BCH807-16L Datasheet, Equivalent, Cross Reference Search
Type Designator: BCH807-16L
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT23
BCH807-16L Transistor Equivalent Substitute - Cross-Reference Search
BCH807-16L Datasheet (PDF)
..1. Size:204K onsemi
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General PurposeTransistorsPNP SiliconBCH807-16L/25L/40L,NSVBCH807-16L/25L/40Lwww.onsemi.comFeatures 175C TJ(max) - Rated for High Temperature, Mission CriticalCOLLECTORApplications3 NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE These Devices are Pb-Free, Ha
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
