2SA1222 Specs and Replacement
Type Designator: 2SA1222
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 160
Noise Figure, dB: -
Package: SP-8
- BJT ⓘ Cross-Reference Search
2SA1222 datasheet
..1. Size:85K nec
2sa1221 2sa1222.pdf 
DATA SHEET SILICON TRANSISTORS 2SA1221, 1222 PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS FEATURES PACKAGE DRAWING (UNIT mm) Ideal for use of high withstanding voltage current such as TV vertical deflection output, audio output, and variable power supplies. Complementary transistor with 2SC2958 and 2SC2959 VCEO = 140 V 2SA1221/2SC2958 VCEO = 160 V 2S... See More ⇒
8.1. Size:136K toshiba
2sa1225.pdf
2SA1225 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1225 Power Amplifier Applications Unit mm Driver Stage Amplifier Applications High transition frequency fT = 100 MHz (typ.) Complementary to 2SC2983 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -160 V Collector-emitter voltage VCEO -160 V Emitter-... See More ⇒
8.5. Size:1433K jiangsu
2sa1225.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SA1225 TRANSISTOR (PNP) TO-252-2L FEATURES 1. BASE High Transition Frequency Complementary to 2SC2983 2. COLLECTOR 3 .EMITTER APPLICATIONS Power Amplifier Applications Driver Stage Amplifier Applications Equivalent Circuit A1225=Device code A1225 Solid dot=Gre... See More ⇒
8.6. Size:160K jmnic
2sa1227 2sa1227a.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1227 2SA1227A DESCRIPTION With TO-3PFa package Complement to type 2SC2987/2987A High power dissipation APPLICATIONS For use in audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT ... See More ⇒
8.7. Size:189K jmnic
2sa1220 2sa1220a.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1220 2SA1220A DESCRIPTION With TO-126 package Complement to type 2SC2690/2690A APPLICATIONS Audio frequency power amplifier High frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITION... See More ⇒
8.8. Size:916K kexin
2sa1226.pdf
SMD Type Transistors PNP Transistors 2SA1226 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=-30mA 1 2 Collector Emitter Voltage VCEO=-40V +0.1 +0.05 0.95 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Col... See More ⇒
8.9. Size:114K inchange semiconductor
2sa1227 2sa1227a.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1227 2SA1227A DESCRIPTION With TO-3PFa package Complement to type 2SC2987/2987A High power dissipation APPLICATIONS For use in audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDI... See More ⇒
8.10. Size:134K inchange semiconductor
2sa1220 a.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SA1220/A DESCRIPTION Good Linearity of hFE High Collector-Emitter Breakdown Voltage- V(BR)CEO= -120V(Min)-2SA1220 = -160V(Min)-2SA1220A Complement to Type 2SC2690/A APPLICATIONS Adudio frequency power amplifier High frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25 ) ... See More ⇒
8.11. Size:222K inchange semiconductor
2sa1227.pdf
isc Silicon PNP Power Transistor 2SA1227 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -140V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC2987 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN... See More ⇒
8.12. Size:184K inchange semiconductor
2sa1225.pdf
isc Silicon PNP Power Transistor 2SA1225 DESCRIPTION High transition frequency 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation Complementary to 2SC2983 APPLICATIONS Power amplifier applications Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vol... See More ⇒
8.13. Size:224K inchange semiconductor
2sa1227a.pdf
isc Silicon PNP Power Transistor 2SA1227A DESCRIPTION Collector-Emitter Breakdown Voltage- V = -160V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC2987A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE ... See More ⇒
8.14. Size:214K inchange semiconductor
2sa1220 2sa1220a.pdf
isc Silicon PNP Power Transistors 2SA1220/A DESCRIPTION Good Linearity of h FE High Collector-Emitter Breakdown Voltage- V = -120V(Min)-2SA1220 (BR)CEO = -160V(Min)-2SA1220A Complement to Type 2SC2690/A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Adudio frequency power amplifier High frequency power amplifier ABSOLU... See More ⇒
Detailed specifications: 2SA1216Y, 2SA1217, 2SA1218, 2SA1219, 2SA122, 2SA1220, 2SA1220A, 2SA1221, BC556, 2SA1223, 2SA1224, 2SA1225, 2SA1226, 2SA1227, 2SA1227A, 2SA1228, 2SA1229
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