All Transistors. K8050S-B Datasheet

 

K8050S-B Datasheet, Equivalent, Cross Reference Search


   Type Designator: K8050S-B
   SMD Transistor Code: KL7
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.35 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 7.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 85
   Noise Figure, dB: -
   Package: SOT23

 K8050S-B Transistor Equivalent Substitute - Cross-Reference Search

   

K8050S-B Datasheet (PDF)

 8.1. Size:945K  kodenshi
k8050s.pdf

K8050S-B
K8050S-B

K8050S NPN Silicon Transistor 2018.09.07 2018.09.07 2018.09.07 2018.09.07 1 000 2017.11.02 2 001 2018.08.22 3 TAPING 003 2018.09.07 K8050S NPN S

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

 

 
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