2SB772SQ Datasheet. Specs and Replacement
Type Designator: 2SB772SQ
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 80 MHz
Collector Capacitance (Cc): 55 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package: SOT89
2SB772SQ Substitution
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2SB772SQ datasheet
2SB772SQ Silicon PNP Power Transistor Features High current output up to 3A Low saturation voltage Complement to 2SD882SQ SOT-89 PIN1 Base PIN 2 Collector PIN 3 Emitter Applications These devices are intended for use in audio frequency power amplifier and low speed switching applications Absolute Maximum Ratings (Ta=25 unless otherwise specified) Parameter Symbol... See More ⇒
2sb772sq-r 2sb772sq-q 2sb772sq-p 2sb772sq-e.pdf 
2SB772SQ Silicon PNP Power Transistor Features High current output up to 3A Low saturation voltage Complement to 2SD882SQ SOT-89 PIN1 Base PIN 2 Collector PIN 3 Emitter Applications These devices are intended for use in audio frequency power amplifier and low speed switching applications Absolute Maximum Ratings (Ta=25 unless otherwise specified) Parameter Symbo... See More ⇒
Detailed specifications: MMBT2222AM, MMDT9014, MMDT9015, TK3904LED03, S8550L, S8550H, JZT955, 2SC3356-R25, A42, 2SD882SQ, H8550D, KST8050D, KST8550D, 3DD13005ED-V, 3DD13005ED-F, 3DD13005ED-B, 3DD13005ED-S
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