All Transistors. LBC847BDW1T3G Datasheet

 

LBC847BDW1T3G Datasheet and Replacement


   Type Designator: LBC847BDW1T3G
   SMD Transistor Code: 1F
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.38 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 4.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SOT363
 

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LBC847BDW1T3G Datasheet (PDF)

 ..1. Size:209K  lrc
lbc846bdw1t1g lbc846bdw1t3g lbc847bdw1t1g lbc847bdw1t3g lbc847cdw1t1g lbc847cdw1t3g lbc848bdw1t1g lbc848bdw1t3g lbc848cdw1t1g lbc848cdw1t3g lbc846adw1t1g lbc846adw1t3g.pdf pdf_icon

LBC847BDW1T3G

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsNPN DualsLBC846ADW1T1G These transistors are designed for general purpose amplifierLBC846BDW1T1Gapplications. They are housed in the SOT363/SC88 which isdesigned for low power surface mount applications.LBC847BDW1T1GWe declare that the material of product compliance with LBC847CDW1T1GRoHS requirements.LBC848

 ..2. Size:280K  lrc
lbc847bdw1t1g lbc847bdw1t3g.pdf pdf_icon

LBC847BDW1T3G

LBC847BDW1T1GS-LBC847BDW1T1GNPN Dual General Purpose Transistors1. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free.S- prefix for automotive and other applications requiringSC88(SOT-363) unique site and control change requirements; AEC-Q101 qualified and PPAP capable.2. DEVICE MARKING AND ORDERING INFORMATIONDevice

 3.1. Size:209K  lrc
lbc846bdw1t1g lbc847bdw1t1g lbc847cdw1t1g lbc848bdw1t1g lbc848cdw1t1g lbc846adw1t1g.pdf pdf_icon

LBC847BDW1T3G

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsNPN DualsLBC846ADW1T1G These transistors are designed for general purpose amplifierLBC846BDW1T1Gapplications. They are housed in the SOT363/SC88 which isdesigned for low power surface mount applications.LBC847BDW1T1GWe declare that the material of product compliance with LBC847CDW1T1GRoHS requirements.LBC848

 3.2. Size:230K  lrc
lbc847bdw1t1g.pdf pdf_icon

LBC847BDW1T3G

LESHAN RADIO COMPANY, LTD.LBC846ADW1T1GDual General Purpose TransistorsLBC846BDW1T1GLBC847BDW1T1GNPN DualsLBC847CDW1T1G These transistors are designed for general purpose amplifierLBC848BDW1T1Gapplications. They are housed in the SOT363/SC88 which isLBC848CDW1T1Gdesigned for low power surface mount applications.S-LBC846ADW1T1GWe declare that the material of produ

Datasheet: LBC817-40WT3G , LBC846ADW1T3G , LBC846ALT3G , LBC846AWT3G , LBC846BDW1T3G , LBC846BLT3G , LBC846BPDW1T3G , LBC847ALT3G , BD135 , LBC847BLT3G , LBC847BN3T5G , LBC847BPDW1T3G , LBC847CDW1T3G , LBC847CLT3G , LBC847CPDW1T3G , LBC847CTT1G , LBC848ALT3G .

History: KRC652U | 2SB856B | 2SB89 | LBC847CDW1T3G | 2SB864 | KT503G | 2SC5405

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