SBC847BPDXV6 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

SBC847BPDXV6 Specs and Replacement

Type Designator: SBC847BPDXV6

SMD Transistor Code: 4F*

Material of Transistor: Si

Polarity: NPN*PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.357 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 4.5 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: SOT563

SBC847BPDXV6 Substitution

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SBC847BPDXV6 datasheet

..1. Size:110K onsemi

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BC847BPDXV6, SBC847BPDXV6 NPN/PNP Dual General Purpose Transistor This transistor is designed for general purpose amplifier applications. It is housed in the SOT-563 which is designed for low http //onsemi.com power surface mount applications. Features (3) (2) (1) S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualif... See More ⇒

0.1. Size:114K onsemi

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5.1. Size:177K onsemi

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BC846BPDW1, BC847BPDW1, BC848CPDW1 Series Dual General Purpose Transistors http //onsemi.com NPN/PNP Duals (Complementary) These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is SOT-363 designed for low power surface mount applications. CASE 419B STYLE 1 Features (3) (2) (1) S Prefix for Automotive and Other Ap... See More ⇒

5.2. Size:177K onsemi

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