BCH807-40L Specs and Replacement

Type Designator: BCH807-40L

SMD Transistor Code: 5E

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.225 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 10 pF

Forward Current Transfer Ratio (hFE), MIN: 250

Noise Figure, dB: -

Package: SOT23

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BCH807-40L datasheet

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 bch807-16l bch807-25l bch807-40l nsvbch807-16l nsvbch807-25l nsvbch807-40l.pdf pdf_icon

BCH807-40L

General Purpose Transistors PNP Silicon BCH807-16L/25L/40L, NSVBCH807-16L/25L/40L www.onsemi.com Features 175 C TJ(max) - Rated for High Temperature, Mission Critical COLLECTOR Applications 3 NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 1 Qualified and PPAP Capable BASE These Devices are Pb-Free, Ha... See More ⇒

Detailed specifications: BC859BMTF, BC859CLT1G, BC859CMTF, BC860AMTF, BC860BMTF, BC860CMTF, BCH807-16L, BCH807-25L, C945, BCH817-16L, BCH817-25L, BCH817-40L, BCP56T1, BCX18LT1G, BD13510STU, BD13516S, BD13516STU

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