-89-3L 1. BASE FEATURES 2. COLLECTOR Complementary to 2SC2873 Small Flat Package3. EMITTER Power Amplifier and Switching Applications Low Saturation Voltage High Speed Switching Time MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V

2SA1242(PNP)TO-251/TO-252-2L TransistorTO-2511. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features Strobe Flash Applications Medium Power Amplifier Applications Excellent hFE linearity : hFE (1) = 100 to 320 (VCE = -2 V, IC = -0.5 A) : hFE (2) = 70 (min) (VCE = -2 V, IC = -4 A) TO-252-2L Low collector saturation voltage : VCE (sat) = -1.0 V (max) (IC = -4 A, IB = -0.1

2SA1201SOT-89 Transistor(PNP)1. BASE SOT-892. COLLECTOR 1 4.6B4.41.6 1.82 1.41.43. EMITTER 3 2.64.25Features 2.43.75 0.8 High voltage MIN0.53 High transition frequency 0.400.480.442x)0.13 B0.35 0.371.5 Complementary to 2SC2881 3.0MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol P

FM120-M WILLASTHRU2SA1201SOT-89 Plastic-Encapsulate TransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverSOD-123HTRANSISTOR se leakage current and thermal resistance.(PNP) Low profile surface mounted applica

2SA1213-89 Plastic-Encapsulate TransistorsSOTTRANSISTOR (PNP) SOT-89 FEATURES Small Flat Package1. BASE Power Amplifier and Switching Applications 2. COLLECTOR Low Saturation Voltage High Speed Switching Time3. EMITTER Pb-Free package is available RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" MAXIMUM RATINGS (T

ST 2SA1213U PNP Silicon Epitaxial Planar Transistor for power amplifier and power switching applications The transistor is subdivided into two groups, O and Y, according to its DC current gain. Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 50 VCollector Emitter Voltage -VCEO 50 VEmitter Base Voltage -VEBO 5 VCollector C

LESHAN RADIO COMPANY, LTD.General Purpose TransistorDESCRIPTION L2SA1365FLT1G is a mini package silicon PNP epitaxial transistor, L2SA1235FLT1Git is designed for low frequency voltage application.S-L2SA1235FLT1G . FEATURE Small collector to emitter saturation voltage. VCE(sat)=-0.3V max ( @I c=-100mA, I B=-10mA)3Excellent linearity of DC forward current gain.

SMD Type TransistorsPNP Transistors2SA1200Features1.70 0.1High Voltage : VCEO = -150VHigh Transition Frequency : fT = 120MHz(typ.)Small Flat PackageComplementary to 2SC28800.42 0.10.46 0.11.Base2.Collector3.EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Emitter Voltage VCEO -150 VCollector-Base Voltage VCBO -150 VEmitter-Base Vol

SMD Type orSMD Type TransistICsPNP Transistors2SA1256SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13FeaturesHigh fT (230MHz typ), and small Cre (1.1pF typ).1 2Small NF (2.5dB typ).+0.10.95-0.1 0.1+0.05-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -30 VCollector-emitter

SMD Type TransistorsPNP Transistors2SA12011.70 0.1 Features High voltage High transition frequency Complementary to 2SC28810.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -120 V Emitter - Base Voltage VEBO -5 Collect

SMD Type TransistorsPNP Transistors 2SA12021.70 0.1FeaturesSuitable for Driver of 30 to 35 Watts Audio AmplifierSmall Flat Package0.42 0.1PC = 1 to 2W (mounted on ceramic substrate) 0.46 0.1Complementary to 2SC28821.Base2.Collector3.EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO -80 VCollector-Emitter Voltage VCEO -

SMD Type TransistorsPNP Transistors 2SA12031.70 0.1FeaturesSuitable For Output Stage of 3 Watts AmplifierSmall Flat Package0.42 0.10.46 0.1PC = 1 to 2W (mounted on ceramic substrate)Complementary to 2SC28831.Base2.Collector3.EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO -30 VCollector-Emitter Voltage VCEO -30 V

SMD Type TransistorsPNP Transistors 2SA1257SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13FeaturesHigh breakdown voltage.Small output capacitance.1 2 Very small-sized package permitting the 2SA1257/+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.12SC3143-applied sets to be made small and slim.1.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter

SMD Type orSMD Type TransistICsPNP Transistors2SA1252SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13FeaturesHigh VEBO.1 2Wide ASO and high durability against breakdown.+0.1+0.050.95 -0.1 0.1 -0.01 Complementary to 2SC31341.9+0.1-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -60

SMD Type orSMD Type TransistICsPNP Transistors2SA1235SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13FeaturesSmall collector to emitter saturation voltage.1 2+0.1Excelent lineary DC forward current gain. +0.050.95-0.1 0.1-0.01+0.11.9-0.1Super mini package for easy mounting.1.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Un

SMD Type TransistorsPNP Transistors2SA1298SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=-0.8A1 2 Collector Emitter Voltage VCEO=-30V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1 Low Frequency Power Amplifier Application Power Swithing Applications1.Base Complementary to 2SC32652.Emitter3.collecto

SMD Type TransistorsPNP Transistors2SA1245SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=-30mA1 2 Collector Emitter Voltage VCEO=-8V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -15 Col

SMD Type TransistorsPNP Transistors 2SA12041.70 0.1FeaturesSuitable For Output Stage of 1 Watts AmplifierSmall Flat PackagePC = 1 to 2W (mounted on ceramic substrate)0.42 0.10.46 0.1Complementary to 2SC28841.Base2.Collector3.EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO -35 VCollector-Emitter Voltage VCEO -30 V

DIP Type TransistorsPNP Transistors2SA1244TO-251 Features Low collector saturation voltage1 2 3 High speed switching time: tstg = 1.0 s (typ.) Complementary to 2SC30741 321 Base2 Collector3 EmitterUnit: mm Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50

SMD Type TransistorsPNP Transistors 2SA12131.70 0.1FeaturesLow Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -1A)High Speed Switching Time: tstg = 1.0us (typ.)Small Flat Package0.42 0.10.46 0.1PC = 1 to 2W (mounted on ceramic substrate)Complementary to 2SC28731.Base2.Collector3.EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - B

SMD Type TransistorsPNP Transistors2SA1226SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=-30mA1 2 Collector Emitter Voltage VCEO=-40V+0.1+0.050.95 -0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Col

CHENMKO ENTERPRISE CO.,LTD2SA1213GPSMALL FLAT PNP Epitaxial Transistor VOLTAGE 50 Volts CURRENT 2 AmpereAPPLICATION* Power amplifier .FEATURESC-62/SOT-89* Small flat package. (SC-62/SOT-89)* Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-1A) * High speed switching time: tstg= 1.0uSec (typ.)* PC= 1.0 to 2.0W (mounted on ceramic substrate).4.6MAX. 1.6MAX.1.7MAX. 0.4

General Purpose Transistor2SA1213-G Series (PNP)RoHS DeviceFeatures1 : Base -Small flat package.2 : CollectorSOT-89-3L3 : Emitter -Power amplifier and switching -applications.0.181(4.60)0.173(4.40) -Low saturation voltage.0.061(1.55)REF. -High speed switching time.0.102(2.60) 0.167(4.25)0.091(2.30) 0.155(3.94)1 2 3Maximum Ratings (at TA=25C unless other

General Purpose Transistor2SA1213-G Series (PNP)RoHS DeviceFeatures1 : Base -Small flat package.2 : CollectorSOT-89-3L3 : Emitter -Power amplifier and switching -applications.0.181(4.60)0.173(4.40) -Low saturation voltage.0.061(1.55)REF. -High speed switching time.0.102(2.60) 0.167(4.25)0.091(2.30) 0.155(3.94)1 2 3Maximum Ratings (at TA=25C unless other

2SA1213SQ PNP TransistorFeatures SOT-89 Low Saturation Voltage High Speed Switching Time As Complementary Type of the NPNTransistor 2SC2873SQ is Recommended.Equivalent Circuit 1.Base 2.Collector 3. Emitter2.CollectorMarking Code : 2SA1213SQ-O : NX 2SA1213SQ-Y : NY1.Base3. Emitter.Absolute Maximum Ratings Ratings at 25 ambient temperature unless oth

2SA1213 SOT-89 Ty p PNP Transistors3FeaturesLow Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -1A)2High Speed Switching Time: tstg = 1.0us (typ.)1 1.BaseSmall Flat Package2.Collector3.EmitterPC = 1 to 2W (mounted on ceramic substrate) Simplified outline(SOT-89)Complementary to 2SC2873Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector -

2SA1213BIPOLAR TRANSISTOR (PNP)FEATURES Complementary to 2SC2873 Power Amplifier and Switching Application Low Saturation Voltage High Speed Switching Time Surface Mount deviceSOT-89MECHANICAL DATA Case: SOT-89 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Weight: 0.055 grams (approximate)MAXIMUM RATINGS (T = 2

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1264DESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Min) @I = -6ACE(sat) CGood Linearity of hFEComplement to Type 2SC3181APPLICATIONSPower amplifier applicationsRecommend for 55W high fidelity audio frequencyamplifier output stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1261DESCRIPTIONLow Collector Saturation Voltage-: V = -0.6V(Max.)@I = -5ACE(sat) CFast Switching SpeedComplement to Type 2SC3157APPLICATIONSDeveloped for high-voltage high-speed switching, and isideal for use as a driver in devices such as switching reg-lators, DC/DC converters, and high frequency p

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1265DESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Min) @I = -7ACE(sat) CGood Linearity of hFEComplement to Type 2SC3182APPLICATIONSPower amplifier applicationsRecommend for 70W high fidelity audio frequencyamplifier output stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1232DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -130V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC3012APPLICATIONSFor audio frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -130 VCBOV Collector-

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1290DESCRIPTIONLow Collector Saturation Voltage-: V = -0.4V(Max.)@I = -3.5ACE(sat) CFast Switching SpeedComplement to Type 2SC3254APPLICATIONSVarious inductance lamp drivers for electrical equipment.Inverters, converters(strobo, flash, fluorescent lamp lightingcircuits).Power amplifier (high p

isc Silicon PNP Power Transistor 2SA1291DESCRIPTIONLow Collector Saturation Voltage-: V = -0.4V(Max.)@I = -5ACE(sat) CFast Switching SpeedComplement to Type 2SC3255Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVarious inductance lamp drivers for electrical equipment.Inverters, converters(strobo, flash, fluorescent

isc Silicon PNP Power Transistor 2SA1250DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -200V(Min)(BR)CEOLow Collector Saturatioin Voltage-: V = -1.0V(Max.)@ I = -5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)

isc Silicon PNP Power Transistor 2SA1261DESCRIPTIONLow Collector Saturation Voltage-: V = -0.6V(Max.)@I = -5ACE(sat) CFast Switching SpeedComplement to Type 2SC3157Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDeveloped for high-voltage high-speed switching, and isideal for use as a driver in devices such as switchin

isc Silicon PNP Power Transistor 2SA1215DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -160V(Min)(BR)CEOHigh Power DissipationComplement to Type 2SC2921Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Coll

isc Silicon PNP Power Transistor 2SA1290DESCRIPTIONLow Collector Saturation Voltage-: V = -0.4V(Max.)@I = -3.5ACE(sat) CFast Switching SpeedComplement to Type 2SC3254APPLICATIONSVarious inductance lamp drivers for electrical equipment.Inverters, converters(strobo, flash, fluorescent lamp lightingcircuits).Power amplifier (high power car stereo, motor controller

isc Silicon PNP Power Transistor 2SA1262DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min.)(BR)CEOLow Collector Saturation Voltage: V = -0.6V(Max.)@I = -2ACE(sat) CComplement to Type 2SC3179Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIM

isc Silicon PNP Power Transistor 2SA1261-ZDESCRIPTIONHigh switching speedLow Collector-Emitter Saturation Voltage-: VCE(sat)= -0.6V(Max)@ IC= -5A100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationComplementary to 2SC3157APPLICATIONSHigh speed high voltage switching industrial useDC/DC convertersABSOLUTE MAX

isc Silicon PNP Power Transistor 2SA1217DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -40V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2877Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lowspeed switching applications.Suitable for output stage of 5

isc Silicon PNP Power Transistor 2SA1232DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -130V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC3012Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

isc Silicon PNP Power Transistor 2SA1263DESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Min) @I = -5ACE(sat) CGood Linearity of hFEComplement to Type 2SC3180Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 40W high fidelity audio frequencyamplifier output stage app

isc Silicon PNP Power Transistor 2SA1249DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = -160V (Min)(BR)CEOLarge Current CapacityComplement to Type 2SC3117Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV sound output, converters, inverters.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNIT

isc Silicon PNP Power Transistor 2SA1205DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -50V(Min)(BR)CEOLow Collector Saturation Voltage-: V = -0.5V(Max.)@ I = -5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

isc Silicon PNP Power Transistor 2SA1294DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -230V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC3263Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

isc Silicon PNP Power Transistor 2SA1263NDESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Min) @I = -5ACE(sat) CGood Linearity of hFEComplement to Type 2SC3180NMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 40W high fidelity audio frequencyamplifier output stage a

isc Silicon PNP Power Transistor 2SA1242DESCRIPTIONh =100-320(I = -0.5A; V = -2V)FE C CEh =70(Min)(I = -4A; V = -2V)FE C CELow Collector-Emitter Saturation Voltage-: V )= -1.0V(Max)( I = -4A; I = -0.1A)CE(sat C B Power Dissipation-High: P = 10W@T =25,P = 10W@Ta=25C C CMinimum Lot-to-Lot variations for robust device performanceand reliable operation

isc Silicon PNP Power Transistor 2SA1209DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -160V(Min)(BR)CEOGood Linearity of hFEHigh Switching SpeedComplement to Type 2SC2911Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage switching and AF 100W predriverapplications.ABSOLUTE MAXIMUM

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1227 2SA1227A DESCRIPTION With TO-3PFa package Complement to type 2SC2987/2987A High power dissipation APPLICATIONS For use in audio frequency power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDI

isc Silicon PNP Transistor 2SA1283DESCRIPTIONHigh Voltage and High CurrentVceo=-60V(Min.Excellent hFE LinearityLow NoiseMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency general purpose amplifier ApplicationsDriver stage amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER V

isc Silicon PNP Power Transistor 2SA1280DESCRIPTIONCollector-Emitter Breakdown Voltage: V = -150V(Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -15

isc Silicon PNP Power Transistor 2SA1214DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -50V (Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesinged for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE

isc Silicon PNP Power Transistor 2SA1265DESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Min) @I = -7ACE(sat) CGood Linearity of hFEComplement to Type 2SC3182Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 70W high fidelity audio frequencyamplifier output stage app

isc Silicon PNP Power Transistor 2SA1264DESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Min) @I = -6ACE(sat) CGood Linearity of hFEComplement to Type 2SC3181Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 55W high fidelity audio frequencyamplifier output stage app

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SA1220/A DESCRIPTION Good Linearity of hFEHigh Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min)-2SA1220 = -160V(Min)-2SA1220A Complement to Type 2SC2690/A APPLICATIONS Adudio frequency power amplifier High frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25)

isc Silicon PNP Power Transistor 2SA1293DESCRIPTIONLow Collector Saturation Voltage-: V = -0.4V(Max.)@I = -3ACE(sat) CFast Switching SpeedComplement to Type 2SC3258Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

isc Silicon PNP Power Transistor 2SA1265NDESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Min) @I = -7ACE(sat) CGood Linearity of hFEComplement to Type 2SC3182NMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 70W high fidelity audio frequencyamplifier output stage a

isc Silicon PNP Power Transistor 2SA1292DESCRIPTIONLow Collector Saturation Voltage-: V = -0.4V(Max.)@I = -7.5ACE(sat) CFast Switching SpeedComplement to Type 2SC3256Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVarious inductance lamp drivers for electrical equipment.Inverters,converters(strobo,flash,fluorescent l

isc Silicon PNP Power Transistor 2SA1227DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -140V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2987Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

isc Silicon PNP Power Transistor 2SA1295DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -230V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC3264Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA

isc Silicon PNP Power Transistor 2SA1225DESCRIPTIONHigh transition frequency100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationComplementary to 2SC2983APPLICATIONSPower amplifier applicationsDriver stage amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol

isc Silicon PNP Power Transistor 2SA1279DESCRIPTIONCollector-Emitter Breakdown Voltage: V = -60V(Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -60

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1216DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -180V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2922Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)

isc Silicon PNP Power Transistor 2SA1227ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -160V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2987AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1244DESCRIPTIONWith TO-251(IPAK) packagingHigh speed switching timeLow collector saturation voltageComplement to type 2SC3074Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMedium power dissipationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

isc Silicon PNP Power Transistors 2SA1220/ADESCRIPTIONGood Linearity of hFEHigh Collector-Emitter Breakdown Voltage-: V = -120V(Min)-2SA1220(BR)CEO= -160V(Min)-2SA1220AComplement to Type 2SC2690/AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAdudio frequency power amplifierHigh frequency power amplifierABSOLU

isc Silicon PNP Darlington Power Transistor 2SA1259DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = -2.5AFE CLow Collector-Emitter Saturation Voltage: V = -1.5V(Max)@ I = -2.5ACE(sat) CComplement to Type 2SC3145Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier high f and high

isc Silicon PNP Power Transistor 2SA1289DESCRIPTIONLow Collector Saturation Voltage-: V = -0.4V(Max.)@I = -2.5ACE(sat) CFast Switching SpeedComplement to Type 2SC3253Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVarious inductance lamp drivers for electrical equipment.Inverters, converters(strobo, flash, fluorescen

isc Silicon PNP Power Transistor 2SA1276DESCRIPTIONCollector-Emitter Breakdown Voltage: V = -30V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC3230Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Col

isc Silicon PNP Power Transistor 2SA1288DESCRIPTIONLow Collector Saturation VoltageLarge Current CapabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifiersSwitching regulatorABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -80 VCBOV Collector-Emitter Voltage -

isc Silicon PNP Power Transistor 2SA1264NDESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Min) @I = -6ACE(sat) CGood Linearity of hFEComplement to Type 2SC3181NMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 55W high fidelity audio frequencyamplifier output stage a