TIP29BG
Datasheet, Equivalent, Cross Reference Search
Type Designator: TIP29BG
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30
W
Maximum Collector-Base Voltage |Vcb|: 80
V
Maximum Collector-Emitter Voltage |Vce|: 80
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 3
MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package:
TO220
TIP29BG
Transistor Equivalent Substitute - Cross-Reference Search
TIP29BG
Datasheet (PDF)
..1. Size:268K onsemi
tip29g tip29ag tip29bg tip29cg tip30g tip30ag tip30bg tip30cg.pdf
TIP29, A, B, C (NPN),TIP30, A, B, C (PNP)Complementary SiliconPlastic Power TransistorsDesigned for use in general purpose amplifier and switchingapplications. Compact TO-220 package.www.onsemi.comFeatures1 AMPERE These Devices are Pb-Free and are RoHS Compliant*POWER TRANSISTORSMAXIMUM RATINGS COMPLEMENTARY SILICONRating Symbol Value Unit 40, 60, 80, 100 VOLTS, Col
8.1. Size:137K motorola
tip29bre.pdf
Order this documentMOTOROLAby TIP29B/DSEMICONDUCTOR TECHNICAL DATANPNTIP29BComplementary Silicon PlasticTIP29CPower TransistorsPNP. . . designed for use in general purpose amplifier and switching applications.TIP30BCompact TO220 AB package.
8.2. Size:105K onsemi
tip29 tip29a tip29b tip29c tip30 tip30a tip30b tip30c.pdf
TIP29, A, B, C (NPN),TIP30, A, B, C (PNP)Complementary SiliconPlastic Power TransistorsDesigned for use in general purpose amplifier and switchingapplications. Compact TO-220 package.www.onsemi.comFeatures1 AMPERE These Devices are Pb-Free and are RoHS Compliant*POWER TRANSISTORSMAXIMUM RATINGS COMPLEMENTARY SILICONRating Symbol Value Unit 40, 60, 80, 100 VOLTS, Col
8.3. Size:209K inchange semiconductor
tip29b.pdf
isc Silicon NPN Power Transistors TIP29BDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Collector-Emitter Saturation Voltage-: V = 0.7V(Max.)@I = 1.0ACE(sat) CComplement to Type TIP30BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and switchingapp
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