All Transistors. NSS40300MZ4 Datasheet

 

NSS40300MZ4 Datasheet and Replacement


   Type Designator: NSS40300MZ4
   SMD Transistor Code: 40300
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 2 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 160 MHz
   Collector Capacitance (Cc): 40 pF
   Forward Current Transfer Ratio (hFE), MIN: 175
   Noise Figure, dB: -
   Package: SOT223
 

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NSS40300MZ4 Datasheet (PDF)

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NSS40300MZ4

NSS40300MZ4Bipolar Power Transistors40 V, 3.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturation http://onsemi.comvoltage (VCE(sat)) and high current gain capability. These are designedfor use in low voltage, high speed switching applications where PNP TRANSISTORaffordable effic

 0.1. Size:89K  onsemi
nss40300mz4t1g.pdf pdf_icon

NSS40300MZ4

NSS40300MZ4Bipolar Power Transistors40 V, 3.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturation http://onsemi.comvoltage (VCE(sat)) and high current gain capability. These are designedfor use in low voltage, high speed switching applications where PNP TRANSISTORaffordable effic

 0.2. Size:89K  onsemi
nss40300mz4t3g.pdf pdf_icon

NSS40300MZ4

NSS40300MZ4Bipolar Power Transistors40 V, 3.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturation http://onsemi.comvoltage (VCE(sat)) and high current gain capability. These are designedfor use in low voltage, high speed switching applications where PNP TRANSISTORaffordable effic

 5.1. Size:106K  onsemi
nss40300md.pdf pdf_icon

NSS40300MZ4

NSS40300MDR2GDual Matched 40 V, 6.0 A,Low VCE(sat) PNP TransistorThese transistors are part of the ON Semiconductor e2PowerEdgefamily of Low VCE(sat) transistors. They are assembled to create a pairof devices highly matched in all parameters, including ultra lowsaturation voltage VCE(sat), high current gain and Base/Emitter turn on http://onsemi.comvoltage.40 VOLTSTypical appl

Datasheet: NJV4030P , NJVMJB44H11 , NJVMJB45H11 , NJVMJD31CT4G-VF01 , NJVMJD32CT4G-VF01 , NSB4904DW1T2G , NSS1C200MZ4 , NSS20200DMT , TIP122 , NSS40301MZ4 , NSS60101DMR6 , NSS60200DMT , NSS60200L , NSS60201SMT , NSS60600MZ4 , NST1601CL , NST3904MX2 .

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