All Transistors. LMBT5550LT3G Datasheet

 

LMBT5550LT3G Datasheet and Replacement


   Type Designator: LMBT5550LT3G
   SMD Transistor Code: M1F
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 160 V
   Maximum Collector-Emitter Voltage |Vce|: 140 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: SOT23
 

 LMBT5550LT3G Substitution

   - BJT ⓘ Cross-Reference Search

   

LMBT5550LT3G Datasheet (PDF)

 ..1. Size:166K  lrc
 lmbt5550lt3g lmbt5551lt3g lmbt5550lt1g lmbt5551lt1g.pdf pdf_icon

LMBT5550LT3G

LESHAN RADIO COMPANY, LTD.High Voltage TransistorsFEATURE We declare that the material of product compliance with RoHS requirements. LMBT5550LT1G S- Prefix for Automotive and Other Applications Requiring Unique LMBT5551LT1GSite and Control Change Requirements; AEC-Q101 Qualified and S-LMBT5550LT1GPPAP Capable.S-LMBT5551LT1GDEVICE MARKING AND ORDERING INFORMATION3

 4.1. Size:166K  lrc
 lmbt5550lt1g lmbt5551lt1g.pdf pdf_icon

LMBT5550LT3G

LESHAN RADIO COMPANY, LTD.High Voltage TransistorsFEATURE We declare that the material of product compliance with RoHS requirements. LMBT5550LT1G S- Prefix for Automotive and Other Applications Requiring Unique LMBT5551LT1GSite and Control Change Requirements; AEC-Q101 Qualified and S-LMBT5550LT1GPPAP Capable.S-LMBT5551LT1GDEVICE MARKING AND ORDERING INFORMATION3

 7.1. Size:135K  lrc
 lmbt5551dw1t1g.pdf pdf_icon

LMBT5550LT3G

LESHAN RADIO COMPANY, LTD.DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTORLMBT5551DW1T1GFEATURE We declare that the material of product compliance with RoHS requirements. S-LMBT5551DW1T1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.6DEVICE MARKING AND ORDERING INFORMATION54De

 7.2. Size:166K  lrc
 lmbt5551lt1g.pdf pdf_icon

LMBT5550LT3G

LESHAN RADIO COMPANY, LTD.High Voltage TransistorsFEATURE We declare that the material of product compliance with RoHS requirements. LMBT5550LT1G S- Prefix for Automotive and Other Applications Requiring Unique LMBT5551LT1GSite and Control Change Requirements; AEC-Q101 Qualified and S-LMBT5550LT1GPPAP Capable.S-LMBT5551LT1GDEVICE MARKING AND ORDERING INFORMATION3

SHOW MORE

Datasheet: LMBT3946DW1T3G , LMBT4401LT3G , LMBT4401WT3G , LMBT4403LT3 , LMBT5401DW1T3G , LMBT5401LT3G , LMBT5541DW1T3G , LMBT5550LT1G , S9014 , LMBT5551DW1T3G , LMBT5551LT3G , LMBT6428LT3G , LMBT6517LT3G , LMBT6520LT3G , LMBTA42LT3G , LMBTA43LT3G , LMBTA56LT3G .

Keywords - LMBT5550LT3G transistor datasheet

 LMBT5550LT3G cross reference
 LMBT5550LT3G equivalent finder
 LMBT5550LT3G lookup
 LMBT5550LT3G substitution
 LMBT5550LT3G replacement

 

 
Back to Top

 


 
.