All Transistors. 2SA1233 Datasheet

 

2SA1233 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SA1233
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 400 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Collector Capacitance (Cc): 45 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO202

 2SA1233 Transistor Equivalent Substitute - Cross-Reference Search

   

2SA1233 Datasheet (PDF)

 8.1. Size:382K  sanyo
2sa1237.pdf

2SA1233
2SA1233

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 8.2. Size:354K  sanyo
2sa1239.pdf

2SA1233
2SA1233

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 8.3. Size:438K  sanyo
2sa1238.pdf

2SA1233
2SA1233

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 8.4. Size:28K  no
2sa1232 2sc3012 2sc3012.pdf

2SA1233

 8.5. Size:103K  secos
2sa1235a.pdf

2SA1233

2SA1235A -0.2A , -60V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES Low Collector Current A Low Collector Power Dissipation L33Top View C BCLASSIFICATION OF hFE (1) 11 22Product-Rank 2SA1235A-ME 2SA1235A-MF K ERange 150~300 250~500DMa

 8.6. Size:313K  hua-yuan
2sa1235a.pdf

2SA1233
2SA1233

DONG GUAN SHI HUA YUAN ELECTRON CO.,LTD. TEL 86-769-5335378 86-769-5305266 FEX 86-769-5316189 SOT-23 Plastic-Encapsulate Transistors SOT23 1. BASE 2SA1235A TRANSISTOR PNP 2. EMITTER 3. COLLECTOR FEATURES Power dissipation 2.4 PCM : 0.2 WTamb=25 1.3 Collector current ICM: -0.2 A Collector-base voltage V

 8.7. Size:748K  jiangsu
2sa1235a.pdf

2SA1233
2SA1233

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors2SA1235A TRANSISTOR (PNP)SOT23 FEATURES Low Collector Current Low Collector Power DissipationMAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASESymbol Parameter Value Unit 2. EMITTERV Collector-Base Voltage -60 V CBO3. COLLECTORV Collector-Emitter Voltage -50 V C

 8.8. Size:160K  jmnic
2sa1232.pdf

2SA1233
2SA1233

JMnic Product Specification Silicon PNP Power Transistors 2SA1232 DESCRIPTION With TO-3PFa package Complement to type 2SC3012 APPLICATIONS Audio frequency power amplifier. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitt

 8.9. Size:294K  htsemi
2sa1235a.pdf

2SA1233

2SA1 235ATRANSISTOR(PNP)SOT23 FEATURES Low Collector Current Low Collector Power Dissipation MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER VCBO Collector-Base Voltage -60 V 3. COLLECTOR V Collector-Emitter Voltage -50 V CEOV Emitter-Base Voltage -6 V EBOI Collector Current -200 mA CP Collector Powe

 8.10. Size:967K  lrc
l2sa1235flt1g.pdf

2SA1233
2SA1233

LESHAN RADIO COMPANY, LTD.General Purpose TransistorDESCRIPTION L2SA1365FLT1G is a mini package silicon PNP epitaxial transistor, L2SA1235FLT1Git is designed for low frequency voltage application.S-L2SA1235FLT1G . FEATURE Small collector to emitter saturation voltage. VCE(sat)=-0.3V max ( @I c=-100mA, I B=-10mA)3Excellent linearity of DC forward current gain.

 8.11. Size:1150K  kexin
2sa1235.pdf

2SA1233
2SA1233

SMD Type orSMD Type TransistICsPNP Transistors2SA1235SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13FeaturesSmall collector to emitter saturation voltage.1 2+0.1Excelent lineary DC forward current gain. +0.050.95-0.1 0.1-0.01+0.11.9-0.1Super mini package for easy mounting.1.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Un

 8.12. Size:196K  cn sptech
2sa1232r 2sa1452q 2sa1452p.pdf

2SA1233
2SA1233

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1232DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -130V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC3012APPLICATIONSFor audio frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -130 VCBOV Collector-

 8.13. Size:221K  inchange semiconductor
2sa1232.pdf

2SA1233
2SA1233

isc Silicon PNP Power Transistor 2SA1232DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -130V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC3012Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

Datasheet: 2SA1227 , 2SA1227A , 2SA1228 , 2SA1229 , 2SA123 , 2SA1230 , 2SA1231 , 2SA1232 , D667 , 2SA1235 , 2SA1236 , 2SA1237 , 2SA1237E , 2SA1237F , 2SA1237G , 2SA1238 , 2SA1238E .

 

 
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