All Transistors. 2SA1228 Datasheet

 

2SA1228 Datasheet and Replacement


   Type Designator: 2SA1228
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.05 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 4000 MHz
   Collector Capacitance (Cc): 0.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO72
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2SA1228 Datasheet (PDF)

 8.1. Size:136K  toshiba
2sa1225.pdf pdf_icon

2SA1228

2SA1225 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1225 Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications High transition frequency: fT = 100 MHz (typ.) Complementary to 2SC2983 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -160 VCollector-emitter voltage VCEO -160 VEmitter-

 8.2. Size:85K  nec
2sa1221 2sa1222.pdf pdf_icon

2SA1228

DATA SHEETSILICON TRANSISTORS2SA1221, 1222PNP SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERSFEATURES PACKAGE DRAWING (UNIT: mm) Ideal for use of high withstanding voltage current such as TVvertical deflection output, audio output, and variable powersupplies. Complementary transistor with 2SC2958 and 2SC2959VCEO = 140 V: 2SA1221/2SC2958VCEO = 160 V: 2S

 8.3. Size:183K  nec
2sa1226.pdf pdf_icon

2SA1228

 8.4. Size:30K  no
2sa1227 2sa1227a 2sc2987a.pdf pdf_icon

2SA1228

Datasheet: 2SA1221 , 2SA1222 , 2SA1223 , 2SA1224 , 2SA1225 , 2SA1226 , 2SA1227 , 2SA1227A , 2SA1015 , 2SA1229 , 2SA123 , 2SA1230 , 2SA1231 , 2SA1232 , 2SA1233 , 2SA1235 , 2SA1236 .

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