2SA1943RTU PDF and Equivalents Search

 ..1. Size:330K  onsemi

 2sa1943rtu 2sa1943otu fjl4215rtu fjl4215otu.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 6.1. Size:224K  toshiba

 2sa1943r 2sa1943o.pdf

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 6.2. Size:425K  cn sptech

 2sa1943r 2sa1943o.pdf

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1943 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -230V(Min) (BR)CEO Complement to Type 2SC5200 APPLICATIONS Power amplifier applications Recommended for 100W high fidelity audio frequency amplifier output stage ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base V... See More ⇒

 7.1. Size:156K  toshiba

 2sa1943n.pdf

2SA1943N Bipolar Transistors Silicon PNP Triple-Diffused Type 2SA1943N 2SA1943N 2SA1943N 2SA1943N 1. Applications 1. Applications 1. Applications 1. Applications Power Amplifiers 2. Features 2. Features 2. Features 2. Features (1) High collector voltage VCEO = -230 V (min) (2) Complementary to 2SC5200N (3) Recommended for 100-W high-fidelity audio frequency amplifier outpu... See More ⇒

 7.2. Size:133K  toshiba

 2sa1943.pdf

2SA1943 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1943 Power Amplifier Applications Unit mm High collector voltage VCEO = -230 V (min) Complementary to 2SC5200 Recommended for 100-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -230 V Coll... See More ⇒

 7.3. Size:487K  fairchild semi

 2sa1943 fjl4215.pdf

January 2009 2SA1943/FJL4215 PNP Epitaxial Silicon Transistor Applications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability IC = -17A. High Power Dissipation 150watts. TO-264 1 High Frequency 30MHz. 1.Base 2.Collector 3.Emitter High Voltage VCEO= -250V Wide S.O.A for reliable operation. Ex... See More ⇒

 7.4. Size:182K  utc

 2sa1943.pdf

UNISONIC TECHNOLOGIES CO., LTD 2SA1943 PNP SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS FEATURES * Complementary to UTC 2SC5200 * Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage 1 TO-3PL ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SA1943L-x-T3L-T 2SA1943G-x-T3L-T TO-3PL B C E Tube 2SA... See More ⇒

 7.5. Size:198K  jmnic

 2sa1943.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1943 DESCRIPTION With TO-3PL package Complement to type 2SC5200 APPLICATIONS Power amplifier applications Recommended for 100W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbol ... See More ⇒

 7.6. Size:2259K  jilin sino

 2sa1943.pdf

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 7.7. Size:219K  nell

 2sa1943bl.pdf

RoHS 2SA1943BL Series RoHS SEMICONDUCTOR Nell High Power Products Silicon PNP triple diffusion planar transistor -15A/-230V/150W 5.00 20.00 0.20 18.00 3.30 0.20 TO-3PL FEATURES High breakdown voltage, VCEO = -230V (min) Complementary to 2SC5200BL 0.60 3.20 TO-3PL package which can be installed to the 5.45 0.05 5.45 0.05 heat sink with one screw 1 2 3 APPLICATIONS S... See More ⇒

 7.8. Size:848K  cn evvo

 2sa1943.pdf

Silicon NPN transistor Features Power Amplifier Applications Complementary to 2SC5200 High collector voltage VCEO=230V (min) Recommended for 100-W high-fidelity audio frequency amplifier Output stage Note Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this produc... See More ⇒

 7.9. Size:1806K  cn sps

 2sa1943t7tl.pdf

2SA1943T7TL Silicon PNP Power Transistor DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -230V(Min) (BR)CEO Complement to Type 2SC5200 APPLICATIONS Power amplifier applications Recommended for 100W high fidelity audio frequency amplifier output stage ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -230 V CBO V Collector-... See More ⇒

 7.10. Size:145K  cn minos

 2sa1943.pdf

2SA1943 Minos High Power Products PNP TRANSISTORS Features Power Amplifier Applications Complementaryto2SC5200 Highcollector voltage VCEO=-230V (min) Recommendedfor 100-Whigh-fidelity audiofrequency amplifier Output stage Note Using continuously under heavy loads (e.g. theapplication of hightemperature/current/voltageandthe significant change in temperature, etc.) may causethis pro... See More ⇒

 7.11. Size:214K  inchange semiconductor

 2sa1943n.pdf

isc Silicon PNP Power Transistor 2SA1943N DESCRIPTION High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- V = -230V(Min) (BR)CEO Complement to Type 2SC5200N Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 100W high fidelity audio frequency a... See More ⇒

 7.12. Size:204K  inchange semiconductor

 2sa1943.pdf

isc Silicon PNP Power Transistor 2SA1943 DESCRIPTION High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- V =- 230V(Min) (BR)CEO Complement to Type 2SC5200 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 100W high fidelity audio frequency amp... See More ⇒