All Transistors. FJT44TF Datasheet

 

FJT44TF Datasheet and Replacement


   Type Designator: FJT44TF
   SMD Transistor Code: FJT44
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 2 W
   Maximum Collector-Base Voltage |Vcb|: 500 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 7 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: SOT223
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FJT44TF Datasheet (PDF)

 ..1. Size:322K  onsemi
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FJT44TF

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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FJT44TF

December 2009FJT44NPN Epitaxial Silicon TransistorFeatures High Voltage Transistor 321SOT-2231. Base 2. Collector 3. EmitterAbsolute Maximum Ratings* TA=25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 500 VVCEO Collector-Emitter Voltage 400 VVEBO Emitter-Base Voltage 6 VIC Collector Current 300 mAPC Collector Dissipation (TA

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: 2SD1007HR | DRC9143X | BDY12B | BCW11L | KT208I | ED1602D | SFE245

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