All Transistors. NST3906DXV6T1 Datasheet

 

NST3906DXV6T1 Datasheet, Equivalent, Cross Reference Search


   Type Designator: NST3906DXV6T1
   SMD Transistor Code: A2*
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.357 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 4.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT563

 NST3906DXV6T1 Transistor Equivalent Substitute - Cross-Reference Search

   

NST3906DXV6T1 Datasheet (PDF)

 ..1. Size:172K  onsemi
nst3906dxv6t1 nst3906dxv6t5.pdf

NST3906DXV6T1
NST3906DXV6T1

NST3906DXV6T1,NST3906DXV6T5Dual General PurposeTransistorThe NST3906DXV6T1 device is a spin- off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT- 563six-leaded surface mount package. By putting two discrete devices in(3) (2) (1)one package, this device is ideal for low-power

 0.1. Size:96K  onsemi
nst3906dxv6t1-5.pdf

NST3906DXV6T1
NST3906DXV6T1

NST3906DXV6T1,NST3906DXV6T5Dual General PurposeTransistorThe NST3906DXV6T1 device is a spin- off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT- 563six-leaded surface mount package. By putting two discrete devices in(3) (2) (1)one package, this device is ideal for low-power

 0.2. Size:96K  onsemi
nst3906dxv6t1g.pdf

NST3906DXV6T1
NST3906DXV6T1

NST3906DXV6T1,NST3906DXV6T5Dual General PurposeTransistorThe NST3906DXV6T1 device is a spin- off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT- 563six-leaded surface mount package. By putting two discrete devices in(3) (2) (1)one package, this device is ideal for low-power

 6.1. Size:96K  onsemi
nst3906dp6.pdf

NST3906DXV6T1
NST3906DXV6T1

NST3906DP6T5GDual General PurposeTransistorThe NST3906DP6T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-963six-leaded surface mount package. By putting two discrete devices inone package, this device is ideal for low-power surface mounthttp://onsemi.comapplicat

 6.2. Size:96K  onsemi
nst3906dp6t5g.pdf

NST3906DXV6T1
NST3906DXV6T1

NST3906DP6T5GDual General PurposeTransistorThe NST3906DP6T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-963six-leaded surface mount package. By putting two discrete devices inone package, this device is ideal for low-power surface mounthttp://onsemi.comapplicat

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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