All Transistors. FJP13007H1TU Datasheet

 

FJP13007H1TU Datasheet, Equivalent, Cross Reference Search


   Type Designator: FJP13007H1TU
   SMD Transistor Code: J13007-1
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 80 W
   Maximum Collector-Base Voltage |Vcb|: 700 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 4 MHz
   Collector Capacitance (Cc): 110 pF
   Forward Current Transfer Ratio (hFE), MIN: 8
   Noise Figure, dB: -
   Package: TO220

 FJP13007H1TU Transistor Equivalent Substitute - Cross-Reference Search

   

FJP13007H1TU Datasheet (PDF)

 ..1. Size:246K  onsemi
fjp13007tu fjp13007h1tu fjp13007h1tu-f080 fjp13007h2tu fjp13007h2tu-f080.pdf

FJP13007H1TU
FJP13007H1TU

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

 6.1. Size:540K  fairchild semi
fjp13007.pdf

FJP13007H1TU
FJP13007H1TU

July 2008FJP13007High Voltage Fast-Switching NPN Power TransistorHigh Voltage High Speed Power Switch Application High Voltage Capability High Switching Speed Suitable for Electronic Ballast and Switching Mode Power SupplyTO-22011.Base 2.Collector 3.EmitterAbsolute Maximum Ratings TC = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base

 7.1. Size:181K  fairchild semi
fjp13009.pdf

FJP13007H1TU
FJP13007H1TU

March 2007FJP13009High Voltage Fast-Switching NPN Power Transistor High Voltage Capability High Switching Speed Suitable for Electronic Ballast and Switching Mode Power SupplyTO-22011.Base 2.Collector 3.EmitterAbsolute Maximum Ratings* TC = 25C unless otherwise noted (notes_1)Symbol Parameter Value UnitsVCBO Collector-Base Voltage 700 VVCEO Collector-Emitter

 7.2. Size:283K  onsemi
fjp13009tu fjp13009h2tu.pdf

FJP13007H1TU
FJP13007H1TU

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.3. Size:232K  inchange semiconductor
fjp13009.pdf

FJP13007H1TU
FJP13007H1TU

isc Silicon NPN Power Transistor FJP13009DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Collector Saturation Voltage: V = 1.5 (Max) @ I = 8.0ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage, high-speed, power swit-ching in inductive circuit, they are p

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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