All Transistors. LMBT3906N3T5G Datasheet

 

LMBT3906N3T5G Datasheet, Equivalent, Cross Reference Search


   Type Designator: LMBT3906N3T5G
   SMD Transistor Code: 2A
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 4.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT883

 LMBT3906N3T5G Transistor Equivalent Substitute - Cross-Reference Search

   

LMBT3906N3T5G Datasheet (PDF)

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lmbt3906n3t5g.pdf

LMBT3906N3T5G
LMBT3906N3T5G

LMBT3906N3T5G3S-LMBT3906N3T5G1General Purpose Transistors PNP Silicon21. FEATURES We declare that the material of product compliance withSOT883RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. COLLECTOR32. DEVICE MARKING AND ORDERING INF

 6.1. Size:357K  lrc
lmbt3906lt1g lmbt3906lt3g.pdf

LMBT3906N3T5G
LMBT3906N3T5G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP Silicon We declare that the material of product compliance with RoHS requirements.LMBT3906LT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LMBT3906LT1GORDERING INFORMATION3Device Marking ShippingLMBT3906LT1G 2A3000

 6.2. Size:584K  lrc
lmbt3906wt1g.pdf

LMBT3906N3T5G
LMBT3906N3T5G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconLMBT3906WT1GFEATURESS-LMBT3906WT1G1) We declare that the material of product compliant withRoHS requirements and Halogen Free.2) S- Prefix for Automotive and Other Applications Requiring3Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.12DEVICE MARKING AND ORDERING I

 6.3. Size:203K  lrc
lmbt3906tt1g lmbt3906tt3g.pdf

LMBT3906N3T5G
LMBT3906N3T5G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFEATURE Simplifies Circuit Design. We declare that the material of product compliance with RoHS requirements.LMBT3906TT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LMBT3906TT1GORDERING INFORMATIONDevice Mark

 6.4. Size:203K  lrc
lmbt3906tt1g.pdf

LMBT3906N3T5G
LMBT3906N3T5G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFEATURE Simplifies Circuit Design. We declare that the material of product compliance with RoHS requirements.LMBT3906TT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LMBT3906TT1GORDERING INFORMATIONDevice Mark

 6.5. Size:490K  lrc
lmbt3906wt1g lmbt3906wt3g.pdf

LMBT3906N3T5G

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lmbt3906dw1t1g.pdf

LMBT3906N3T5G
LMBT3906N3T5G

LESHAN RADIO COMPANY, LTD.Dual Bias ResistorLMBT3906DW1T1GTransistor654The LMBT3906DW1T1 device isa spinoff of our popularSOT23/SOT323 threeleaded device. It is designed for generalpurpose amplifier applications and is housed in the SOT3631sixleaded surface mount package. By putting two discrete devices in23one package, this device is ideal for low

 6.7. Size:632K  lrc
lmbt3906lt1g.pdf

LMBT3906N3T5G
LMBT3906N3T5G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconLMBT3906LT1GS-LMBT3906LT1GFEATURES1) We declare that the material of product compliant with3RoHS requirements and Halogen Free.2) S- Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.12DEVICE MARKING AND ORDERING I

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: KTC4793

 

 
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