All Transistors. 2SA1229 Datasheet

 

2SA1229 Datasheet and Replacement


   Type Designator: 2SA1229
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.05 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 4000 MHz
   Collector Capacitance (Cc): 0.6 pF
   Forward Current Transfer Ratio (hFE), MIN: 90
   Noise Figure, dB: -
   Package: TO71-2
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2SA1229 Datasheet (PDF)

 8.1. Size:136K  toshiba
2sa1225.pdf pdf_icon

2SA1229

2SA1225 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1225 Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications High transition frequency: fT = 100 MHz (typ.) Complementary to 2SC2983 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -160 VCollector-emitter voltage VCEO -160 VEmitter-

 8.2. Size:85K  nec
2sa1221 2sa1222.pdf pdf_icon

2SA1229

DATA SHEETSILICON TRANSISTORS2SA1221, 1222PNP SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERSFEATURES PACKAGE DRAWING (UNIT: mm) Ideal for use of high withstanding voltage current such as TVvertical deflection output, audio output, and variable powersupplies. Complementary transistor with 2SC2958 and 2SC2959VCEO = 140 V: 2SA1221/2SC2958VCEO = 160 V: 2S

 8.3. Size:183K  nec
2sa1226.pdf pdf_icon

2SA1229

 8.4. Size:30K  no
2sa1227 2sa1227a 2sc2987a.pdf pdf_icon

2SA1229

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BUV47 | 181T2A | 2S305 | 2SC1290 | 2C3960 | BSS82BL | GA53233

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