BC846BMTF Datasheet, Equivalent, Cross Reference Search
Type Designator: BC846BMTF
SMD Transistor Code: 8AB
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.31 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 65 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 3.5 pF
Forward Current Transfer Ratio (hFE), MIN: 110
Noise Figure, dB: -
Package: SOT23
BC846BMTF Transistor Equivalent Substitute - Cross-Reference Search
BC846BMTF Datasheet (PDF)
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BC846 / BC847 / BC848 / BC850NPN Epitaxial Silicon TransistorFeatures3 Switching and Amplifier Applications Suitable for Automatic Insertion in Thick and Thin-film Circuits Low Noise: BC8502 Complement to BC856, BC857, BC858, BC859, and BC860SOT-2311. Base 2. Emitter 3. CollectorOrdering Information(1)Part Number Marking Package Packing MethodBC846AMTF 8A
bc846bmb.pdf
BC846BMB65 V, 100 mA NPN general-purpose transistorRev. 1 15 May 2012 Product data sheet1. Product profile1.1 General descriptionNPN general-purpose transistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.1.2 Features and benefits Leadless ultra small SMD plastic package Low package height of 0.37 mm Power dissipati
bc846bm.pdf
BC846BM65 V, 100 mA NPN general-purpose transistor20 August 2015 Product data sheet1. General descriptionNPN general-purpose transistor in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package.PNP complement: BC856BM.2. Features and benefits Leadless ultra small SMD plastic package Power dissipation comparable to SOT23 AEC-Q101 quali
nsvbc846bm3t5g.pdf
BC846BM3T5G,NSVBC846BM3T5GGeneral Purpose TransistorNPN Silicon Moisture Sensitivity Level: 1http://onsemi.com ESD Rating: Human Body Model: >4000 VMachine Model: >400 VCOLLECTOR NSV Prefix for Automotive and Other Applications Requiring3Unique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE This is a Pb-Free Device2EMI
bc846bm3t5g nsvbc846bm3t5g.pdf
BC846BM3T5G,NSVBC846BM3T5GGeneral Purpose TransistorNPN Silicon Moisture Sensitivity Level: 1http://onsemi.com ESD Rating: Human Body Model: >4000 VMachine Model: >400 VCOLLECTOR NSV Prefix for Automotive and Other Applications Requiring3Unique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE This is a Pb-Free Device2EMI
bc846bm3-d.pdf
BC846BM3T5GGeneral Purpose TransistorNPN Silicon Moisture Sensitivity Level: 1 ESD Rating: Human Body Model: >4000 VMachine Model: >400 Vhttp://onsemi.com This is a Pb-Free DeviceCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit 1BASECollector-Emitter Voltage VCEO 65 Vdc2Collector-Base Voltage VCBO 80 VdcEMITTEREmitter-Base Voltage VEBO 6.0 VdcCollec
bc846bm3.pdf
BC846BM3T5G,NSVBC846BM3T5GGeneral Purpose TransistorNPN Silicon Moisture Sensitivity Level: 1http://onsemi.com ESD Rating: Human Body Model: >4000 VMachine Model: >400 VCOLLECTOR NSV Prefix for Automotive and Other Applications Requiring3Unique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE This is a Pb-Free Device2EMI
Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , 2SA1015 , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .
