BC806-16W Datasheet, Equivalent, Cross Reference Search
Type Designator: BC806-16W
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 80 MHz
Collector Capacitance (Cc): 5 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT323
BC806-16W Transistor Equivalent Substitute - Cross-Reference Search
BC806-16W Datasheet (PDF)
bc806-16w bc806-25w.pdf
BC806W series80 V, 500 mA PNP general-purpose transistorsRev. 2 27 November 2019 Product data sheet1. General descriptionPNP general-purpose transistors in a very small SOT323 (SC-70) Surface-Mounted Device (SMD)plastic package.Table 1. Product overviewType number Package NPN complement:Nexperia JEITABC806-16W SOT323 SC-70 BC816-16WBC806-25W SOT323 SC-70 BC816-25W2. Fe
bc806-16 bc806-25.pdf
BC806 series80 V, 500 mA PNP general-purpose transistorsRev. 2 5 November 2019 Product data sheet1. General descriptionPNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD)plastic package.Table 1. Product overviewType number Package NPN complement:Nexperia JEDECBC806-16 SOT23 TO-236AB BC816-16BC806-25 SOT23 TO-236AB BC816-252. Feature
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