All Transistors. 2SA1227A Datasheet

 

2SA1227A Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SA1227A
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 120 W
   Maximum Collector-Base Voltage |Vcb|: 160 V
   Maximum Collector Current |Ic max|: 12 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 60 MHz
   Collector Capacitance (Cc): 12 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: X104-1

 2SA1227A Transistor Equivalent Substitute - Cross-Reference Search

   

2SA1227A Datasheet (PDF)

 ..1. Size:30K  no
2sa1227 2sa1227a 2sc2987a.pdf

2SA1227A

 ..2. Size:160K  jmnic
2sa1227 2sa1227a.pdf

2SA1227A 2SA1227A

JMnic Product Specification Silicon PNP Power Transistors 2SA1227 2SA1227A DESCRIPTION With TO-3PFa package Complement to type 2SC2987/2987A High power dissipation APPLICATIONS For use in audio frequency power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT

 ..3. Size:114K  inchange semiconductor
2sa1227 2sa1227a.pdf

2SA1227A 2SA1227A

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1227 2SA1227A DESCRIPTION With TO-3PFa package Complement to type 2SC2987/2987A High power dissipation APPLICATIONS For use in audio frequency power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDI

 ..4. Size:224K  inchange semiconductor
2sa1227a.pdf

2SA1227A 2SA1227A

isc Silicon PNP Power Transistor 2SA1227ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -160V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2987AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

 7.1. Size:222K  inchange semiconductor
2sa1227.pdf

2SA1227A 2SA1227A

isc Silicon PNP Power Transistor 2SA1227DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -140V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2987Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

 8.1. Size:136K  toshiba
2sa1225.pdf

2SA1227A 2SA1227A

2SA1225 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1225 Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications High transition frequency: fT = 100 MHz (typ.) Complementary to 2SC2983 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -160 VCollector-emitter voltage VCEO -160 VEmitter-

 8.2. Size:85K  nec
2sa1221 2sa1222.pdf

2SA1227A 2SA1227A

DATA SHEETSILICON TRANSISTORS2SA1221, 1222PNP SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERSFEATURES PACKAGE DRAWING (UNIT: mm) Ideal for use of high withstanding voltage current such as TVvertical deflection output, audio output, and variable powersupplies. Complementary transistor with 2SC2958 and 2SC2959VCEO = 140 V: 2SA1221/2SC2958VCEO = 160 V: 2S

 8.3. Size:183K  nec
2sa1226.pdf

2SA1227A 2SA1227A

 8.4. Size:35K  no
2sa1220 2sa1220a 2sc2690a.pdf

2SA1227A

 8.5. Size:1433K  jiangsu
2sa1225.pdf

2SA1227A 2SA1227A

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors2SA1225 TRANSISTOR (PNP)TO-252-2L FEATURES 1. BASE High Transition Frequency Complementary to 2SC29832. COLLECTOR 3 .EMITTER APPLICATIONS Power Amplifier Applications Driver Stage Amplifier Applications Equivalent Circuit A1225=Device code A1225Solid dot=Gre

 8.6. Size:189K  jmnic
2sa1220 2sa1220a.pdf

2SA1227A 2SA1227A

JMnic Product Specification Silicon PNP Power Transistors 2SA1220 2SA1220A DESCRIPTION With TO-126 package Complement to type 2SC2690/2690A APPLICATIONS Audio frequency power amplifier High frequency power amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITION

 8.7. Size:916K  kexin
2sa1226.pdf

2SA1227A 2SA1227A

SMD Type TransistorsPNP Transistors2SA1226SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=-30mA1 2 Collector Emitter Voltage VCEO=-40V+0.1+0.050.95 -0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Col

 8.8. Size:134K  inchange semiconductor
2sa1220 a.pdf

2SA1227A 2SA1227A

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SA1220/A DESCRIPTION Good Linearity of hFEHigh Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min)-2SA1220 = -160V(Min)-2SA1220A Complement to Type 2SC2690/A APPLICATIONS Adudio frequency power amplifier High frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25)

 8.9. Size:184K  inchange semiconductor
2sa1225.pdf

2SA1227A 2SA1227A

isc Silicon PNP Power Transistor 2SA1225DESCRIPTIONHigh transition frequency100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationComplementary to 2SC2983APPLICATIONSPower amplifier applicationsDriver stage amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol

 8.10. Size:214K  inchange semiconductor
2sa1220 2sa1220a.pdf

2SA1227A 2SA1227A

isc Silicon PNP Power Transistors 2SA1220/ADESCRIPTIONGood Linearity of hFEHigh Collector-Emitter Breakdown Voltage-: V = -120V(Min)-2SA1220(BR)CEO= -160V(Min)-2SA1220AComplement to Type 2SC2690/AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAdudio frequency power amplifierHigh frequency power amplifierABSOLU

Datasheet: 2SA1220A , 2SA1221 , 2SA1222 , 2SA1223 , 2SA1224 , 2SA1225 , 2SA1226 , 2SA1227 , 2SC2655 , 2SA1228 , 2SA1229 , 2SA123 , 2SA1230 , 2SA1231 , 2SA1232 , 2SA1233 , 2SA1235 .

 

 
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