BD433S Datasheet and Replacement
Type Designator: BD433S
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 36 W
Maximum Collector-Base Voltage |Vcb|: 22 V
Maximum Collector-Emitter Voltage |Vce|: 22 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO-126
BD433S Substitution
BD433S Datasheet (PDF)
bd433 bd435 bd437 bd434 bd436 bd438.pdf

BD433/5/7BD434/6/8COMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD433, BD435, and BD437 are siliconepitaxial-base NPN power transistors in JedecSOT-32 plastic package, intented for use inmedium power linear and switching applications.The BD433 is especially suitable for use in12car-radio output
bd433 bd434 bd435 bd436 bd437 bd438.pdf

BD433/5/7BD434/6/8COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERREDSALESTYPE COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD433, BD435, and BD437 are siliconepitaxial-base NPN power transistors in JedecSOT-32 plastic package, intented for use inmedium power linear and switching applications.12The BD433 is especially suitable for use in3car
bd433 bd435 bd437.pdf

BD433/435/437Medium Power Linear and Switching Applications Complement to BD434, BD436 and BD438 respectivelyTO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage: BD433 22 V: BD435 32 V: BD437 45 V VCES Collector-Emitter Voltage: BD433
Datasheet: BD13910S , BD13910STU , BD13916S , BD13916STU , BD1396STU , BD14010STU , BD14016S , BD14016STU , 2SC4793 , BD435S , BD435STU , BD437S , BD787G , BD788G , BF720T3G , BU406TU , EMX2DXV6T5 .
History: 2G374
Keywords - BD433S transistor datasheet
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History: 2G374



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