All Transistors. LMBT5551DW1T3G Datasheet

 

LMBT5551DW1T3G Datasheet and Replacement


   Type Designator: LMBT5551DW1T3G
   SMD Transistor Code: G1
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 180 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SOT363
      - BJT Cross-Reference Search

   

LMBT5551DW1T3G Datasheet (PDF)

 ..1. Size:990K  lrc
lmbt5551dw1t1g lmbt5551dw1t3g.pdf pdf_icon

LMBT5551DW1T3G

LMBT5551DW1T1GS-LMBT5551DW1T1GDUAL NPN SMALL SIGNAL SURFACEMOUNT TRANSISTOR 1. FEATURESWe declare that the material of product compliance withSC88(SOT-363) RoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101C2 B1 E1 qualified and PPAP capable.2. DEVICE MARKING AND ORD

 2.1. Size:135K  lrc
lmbt5551dw1t1g.pdf pdf_icon

LMBT5551DW1T3G

LESHAN RADIO COMPANY, LTD.DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTORLMBT5551DW1T1GFEATURE We declare that the material of product compliance with RoHS requirements. S-LMBT5551DW1T1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.6DEVICE MARKING AND ORDERING INFORMATION54De

 6.1. Size:166K  lrc
lmbt5550lt1g lmbt5551lt1g.pdf pdf_icon

LMBT5551DW1T3G

LESHAN RADIO COMPANY, LTD.High Voltage TransistorsFEATURE We declare that the material of product compliance with RoHS requirements. LMBT5550LT1G S- Prefix for Automotive and Other Applications Requiring Unique LMBT5551LT1GSite and Control Change Requirements; AEC-Q101 Qualified and S-LMBT5550LT1GPPAP Capable.S-LMBT5551LT1GDEVICE MARKING AND ORDERING INFORMATION3

 6.2. Size:166K  lrc
lmbt5551lt1g.pdf pdf_icon

LMBT5551DW1T3G

LESHAN RADIO COMPANY, LTD.High Voltage TransistorsFEATURE We declare that the material of product compliance with RoHS requirements. LMBT5550LT1G S- Prefix for Automotive and Other Applications Requiring Unique LMBT5551LT1GSite and Control Change Requirements; AEC-Q101 Qualified and S-LMBT5550LT1GPPAP Capable.S-LMBT5551LT1GDEVICE MARKING AND ORDERING INFORMATION3

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 2SA416 | DMJT9435 | 2N249 | 2SC3298A | 2N5031 | 2SA982 | 2N677B

Keywords - LMBT5551DW1T3G transistor datasheet

 LMBT5551DW1T3G cross reference
 LMBT5551DW1T3G equivalent finder
 LMBT5551DW1T3G lookup
 LMBT5551DW1T3G substitution
 LMBT5551DW1T3G replacement

 

 
Back to Top

 


 
.