LMBT5551DW1T3G Datasheet, Equivalent, Cross Reference Search
Type Designator: LMBT5551DW1T3G
SMD Transistor Code: G1
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SOT363
LMBT5551DW1T3G Transistor Equivalent Substitute - Cross-Reference Search
LMBT5551DW1T3G Datasheet (PDF)
lmbt5551dw1t1g lmbt5551dw1t3g.pdf
LMBT5551DW1T1GS-LMBT5551DW1T1GDUAL NPN SMALL SIGNAL SURFACEMOUNT TRANSISTOR 1. FEATURESWe declare that the material of product compliance withSC88(SOT-363) RoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101C2 B1 E1 qualified and PPAP capable.2. DEVICE MARKING AND ORD
lmbt5551dw1t1g.pdf
LESHAN RADIO COMPANY, LTD.DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTORLMBT5551DW1T1GFEATURE We declare that the material of product compliance with RoHS requirements. S-LMBT5551DW1T1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.6DEVICE MARKING AND ORDERING INFORMATION54De
lmbt5550lt1g lmbt5551lt1g.pdf
LESHAN RADIO COMPANY, LTD.High Voltage TransistorsFEATURE We declare that the material of product compliance with RoHS requirements. LMBT5550LT1G S- Prefix for Automotive and Other Applications Requiring Unique LMBT5551LT1GSite and Control Change Requirements; AEC-Q101 Qualified and S-LMBT5550LT1GPPAP Capable.S-LMBT5551LT1GDEVICE MARKING AND ORDERING INFORMATION3
lmbt5551lt1g.pdf
LESHAN RADIO COMPANY, LTD.High Voltage TransistorsFEATURE We declare that the material of product compliance with RoHS requirements. LMBT5550LT1G S- Prefix for Automotive and Other Applications Requiring Unique LMBT5551LT1GSite and Control Change Requirements; AEC-Q101 Qualified and S-LMBT5550LT1GPPAP Capable.S-LMBT5551LT1GDEVICE MARKING AND ORDERING INFORMATION3
lmbt5550lt3g lmbt5551lt3g lmbt5550lt1g lmbt5551lt1g.pdf
LESHAN RADIO COMPANY, LTD.High Voltage TransistorsFEATURE We declare that the material of product compliance with RoHS requirements. LMBT5550LT1G S- Prefix for Automotive and Other Applications Requiring Unique LMBT5551LT1GSite and Control Change Requirements; AEC-Q101 Qualified and S-LMBT5550LT1GPPAP Capable.S-LMBT5551LT1GDEVICE MARKING AND ORDERING INFORMATION3
lmbt5551lt1g lmbt5551lt3g.pdf
LMBT5551LT1GS-LMBT5551LT1GHigh Voltage Transistors1. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.SOT232. DEVICE MARKING AND ORDERING INFORMATIONDevice Marking ShippingLMB
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
