All Transistors. NJVMJB44H11 Datasheet

 

NJVMJB44H11 Datasheet, Equivalent, Cross Reference Search


   Type Designator: NJVMJB44H11
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 50 MHz
   Collector Capacitance (Cc): 130 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: D2PAK

 NJVMJB44H11 Transistor Equivalent Substitute - Cross-Reference Search

   

NJVMJB44H11 Datasheet (PDF)

 ..1. Size:113K  onsemi
njvmjb44h11 njvmjb45h11.pdf

NJVMJB44H11
NJVMJB44H11

MJB44H11 (NPN),NJVMJB44H11 (NPN),MJB45H11 (PNP),NJVMJB45H11 (PNP)Complementaryhttp://onsemi.comPower TransistorsSILICON POWERD2PAK for Surface MountTRANSISTORSComplementary power transistors are for general purpose power10 AMPERES,amplification and switching such as output or driver stages in80 VOLTS, 50 WATTSapplications such as switching regulators, converters and

 ..2. Size:109K  onsemi
mjb44h11 njvmjb44h11 mjb45h11 njvmjb45h11.pdf

NJVMJB44H11
NJVMJB44H11

MJB44H11 (NPN),NJVMJB44H11 (NPN),MJB45H11 (PNP),NJVMJB45H11 (PNP)Complementaryhttp://onsemi.comPower TransistorsSILICON POWERD2PAK for Surface MountTRANSISTORSComplementary power transistors are for general purpose power10 AMPERES,amplification and switching such as output or driver stages in80 VOLTS, 50 WATTSapplications such as switching regulators, converters and

 7.1. Size:126K  onsemi
mjb41c njvmjb41ct4g mjb42c njvmjb42ct4g.pdf

NJVMJB44H11
NJVMJB44H11

MJB41C,NJVMJB41CT4G (NPN),MJB42C,NJVMJB42CT4G (PNP)Complementary SiliconPlastic Power Transistors http://onsemi.comD2PAK for Surface MountCOMPLEMENTARY SILICONPOWER TRANSISTORSFeatures6 AMPERES, Lead Formed for Surface Mount Applications in Plastic Sleeves(No Suffix)100 VOLTS, 65 WATTS Electrically the Same as TIP41 and T1P42 SeriesMARKING NJV Prefix for

 7.2. Size:131K  onsemi
njvmjb41ct4g njvmjb42ct4g.pdf

NJVMJB44H11
NJVMJB44H11

MJB41C,NJVMJB41CT4G (NPN),MJB42C,NJVMJB42CT4G (PNP)Complementary SiliconPlastic Power Transistors http://onsemi.comD2PAK for Surface MountCOMPLEMENTARY SILICONPOWER TRANSISTORSFeatures6 AMPERES, Lead Formed for Surface Mount Applications in Plastic Sleeves(No Suffix)100 VOLTS, 65 WATTS Electrically the Same as TIP41 and T1P42 SeriesMARKING NJV Prefix for

 9.1. Size:153K  onsemi
njvmjd112 njvmjd117.pdf

NJVMJB44H11
NJVMJB44H11

MJD112 (NPN),MJD117 (PNP)Complementary DarlingtonPower TransistorsDPAK For Surface Mount Applicationshttp://onsemi.comDesigned for general purpose power and switching such as output ordriver stages in applications such as switching regulators, converters,SILICONand power amplifiers.POWER TRANSISTORSFeatures2 AMPERES Lead Formed for Surface Mount Applications in Plas

 9.2. Size:115K  onsemi
njvmjd44e3.pdf

NJVMJB44H11
NJVMJB44H11

MJD44E3,NJVMJD44E3T4GDarlington Power TransistorDPAK For Surface Mount ApplicationsDesigned for general purpose power and switching output or driverhttp://onsemi.comstages in applications such as switching regulators, converters, andpower amplifiers.NPN DARLINGTON SILICONFeaturesPOWER TRANSISTORS Electrically Similar to Popular D44E3 Device10 AMPERES High DC Gain

 9.3. Size:79K  onsemi
njvmjd47t4g njvmjd50t4g.pdf

NJVMJB44H11
NJVMJB44H11

MJD47, NJVMJD47T4G,MJD50, NJVMJD50T4GHigh Voltage PowerTransistorsDPAK for Surface Mount Applicationshttp://onsemi.comDesigned for line operated audio output amplifier, switchmode supplydrivers and other switching applications.NPN SILICON POWERFeaturesTRANSISTORS Lead Formed for Surface Mount Applications in Plastic Sleeves1 AMPERE(No Suffix)250, 400 VOLTS, 15 WAT

 9.4. Size:173K  onsemi
njvmjd41c njvmjd42c.pdf

NJVMJB44H11
NJVMJB44H11

MJD41C,NJVMJD41CT4G (NPN),MJD42C,NJVMJD42CT4G,NJVMJD42CRLG (PNP)http://onsemi.comComplementary PowerTransistorsSILICONDPAK For Surface Mount Applications POWER TRANSISTORS6 AMPERESDesigned for general purpose amplifier and low speed switching100 VOLTS, 20 WATTSapplications.Features Lead Formed for Surface Mount Applications in Plastic Sleeves(No Suffix) S

 9.5. Size:148K  onsemi
njvmjd148.pdf

NJVMJB44H11
NJVMJB44H11

MJD148, NJVMJD148T4GNPN Silicon PowerTransistorDPAK For Surface Mount ApplicationsDesigned for general purpose amplifier and low speed switchinghttp://onsemi.comapplications.FeaturesPOWER TRANSISTOR High Gain - 50 Min @ IC = 2.0 A4.0 AMPERES Low Saturation Voltage - 0.5 V @ IC = 2.0 A45 VOLTS, 20 WATTS High Current Gain - Bandwidth Product - fT = 3.0 MHz Min @

 9.6. Size:135K  onsemi
mjd31 njvmjd31t4g mjd31c njvmjd31ct4g mjd32 njvmjd32t4g mjd32c njvmjd32cg njvmjd32ct4g.pdf

NJVMJB44H11
NJVMJB44H11

MJD31, NJVMJD31T4G,MJD31C, NJVMJD31CT4G(NPN), MJD32,NJVMJD32T4G, MJD32C,NJVMJD32CG,NJVMJD32CT4G (PNP)http://onsemi.comComplementary PowerSILICONPOWER TRANSISTORSTransistors3 AMPERESDPAK For Surface Mount Applications40 AND 100 VOLTS15 WATTSDesigned for general purpose amplifier and low speed switchingapplications.COMPLEMENTARYFeaturesCOLLECTOR COLLECTOR

 9.7. Size:140K  onsemi
njvmjd31 njvmjd32.pdf

NJVMJB44H11
NJVMJB44H11

MJD31, NJVMJD31T4G,MJD31C, NJVMJD31CT4G(NPN), MJD32,NJVMJD32T4G, MJD32C,NJVMJD32CG,NJVMJD32CT4G (PNP)http://onsemi.comComplementary PowerSILICONPOWER TRANSISTORSTransistors3 AMPERESDPAK For Surface Mount Applications40 AND 100 VOLTS15 WATTSDesigned for general purpose amplifier and low speed switchingapplications.COMPLEMENTARYFeaturesCOLLECTOR COLLECTOR

 9.8. Size:178K  onsemi
njvmjd6039t4g.pdf

NJVMJB44H11
NJVMJB44H11

MJD6039, NJVMJD6039T4GDarlington PowerTransistorsDPAK For Surface Mount ApplicationsDesigned for general purpose power and switching such as output orhttp://onsemi.comdriver stages in applications such as switching regulators, convertors,and power amplifiers.SILICON FeaturesPOWER TRANSISTORS Lead Formed for Surface Mount Applications in Plastic Sleeves 4 AMPERES,(No S

 9.9. Size:142K  onsemi
njvmjd122 njvmjd127.pdf

NJVMJB44H11
NJVMJB44H11

MJD122, NJVMJD122(NPN), MJD127,NJVMJD127 (PNP)Complementary DarlingtonPower Transistorhttp://onsemi.comDPAK For Surface Mount ApplicationsSILICONDesigned for general purpose amplifier and low speed switchingPOWER TRANSISTORapplications.8 AMPERES100 VOLTS, 20 WATTSFeatures Lead Formed for Surface Mount Applications in Plastic Sleeves Surface Mount Replacements

 9.10. Size:200K  onsemi
njvmjd243 njvmjd253.pdf

NJVMJB44H11
NJVMJB44H11

MJD243,NJVMJD243T4G (NPN),MJD253,NJVMJD253T4G (PNP)Complementary Siliconhttp://onsemi.comPlastic Power TransistorDPAK-3 for Surface Mount Applications4.0 A, 100 V, 12.5 WPOWER TRANSISTORDesigned for low voltage, low-power, high-gain audio amplifierapplications.Features Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min) @ IC= 10 mAdc High DC Cu

 9.11. Size:172K  onsemi
njvmjd340 njvmjd350.pdf

NJVMJB44H11
NJVMJB44H11

MJD340,NJVMJD340T4G (NPN),MJD350,NJVMJD350T4G (PNP)High Voltage Powerhttp://onsemi.comTransistorsDPAK For Surface Mount ApplicationsSILICONDesigned for line operated audio output amplifier, switchmodePOWER TRANSISTORSpower supply drivers and other switching applications.0.5 AMPEREFeatures300 VOLTS, 15 WATTS Lead Formed for Surface Mount Applications in Plastic S

 9.12. Size:175K  onsemi
njvmjd128.pdf

NJVMJB44H11
NJVMJB44H11

MJD128T4G,NJVMJD128T4G (PNP)Complementary DarlingtonPower TransistorDPAK For Surface Mount ApplicationsDesigned for general purpose amplifier and low speed switchinghttp://onsemi.comapplications.SILICONFeaturesPOWER TRANSISTOR Monolithic Construction With Built-in Base-Emitter Shunt Resistors High DC Current Gain: hFE = 2500 (Typ) @ IC = 4.0 Adc8 AMPERES Epo

 9.13. Size:128K  onsemi
njvmjd2955 njvmjd3055.pdf

NJVMJB44H11
NJVMJB44H11

MJD2955 (PNP),MJD3055 (NPN)Complementary PowerTransistorsDPAK for Surface Mount Applicationshttp://onsemi.comDesigned for general purpose amplifier and low speed switchingapplications.SILICONFeatures POWER TRANSISTORS10 AMPERES Lead Formed for Surface Mount Applications in Plastic Sleeves(No Suffix)60 VOLTS, 20 WATTS Straight Lead Version in Plastic Sleeves (

 9.14. Size:142K  onsemi
njvmjd210 mjd200.pdf

NJVMJB44H11
NJVMJB44H11

MJD200 (NPN),MJD210 (PNP)Complementary PlasticPower TransistorsNPN/PNP Silicon DPAK For Surfacehttp://onsemi.comMount ApplicationsDesigned for low voltage, low-power, high-gain audioSILICONamplifier applications.POWER TRANSISTORSFeatures5 AMPERES High DC Current Gain25 VOLTS, 12.5 WATTS Lead Formed for Surface Mount Applications in Plastic Sleeves(No Suffix

 9.15. Size:148K  onsemi
njvmjd44h11 njvmjd45h11.pdf

NJVMJB44H11
NJVMJB44H11

MJD44H11,NJVMJD44H11 (NPN)MJD45H11,NJVMJD45H11 (PNP)Complementary Powerhttp://onsemi.comTransistorsDPAK For Surface Mount Applications SILICONPOWER TRANSISTORSDesigned for general purpose power and switching such as output or8 AMPERESdriver stages in applications such as switching regulators, converters,80 VOLTS, 20 WATTSand power amplifiers.FeaturesMARKING Le

 9.16. Size:157K  onsemi
mjd47 njvmjd47t4g mjd50 njvmjd50t4g.pdf

NJVMJB44H11
NJVMJB44H11

MJD47, NJVMJD47T4G,MJD50, NJVMJD50T4GHigh Voltage PowerTransistorsDPAK for Surface Mount Applicationshttp://onsemi.comDesigned for line operated audio output amplifier, switchmode supplydrivers and other switching applications.NPN SILICON POWERFeaturesTRANSISTORS Lead Formed for Surface Mount Applications in Plastic Sleeves1 AMPERE(No Suffix)250, 400 VOLTS, 15 WAT

 9.17. Size:132K  onsemi
njvmjd31ct4g-vf01 njvmjd32ct4g-vf01.pdf

NJVMJB44H11
NJVMJB44H11

NJVMJD3xxT4G-VF01Complementary PowerTransistorsDPAK For Surface Mount ApplicationsDesigned for general purpose amplifier and low speed switchingwww.onsemi.comapplications.FeaturesSILICON Lead Formed for Surface Mount Applications in Plastic SleevesPOWER TRANSISTORS Straight Lead Version in Plastic Sleeves (1 Suffix)3 AMPERES Lead Formed Version in 16 mm

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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