UMC3NT2G Datasheet, Equivalent, Cross Reference Search
Type Designator: UMC3NT2G
SMD Transistor Code: U3*
Material of Transistor: Si
Polarity: Pre-Biased-NPN*PNP
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.15
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Forward Current Transfer Ratio (hFE), MIN: 35
Noise Figure, dB: -
Package: SOT353
UMC3NT2G Transistor Equivalent Substitute - Cross-Reference Search
UMC3NT2G Datasheet (PDF)
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LESHAN RADIO COMPANY, LTD.Dual Common Base-CollectorBias Resistor TransistorFeaturesLUMC3NT1G Pb-Free Packages are AvailableS-LUMC3NT1G Simplifies Circuit Design Reduces Board Space Reduces Component Count Pb-Free Package is Available. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualifi
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
