LDTA143TET1G Datasheet. Specs and Replacement
Type Designator: LDTA143TET1G
SMD Transistor Code: 6F
Material of Transistor: Si
Polarity: PNP
Built in Bias Resistor R1 = 4.7 kOhm
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 160
Package: SC89
LDTA143TET1G Substitution
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LDTA143TET1G datasheet
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ldta114eet1g ldta114tet1g ldta124xet1g ldta143eet1g ldta144eet1g.pdf 
LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors LDTC114EET1G Series S-LDTC114EET1G Series NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network cons... See More ⇒
LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor LDTA144GET1G with Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1 resistors (see equivalent circuit). 2 2) The bias resistors consist ... See More ⇒
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Detailed specifications: LDTA114TET1G, LDTA114YET1G, LDTA115EET1G, LDTA123EET1G, LDTA123JET1G, LDTA124EET1G, LDTA124XET1G, LDTA143EET1G, BDT88, LDTA143ZET1G, LDTA144EET1G, LDTA144WET1G, LDTC144WM3T5G, LDTD123YLT1G, LDTD123YLT3G, LH8050PLT3G, LH8050QLT3G
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