All Transistors. LBC849CLT3G Datasheet

 

LBC849CLT3G Datasheet, Equivalent, Cross Reference Search


   Type Designator: LBC849CLT3G
   SMD Transistor Code: 2C
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 4.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 420
   Noise Figure, dB: -
   Package: SOT-23

 LBC849CLT3G Transistor Equivalent Substitute - Cross-Reference Search

   

LBC849CLT3G Datasheet (PDF)

 ..1. Size:402K  lrc
lbc848blt3g lbc848clt1g lbc848clt3g lbc849blt1g lbc849blt3g lbc849clt1g lbc849clt3g lbc850blt1g lbc850blt3g lbc850clt1g lbc850clt3g lbc848blt1g.pdf

LBC849CLT3G
LBC849CLT3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1 LBC846ALT1GS-LBC846ALT1G ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 3and Control C

 ..2. Size:404K  lrc
lbc849clt1g lbc849clt3g lbc850blt1g lbc850blt3g lbc850clt1g lbc850clt3g.pdf

LBC849CLT3G
LBC849CLT3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1 LBC846ALT1GS-LBC846ALT1G ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Chang

 ..3. Size:227K  lrc
lbc848blt1g lbc848blt3g lbc848clt1g lbc848clt3g lbc849blt1g lbc849blt3g lbc849clt1g lbc849clt3g lbc850blt1g lbc850blt3g lbc850clt1g lbc850clt3g.pdf

LBC849CLT3G
LBC849CLT3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconLBC846ALT1G Moisture Sensitivity Level: 1 Series ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V We declare that the material of product compliance with RoHS requirements.31MAXIMUM RATINGS2Rating Symbol Value UnitCollectorEmitter Voltage VCEO VdcSOT23LBC846 6

 5.1. Size:402K  lrc
lbc846alt1g lbc846blt1g lbc847alt1g lbc847blt1g lbc847clt1g lbc848alt1g lbc848blt1g lbc848clt1g lbc849blt1g lbc849clt1g lbc850blt1g lbc850clt1g.pdf

LBC849CLT3G
LBC849CLT3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1LBC846ALT1G ESD Rating Human Body Model: >4000 VS-LBC846ALT1GESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Chan

 8.1. Size:404K  lrc
lbc847clt3g lbc848alt1g lbc848alt3g lbc848blt1g lbc848blt3g lbc848clt1g lbc848clt3g lbc849blt1g lbc849blt3g.pdf

LBC849CLT3G
LBC849CLT3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1 LBC846ALT1GS-LBC846ALT1G ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Chang

 9.1. Size:227K  lrc
lbc848cdw1t1g.pdf

LBC849CLT3G
LBC849CLT3G

LESHAN RADIO COMPANY, LTD.LBC846ADW1T1GDual General Purpose TransistorsLBC846BDW1T1GLBC847BDW1T1GNPN DualsLBC847CDW1T1G These transistors are designed for general purpose amplifierLBC848BDW1T1Gapplications. They are housed in the SOT363/SC88 which isLBC848CDW1T1Gdesigned for low power surface mount applications.S-LBC846ADW1T1GWe declare that the material of produ

 9.2. Size:172K  lrc
lbc848cpdw1t1g.pdf

LBC849CLT3G
LBC849CLT3G

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsLBC846BPDW1T1GLBC847BPDW1T1GNPN/PNP Duals (Complimentary)LBC847CPDW1T1G These transistors are designed for general purpose amplifierLBC848BPDW1T1Gapplications. They are housed in the SOT363/SC88 which isLBC848CPDW1T1Gdesigned for low power surface mount applications.We declare that the material of product comp

 9.3. Size:209K  lrc
lbc846bdw1t1g lbc846bdw1t3g lbc847bdw1t1g lbc847bdw1t3g lbc847cdw1t1g lbc847cdw1t3g lbc848bdw1t1g lbc848bdw1t3g lbc848cdw1t1g lbc848cdw1t3g lbc846adw1t1g lbc846adw1t3g.pdf

LBC849CLT3G
LBC849CLT3G

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsNPN DualsLBC846ADW1T1G These transistors are designed for general purpose amplifierLBC846BDW1T1Gapplications. They are housed in the SOT363/SC88 which isdesigned for low power surface mount applications.LBC847BDW1T1GWe declare that the material of product compliance with LBC847CDW1T1GRoHS requirements.LBC848

 9.4. Size:402K  lrc
lbc848blt1g.pdf

LBC849CLT3G
LBC849CLT3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1 LBC846ALT1GS-LBC846ALT1G ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 3and Control C

 9.5. Size:391K  lrc
lbc847bwt1g.pdf

LBC849CLT3G
LBC849CLT3G

LESHAN RADIO COMPANY, LTD.LBC846AWT1G,BWT1GGeneral Purpose TransistorsLBC847AWT1G,BWT1GNPN SiliconCWT1GWe declare that the material of product compliance with RoHS requirements.LBC848AWT1G,BWT1GCWT1G( )ORDERING INFORMATION Pb FreeS-LBC846AWT1G,BWT1GDevice Package ShippingS-LBC847AWT1G,BWT1GLBC846AWT1G SC-703000/Tape&ReelS-LBC846AWT1GCWT1GLBC846AWT3G SC-70

 9.6. Size:193K  lrc
lbc847cpdw1t1g.pdf

LBC849CLT3G
LBC849CLT3G

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsNPN/PNP Duals (Complimentary)LBC846BPDW1T1G These transistors are designed for general purpose amplifierLBC847BPDW1T1Gapplications. They are housed in the SOT363/SC88 which isLBC847CPDW1T1Gdesigned for low power surface mount applications.LBC848BPDW1T1GLBC848CPDW1T1GWe declare that the material of product comp

 9.7. Size:172K  lrc
lbc846bpdw1t1g lbc846bpdw1t3g lbc847bpdw1t1g lbc847bpdw1t3g lbc847cpdw1t1g lbc847cpdw1t3g lbc848bpdw1t1g lbc848bpdw1t3g lbc848cpdw1t1g lbc848cpdw1t3g.pdf

LBC849CLT3G
LBC849CLT3G

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsLBC846BPDW1T1GLBC847BPDW1T1GNPN/PNP Duals (Complimentary)LBC847CPDW1T1G These transistors are designed for general purpose amplifierLBC848BPDW1T1Gapplications. They are housed in the SOT363/SC88 which isLBC848CPDW1T1Gdesigned for low power surface mount applications.S-LBC846BPDW1T1GWe declare that the materi

 9.8. Size:229K  lrc
lbc847cdw1t1g.pdf

LBC849CLT3G
LBC849CLT3G

LESHAN RADIO COMPANY, LTD.LBC846ADW1T1GDual General Purpose TransistorsLBC846BDW1T1GNPN DualsLBC847BDW1T1GLBC847CDW1T1G These transistors are designed for general purpose amplifierLBC848BDW1T1Gapplications. They are housed in the SOT363/SC88 which isLBC848CDW1T1Gdesigned for low power surface mount applications.We declare that the material of product compliance wit

 9.9. Size:188K  lrc
lbc846bpdw1t1g.pdf

LBC849CLT3G
LBC849CLT3G

LESHAN RADIO COMPANY, LTD.LBC846BPDW1T1GDual General Purpose TransistorsLBC847BPDW1T1GLBC847CPDW1T1GNPN/PNP Duals (Complimentary)LBC848BPDW1T1G These transistors are designed for general purpose amplifierLBC848CPDW1T1Gapplications. They are housed in the SOT363/SC88 which isdesigned for low power surface mount applications.S-LBC846BPDW1T1GWe declare that the materi

 9.10. Size:311K  lrc
lbc846blt1g lbc846blt3g.pdf

LBC849CLT3G
LBC849CLT3G

LBC846BLT1GS-LBC846BLT1GGeneral Purpose Transistors NPN Silicon1. FEATURESSOT23(TO-236)Moisture Sensitivity Level: 1ESD Rating Human Body Model: >4000 V Machine Model: >400 VWe declare that the material of product compliance with RoHS requirements and Halogen Free.3COLLECTORS- prefix for automotive and other applications requiringunique site

 9.11. Size:392K  lrc
lbc847awt1g.pdf

LBC849CLT3G
LBC849CLT3G

LESHAN RADIO COMPANY, LTD.LBC846AWT1G,BWT1GGeneral Purpose TransistorsLBC847AWT1G,BWT1GNPN SiliconCWT1GWe declare that the material of product compliance with RoHS requirements.LBC848AWT1G,BWT1GS- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.CWT1G( )ORDERING INFORMATION Pb Free

 9.12. Size:398K  lrc
lbc846bwt1g.pdf

LBC849CLT3G
LBC849CLT3G

LESHAN RADIO COMPANY, LTD.LBC846AWT1G,BWT1GGeneral Purpose TransistorsLBC847AWT1G,BWT1GNPN SiliconCWT1GWe declare that the material of product compliance with RoHS requirements.LBC848AWT1G,BWT1GS- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.CWT1G( )ORDERING INFORMATION Pb Free

 9.13. Size:333K  lrc
lbc847alt1g.pdf

LBC849CLT3G
LBC849CLT3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1LBC846ALT1G ESD Rating Human Body Model: >4000 V SeriesESD Rating Machine Model: >400 V We declare that the material of product compliance with RoHSS-LBC846ALT1Grequirements. Series S- Prefix for Automotive and Other Applications Requiring UniqueSite and Co

 9.14. Size:226K  lrc
lbc848bdw1t1g.pdf

LBC849CLT3G
LBC849CLT3G

LESHAN RADIO COMPANY, LTD.LBC846ADW1T1GDual General Purpose TransistorsLBC846BDW1T1GNPN DualsLBC847BDW1T1GLBC847CDW1T1G These transistors are designed for general purpose amplifierLBC848BDW1T1Gapplications. They are housed in the SOT363/SC88 which isLBC848CDW1T1Gdesigned for low power surface mount applications.We declare that the material of product compliance wit

 9.15. Size:401K  lrc
lbc846awt1g lbc846bwt1g lbc847awt1g lbc847bwt1g lbc847cwt1g lbc848awt1g lbc848bwt1g lbc848cwt1g.pdf

LBC849CLT3G
LBC849CLT3G

LESHAN RADIO COMPANY, LTD.LBC846AWT1G,BWT1GGeneral Purpose TransistorsLBC847AWT1G,BWT1GNPN SiliconCWT1GWe declare that the material of product compliance with RoHS requirements.LBC848AWT1G,BWT1GS- Prefix for Automotive and Other Applications Requiring Unique Site andControl Change Requirements; AEC-Q101 Qualified and PPAP Capable.CWT1G( )ORDERING INFORMATIO

 9.16. Size:600K  lrc
lbc846awt1g.pdf

LBC849CLT3G
LBC849CLT3G

LESHAN RADIO COMPANY, LTD.LBC846AWT1G,BWT1GGeneral Purpose TransistorsLBC847AWT1G,BWT1GNPN SiliconCWT1GWe declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other Applications Requiring Unique SiteLBC848AWT1G,BWT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.CWT1G( )ORDERING INFORMATION Pb Free

 9.17. Size:172K  lrc
lbc846bpdw1t1g lbc847bpdw1t1g lbc847cpdw1t1g lbc848bpdw1t1g lbc848cpdw1t1g.pdf

LBC849CLT3G
LBC849CLT3G

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsLBC846BPDW1T1GLBC847BPDW1T1GNPN/PNP Duals (Complimentary)LBC847CPDW1T1G These transistors are designed for general purpose amplifierLBC848BPDW1T1Gapplications. They are housed in the SOT363/SC88 which isLBC848CPDW1T1Gdesigned for low power surface mount applications.S-LBC846BPDW1T1GWe declare that the materi

 9.18. Size:228K  lrc
lbc846bdw1t1g.pdf

LBC849CLT3G
LBC849CLT3G

LESHAN RADIO COMPANY, LTD.LBC846ADW1T1GDual General Purpose TransistorsLBC846BDW1T1GNPN DualsLBC847BDW1T1G These transistors are designed for general purpose amplifier LBC847CDW1T1GLBC848BDW1T1Gapplications. They are housed in the SOT363/SC88 which isLBC848CDW1T1Gdesigned for low power surface mount applications.S-LBC846ADW1T1GWe declare that the material of produc

 9.19. Size:440K  lrc
lbc846bdw1t1g lbc846bdw1t3g.pdf

LBC849CLT3G

 9.20. Size:394K  lrc
lbc848awt1g.pdf

LBC849CLT3G
LBC849CLT3G

LESHAN RADIO COMPANY, LTD.LBC846AWT1G,BWT1GGeneral Purpose TransistorsLBC847AWT1G,BWT1GNPN SiliconWe declare that the material of product compliance with RoHS requirements.CWT1GS- Prefix for Automotive and Other Applications Requiring Unique Site LBC848AWT1G,BWT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.CWT1G( )ORDERING INFORMATION Pb Free

 9.21. Size:402K  lrc
lbc846awt1g lbc846awt3g.pdf

LBC849CLT3G
LBC849CLT3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC846AWT1G,BWT1GLBC847AWT1G,BWT1GNPN SiliconWe declare that the material of product compliance with RoHS requirements. CWT1GS- Prefix for Automotive and Other Applications Requiring Unique SiteLBC848AWT1G,BWT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.CWT1G( )ORDERING INFORMATION Pb Free

 9.22. Size:404K  lrc
lbc847clt1g.pdf

LBC849CLT3G
LBC849CLT3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1 LBC846ALT1GS-LBC846ALT1G ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Chang

 9.23. Size:404K  lrc
lbc846alt1g lbc846alt3g lbc846blt1g lbc846blt3g lbc847alt1g lbc847alt3g lbc847blt1g lbc847blt3g lbc847clt1g.pdf

LBC849CLT3G
LBC849CLT3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1 LBC846ALT1GS-LBC846ALT1G ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Chang

 9.24. Size:407K  lrc
lbc848clt1g.pdf

LBC849CLT3G
LBC849CLT3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1LBC846ALT1G ESD Rating Human Body Model: >4000 VS-LBC846ALT1GESD Rating Machine Model: >400 V We declare that the material of product compliance with RoHS requirements. Series S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Chang

 9.25. Size:224K  lrc
lbc846adw1t1g.pdf

LBC849CLT3G
LBC849CLT3G

LESHAN RADIO COMPANY, LTD.LBC846ADW1T1GLBC846BDW1T1GDual General Purpose TransistorsLBC847BDW1T1GLBC847CDW1T1GNPN DualsLBC848BDW1T1GLBC848CDW1T1G These transistors are designed for general purpose amplifierapplications. They are housed in the SOT363/SC88 which isS-LBC846ADW1T1Gdesigned for low power surface mount applications. S-LBC846BDW1T1GS-LBC847BDW1T1GWe d

 9.26. Size:209K  lrc
lbc846bdw1t1g lbc847bdw1t1g lbc847cdw1t1g lbc848bdw1t1g lbc848cdw1t1g lbc846adw1t1g.pdf

LBC849CLT3G
LBC849CLT3G

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsNPN DualsLBC846ADW1T1G These transistors are designed for general purpose amplifierLBC846BDW1T1Gapplications. They are housed in the SOT363/SC88 which isdesigned for low power surface mount applications.LBC847BDW1T1GWe declare that the material of product compliance with LBC847CDW1T1GRoHS requirements.LBC848

 9.27. Size:850K  lrc
lbc847bn3t5g.pdf

LBC849CLT3G
LBC849CLT3G

LBC847BN3T5GS-LBC847BN3T5GGeneral Purpose Transistors NPN Silicon1. FEATURESSOT883Moisture Sensitivity Level: 1ESD Rating Human Body Model: >4000 V Machine Model: >400 V3 COLLECTORWe declare that the material of product compliance with RoHS requirements and Halogen Free.1 BASES- prefix for automotive and other applications requiringunique sit

 9.28. Size:402K  lrc
lbc848alt1g.pdf

LBC849CLT3G
LBC849CLT3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1LBC846ALT1G ESD Rating Human Body Model: >4000 VS-LBC846ALT1GESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Chan

 9.29. Size:402K  lrc
lbc846alt1g lbc846alt3g lbc846blt1g lbc846blt3g lbc847alt1g lbc847alt3g lbc847blt1g lbc847blt3g lbc847clt1g lbc847clt3g lbc848alt1g lbc848alt3g.pdf

LBC849CLT3G
LBC849CLT3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1 LBC846ALT1GS-LBC846ALT1G ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 3and Control C

 9.30. Size:409K  lrc
lbc846blt1g.pdf

LBC849CLT3G
LBC849CLT3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC846ALT1GNPN Silicon Series Moisture Sensitivity Level: 1S-LBC846ALT1G ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site3and

 9.31. Size:402K  lrc
lbc847cwt1g.pdf

LBC849CLT3G
LBC849CLT3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC846AWT1G,BWT1GLBC847AWT1G,BWT1GNPN SiliconWe declare that the material of product compliance with RoHS requirements. CWT1GS- Prefix for Automotive and Other Applications Requiring Unique SiteLBC848AWT1G,BWT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.CWT1G( )ORDERING INFORMATION Pb Free

 9.32. Size:396K  lrc
lbc848cwt1g.pdf

LBC849CLT3G
LBC849CLT3G

LESHAN RADIO COMPANY, LTD.LBC846AWT1G,BWT1GGeneral Purpose TransistorsLBC847AWT1G,BWT1GNPN SiliconWe declare that the material of product compliance with RoHS requirements.CWT1GS- Prefix for Automotive and Other Applications Requiring Unique Site LBC848AWT1G,BWT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.CWT1G( )ORDERING INFORMATION Pb Free

 9.33. Size:407K  lrc
lbc846alt1g.pdf

LBC849CLT3G
LBC849CLT3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1LBC846ALT1G ESD Rating Human Body Model: >4000 VS-LBC846ALT1GESD Rating Machine Model: >400 V We declare that the material of product compliance with RoHS requirements. Series S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Chang

 9.34. Size:138K  lrc
lbc847btt1g.pdf

LBC849CLT3G
LBC849CLT3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconLBC847ATT1GThese transistors are designed for general purpose amplifierS-LBC847ATT1Gapplications. They are housed in the SC-89 package which is designed for low power surface mount applications. SeriesFeatures Pb-Free Packages are Available S- Prefix for Automotive and Other Applications Requiring Unique

 9.35. Size:172K  lrc
lbc847bpdw1t1g.pdf

LBC849CLT3G
LBC849CLT3G

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsLBC846BPDW1T1GLBC847BPDW1T1GNPN/PNP Duals (Complimentary)LBC847CPDW1T1G These transistors are designed for general purpose amplifierLBC848BPDW1T1Gapplications. They are housed in the SOT363/SC88 which isLBC848CPDW1T1Gdesigned for low power surface mount applications.S-LBC846BPDW1T1GWe declare that the materi

 9.36. Size:173K  lrc
lbc848bpdw1t1g.pdf

LBC849CLT3G
LBC849CLT3G

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsLBC846BPDW1T1GLBC847BPDW1T1GNPN/PNP Duals (Complimentary)LBC847CPDW1T1G These transistors are designed for general purpose amplifierLBC848BPDW1T1Gapplications. They are housed in the SOT363/SC88 which isLBC848CPDW1T1Gdesigned for low power surface mount applications.We declare that the material of product comp

 9.37. Size:280K  lrc
lbc847bdw1t1g lbc847bdw1t3g.pdf

LBC849CLT3G
LBC849CLT3G

LBC847BDW1T1GS-LBC847BDW1T1GNPN Dual General Purpose Transistors1. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free.S- prefix for automotive and other applications requiringSC88(SOT-363) unique site and control change requirements; AEC-Q101 qualified and PPAP capable.2. DEVICE MARKING AND ORDERING INFORMATIONDevice

 9.38. Size:139K  lrc
lbc847att1g lbc847btt1g lbc847ctt1g.pdf

LBC849CLT3G
LBC849CLT3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconLBC847ATT1GThese transistors are designed for general purpose amplifierS-LBC847ATT1Gapplications. They are housed in the SC-89 package which is designed for low power surface mount applications. SeriesFeatures Pb-Free Packages are Available S- Prefix for Automotive and Other Applications Requiring Unique

 9.39. Size:230K  lrc
lbc847bdw1t1g.pdf

LBC849CLT3G
LBC849CLT3G

LESHAN RADIO COMPANY, LTD.LBC846ADW1T1GDual General Purpose TransistorsLBC846BDW1T1GLBC847BDW1T1GNPN DualsLBC847CDW1T1G These transistors are designed for general purpose amplifierLBC848BDW1T1Gapplications. They are housed in the SOT363/SC88 which isLBC848CDW1T1Gdesigned for low power surface mount applications.S-LBC846ADW1T1GWe declare that the material of produ

 9.40. Size:415K  lrc
lbc847blt1g.pdf

LBC849CLT3G
LBC849CLT3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1LBC846ALT1G ESD Rating Human Body Model: >4000 VS-LBC846ALT1GESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Chan

 9.41. Size:396K  lrc
lbc848bwt1g.pdf

LBC849CLT3G
LBC849CLT3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC846AWT1G,BWT1GNPN SiliconLBC847AWT1G,BWT1GWe declare that the material of product compliance with RoHS requirements.CWT1GS- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.LBC848AWT1G,BWT1GCWT1G( )ORDERING INFORMATION Pb Free

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: TMPTA13

 

 
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