EMX2DXV6T5 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

EMX2DXV6T5 Specs and Replacement

Type Designator: EMX2DXV6T5

SMD Transistor Code: 3R

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.357 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 180 MHz

Collector Capacitance (Cc): 2 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: SOT563

EMX2DXV6T5 Substitution

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EMX2DXV6T5 datasheet

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DATA SHEET www.onsemi.com Dual NPN General Purpose DUAL NPN GENERAL PURPOSE AMPLIFIER Amplifier Transistor TRANSISTORS SURFACE MOUNT EMX2DXV6T5 This NPN transistor is designed for general purpose amplifier (3) (2) (1) applications. This device is housed in the SOT-563 package which is designed for low power surface mount applications, where board space is at a premium. Features Q2... See More ⇒

0.1. Size:121K onsemi

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EMX2DXV6T5 Preferred Devices Dual NPN General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-563 package which is designed for low power surface mount applications, where board http //onsemi.com space is at a premium. Features DUAL NPN GENERAL Reduces Board Space PURPOSE AMPLIFIER Hig... See More ⇒

0.2. Size:121K onsemi

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