All Transistors. BC857RA Datasheet

 

BC857RA Datasheet, Equivalent, Cross Reference Search


   Type Designator: BC857RA
   SMD Transistor Code: A6
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.325 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SOT1268

 BC857RA Transistor Equivalent Substitute - Cross-Reference Search

   

BC857RA Datasheet (PDF)

 ..1. Size:234K  nxp
bc857ra.pdf

BC857RA
BC857RA

BC857RA45 V, 100 mA PNP/PNP general-purpose double transistors14 September 2018 Product data sheet1. General descriptionPNP/PNP general-purpose double transistors in a leadless ultra small DFN1412-6 (SOT1268)Surface-Mounted Device (SMD) plastic package.NPN/NPN complement: BC847RANPN/PNP complement: BC847RAPN2. Features and benefits Reduces component count Reduces pick

 9.1. Size:251K  motorola
bc856awt bc857awt bc858awt.pdf

BC857RA
BC857RA

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC856AWT1/DGeneral Purpose TransistorsBC856AWT1,BWT1PNP SiliconBC857AWT1,BWT1COLLECTOR BC858AWT1,BWT1,These transistors are designed for general purpose amplifier3applications. They are housed in the SOT323/SC70 which is CWT1designed for low power surface mount applications.1Motorola Preferred DevicesB

 9.2. Size:249K  motorola
bc856alt bc857alt bc858alt.pdf

BC857RA
BC857RA

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC856ALT1/DBC856ALT1,BLT1General Purpose TransistorsBC857ALT1,PNP SiliconCOLLECTORBLT1,CLT13BC858ALT1,BLT1,CLT11BASEMotorola Preferred Devices2EMITTERMAXIMUM RATINGSRating Symbol BC856 BC857 BC858 Unit3CollectorEmitter Voltage VCEO 65 45 30 V1CollectorBase Voltage VCBO 80

 9.3. Size:157K  philips
bc856w bc857w bc858w.pdf

BC857RA
BC857RA

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D102BC856W; BC857W; BC858WPNP general purpose transistorsProduct data sheet 2002 Feb 04Supersedes data of 1999 Apr 12NXP Semiconductors Product data sheetBC856W; BC857W; PNP general purpose transistorsBC858WFEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 65 V).1 base2 emitter

 9.4. Size:46K  philips
bc856f bc857f bc858f.pdf

BC857RA
BC857RA

DISCRETE SEMICONDUCTORSDATA SHEETM3D425BC856F; BC857F; BC858F seriesPNP general purpose transistors1999 May 21Preliminary specificationSupersedes data of 1998 Nov 10Philips Semiconductors Preliminary specificationPNP general purpose transistors BC856F; BC857F; BC858F seriesFEATURES PINNING Power dissipation comparable to SOT23PIN DESCRIPTION Low current (max. 10

 9.5. Size:78K  philips
bc856t bc857t series 3.pdf

BC857RA
BC857RA

DISCRETE SEMICONDUCTORSDATA SHEETM3D173BC856T; BC857T seriesPNP general purpose transistorsProduct specification 2000 Nov 15Supersedes data of 1999 Apr 26Philips Semiconductors Product specificationPNP general purpose transistors BC856T; BC857T seriesFEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 65 V).1 base2 emitterAPPLICATIONS

 9.6. Size:56K  philips
bc856w bc857w 3.pdf

BC857RA
BC857RA

DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D187BC856W; BC857WPNP general purpose transistors1999 Apr 12Product specificationSupersedes data of 1997 Apr 07Philips Semiconductors Product specificationPNP general purpose transistors BC856W; BC857WFEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 80)1 base S-mini package.

 9.7. Size:158K  philips
bc856 bc857 bc858.pdf

BC857RA
BC857RA

DISCRETE SEMICONDUCTORS DATA SHEETBC856; BC857; BC858PNP general purpose transistorsProduct data sheet 2004 Jan 16Supersedes data of 2003 Apr 09NXP Semiconductors Product data sheetPNP general purpose transistors BC856; BC857; BC858FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 65 V).1 base2 emitterAPPLICATIONS3 collector G

 9.8. Size:121K  philips
bc857bv.pdf

BC857RA
BC857RA

DISCRETE SEMICONDUCTORS DATA SHEETM3D744BC857BVPNP general purpose double transistorProduct data sheet 2001 Nov 07Supersedes data of 2001 Aug 10NXP Semiconductors Product data sheetPNP general purpose double transistor BC857BVFEATURES PINNING 300 mW total power dissipationPIN DESCRIPTION Very small 1.6 mm 1.2 mm 0.55 mm ultra thin 1, 4 emitter TR1; TR2

 9.9. Size:154K  philips
bc857m series.pdf

BC857RA
BC857RA

DISCRETE SEMICONDUCTORS DATA SHEETM3D883BOTTOM VIEWBC857M seriesPNP general purpose transistorsProduct data sheet 2004 Mar 10Supersedes data of 2003 Jul 15NXP Semiconductors Product data sheetPNP general purpose transistors BC857M seriesFEATURES QUICK REFERENCE DATA Leadless ultra small plastic package SYMBOL PARAMETER MAX. UNIT(1 mm 0.6 mm 0.5 mm)VCEO col

 9.10. Size:111K  philips
bc857bs.pdf

BC857RA
BC857RA

DISCRETE SEMICONDUCTORS DATA SHEEThandbook, halfpageMBD128BC857BSPNP general purpose double transistorProduct data sheet 1999 Apr 26Supersedes data of 1997 Jul 09 NXP Semiconductors Product data sheetPNP general purpose double transistor BC857BSFEATURES PINNING Low collector capacitancePIN DESCRIPTION Low collector-emitter saturation voltage1, 4 emitter TR1

 9.11. Size:53K  philips
bc856 bc857 3.pdf

BC857RA
BC857RA

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088BC856; BC857PNP general purpose transistors1999 Apr 12Product specificationSupersedes data of 1997 Apr 17Philips Semiconductors Product specificationPNP general purpose transistors BC856; BC857FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 65 V).1 base2 emitterAPPLICATIONS

 9.12. Size:147K  philips
bc856t bc857t series.pdf

BC857RA
BC857RA

DISCRETE SEMICONDUCTORS DATA SHEETM3D173BC856T; BC857T seriesPNP general purpose transistorsProduct data sheet 2000 Nov 15Supersedes data of 1999 Apr 26NXP Semiconductors Product data sheetBC856T; BC857T PNP general purpose transistorsseriesFEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 65 V).1 base2 emitterAPPLICATIONS3 c

 9.13. Size:51K  philips
bc857bs 2.pdf

BC857RA
BC857RA

DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageMBD128BC857BSPNP general purpose doubletransistor1999 Apr 26Product specificationSupersedes data of 1997 Jul 09Philips Semiconductors Product specificationPNP general purpose double transistor BC857BSFEATURES PINNING Low collector capacitancePIN DESCRIPTION Low collector-emitter saturation voltage1, 4 emit

 9.14. Size:57K  st
bc857b.pdf

BC857RA
BC857RA

BC857BSMALL SIGNAL PNP TRANSISTORPRELIMINARY DATAType MarkingBC857B 3F SILICON EPITAXIAL PLANAR PNPTRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGEFOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE ISBC847BAPPLICATIONS SOT-23 WELL SUITABLE FOR PORTABLEEQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITHHIGH GAIN AND LOW SATURATIONVOLTAGEIN

 9.15. Size:41K  st
bc857bw.pdf

BC857RA
BC857RA

BC857BWSMALL SIGNAL PNP TRANSISTORPRELIMINARY DATAType MarkingBC857BW 3FW SILICON EPITAXIAL PLANAR PNPTRANSISTOR MINIATURE SOT-323 PLASTIC PACKAGEFOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE ISBC847BWAPPLICATIONS SOT-323 WELL SUITABLE FOR PORTABLEEQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITHHIGH GAIN AND LOW SATURATIONVOLTA

 9.16. Size:44K  st
bc857 bc858.pdf

BC857RA
BC857RA

BC857BC858SMALL SIGNAL PNP TRANSISTORSType MarkingBC857A 3EBC857B 3FBC858A 3JBC858B 3K2 SILICON EPITAXIAL PLANAR PNPTRANSISTORS3 MINIATURE PLASTIC PACKAGE FOR1APPLICATION IN SURFACE MOUNTINGCIRCUITSSOT-23 VERY LOW NOISE AF AMPLIFIER NPN COMPLEMENTS FOR BC857 IS BC847INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitBC857 BC8

 9.17. Size:50K  fairchild semi
bc857s.pdf

BC857RA
BC857RA

BC857SE2B2C1C2SC70-6B1Mark: 3C pin #1 E1NOTE: The pinouts are symmetrical; pin 1 and pin4 are interchangeable. Units inside the carrier canbe of either orientation and will not affect thefunctionality of the device.PNP Multi-Chip General Purpose AmplifierThis device is designed for general purpose amplifier applications at collectorcurrents to 200 mA. Sourced from Pr

 9.18. Size:144K  fairchild semi
bc856 bc857 bc858 bc859 bc860.pdf

BC857RA
BC857RA

August 2006BC856- BC860tmPNP Epitaxial Silicon TransistorFeatures Switching and Amplifier Applications Suitable for automatic insertion in thick and thin-film circuits3 Low Noise: BC859, BC860 Complement to BC846 ... BC850 2SOT-2311. Base 2. Emitter 3. CollectorAbsolute Maximum Ratings* Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO

 9.19. Size:1369K  nxp
bc857aqa bc857bqa bc857cqa.pdf

BC857RA
BC857RA

BC857XQA series45 V, 100 mA PNP general-purpose transistorsRev. 1 26 August 2015 Product data sheet1. Product profile1.1 General descriptionPNP general-purpose transistors in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.Table 1. Product overviewType number Package NPN complementNexperia JEITA

 9.20. Size:357K  nxp
bc857am bc857bm bc857cm.pdf

BC857RA
BC857RA

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 9.21. Size:539K  nxp
bc857amb bc857xmb.pdf

BC857RA
BC857RA

BC857xMB series45 V, 100 mA PNP general-purpose transistorsRev. 1 21 February 2012 Product data sheet1. Product profile1.1 General descriptionPNP general-purpose transistors in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package NPN complementNXP JEITA JEDECBC857AMB SOT883B - - BC847AMBBC857BMB SOT883

 9.22. Size:1121K  nxp
bc857amb bc857bmb bc857cmb.pdf

BC857RA
BC857RA

BC857xMB series45 V, 100 mA PNP general-purpose transistorsRev. 1 21 February 2012 Product data sheet1. Product profile1.1 General descriptionPNP general-purpose transistors in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package NPN complementNexperia JEITA JEDECBC857AMB SOT883B - - BC847AMBBC857BMB S

 9.23. Size:539K  nxp
bc857bmb bc857cmb.pdf

BC857RA
BC857RA

BC857xMB series45 V, 100 mA PNP general-purpose transistorsRev. 1 21 February 2012 Product data sheet1. Product profile1.1 General descriptionPNP general-purpose transistors in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package NPN complementNXP JEITA JEDECBC857AMB SOT883B - - BC847AMBBC857BMB SOT883

 9.24. Size:195K  nxp
bc857qas.pdf

BC857RA
BC857RA

BC857QAS45 V, 100 mA PNP/PNP general-purpose transistor8 July 2015 Product data sheet1. General descriptionPNP/PNP general-purpose transistor in a leadless ultra small DFN1010B-6 (SOT1216)Surface-Mounted Device (SMD) plastic package.NPN/NPN complement: BC847QAS.NPN/PNP complement: BC847QAPN.2. Features and benefits Reduces component count Reduces pick and place costs

 9.25. Size:157K  nxp
bc856w bc856aw bc856bw bc857w bc857aw bc857bw bc857cw bc858w.pdf

BC857RA
BC857RA

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D102BC856W; BC857W; BC858WPNP general purpose transistorsProduct data sheet 2002 Feb 04Supersedes data of 1999 Apr 12NXP Semiconductors Product data sheetBC856W; BC857W; PNP general purpose transistorsBC858WFEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 65 V).1 base2 emitter

 9.26. Size:312K  nxp
bc857bv.pdf

BC857RA
BC857RA

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 9.27. Size:299K  nxp
bc857bs.pdf

BC857RA
BC857RA

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 9.28. Size:258K  nxp
bc857m bc857cm.pdf

BC857RA
BC857RA

DISCRETE SEMICONDUCTORS DATA SHEETM3D883BOTTOM VIEWBC857M seriesPNP general purpose transistorsProduct data sheet 2004 Mar 10Supersedes data of 2003 Jul 15NXP Semiconductors Product data sheetPNP general purpose transistors BC857M seriesFEATURES QUICK REFERENCE DATA Leadless ultra small plastic package SYMBOL PARAMETER MAX. UNIT(1 mm 0.6 mm 0.5 mm)VCEO col

 9.29. Size:258K  nxp
bc857bm bc857am.pdf

BC857RA
BC857RA

DISCRETE SEMICONDUCTORS DATA SHEETM3D883BOTTOM VIEWBC857M seriesPNP general purpose transistorsProduct data sheet 2004 Mar 10Supersedes data of 2003 Jul 15NXP Semiconductors Product data sheetPNP general purpose transistors BC857M seriesFEATURES QUICK REFERENCE DATA Leadless ultra small plastic package SYMBOL PARAMETER MAX. UNIT(1 mm 0.6 mm 0.5 mm)VCEO col

 9.30. Size:201K  nxp
bc856 bc856a bc856b bc857 bc857a bc857b bc857c bc858b.pdf

BC857RA
BC857RA

BC856; BC857; BC85865 V, 100 mA PNP general-purpose transistorsRev. 7 16 April 2018 Product data sheet1 Product profile1.1 General descriptionPNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device(SMD) plastic package.Table 1. Product overviewType number Package NPN complementNexperia JEDECBC856 SOT23 TO-236AB BC846BC856A BC846ABC856B BC84

 9.31. Size:158K  nxp
bc856 bc856a bc856b bc857 bc857a bc857b bc857c bc858.pdf

BC857RA
BC857RA

DISCRETE SEMICONDUCTORS DATA SHEETBC856; BC857; BC858PNP general purpose transistorsProduct data sheet 2004 Jan 16Supersedes data of 2003 Apr 09NXP Semiconductors Product data sheetPNP general purpose transistors BC856; BC857; BC858FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 65 V).1 base2 emitterAPPLICATIONS3 collector G

 9.32. Size:56K  samsung
bc856 bc857 bc858 bc859 bc860.pdf

BC857RA
BC857RA

PNP EPITAXIALBC856/857/858/859/860 SILICON TRANSISTORSWITCHING AND AMPLIFIER APPLICATIONSSOT-23 Sutable for automatic insertion in thick and thin-film circuits LOW NOISE: BC859, BC860 Complement to BC846 ... BC850ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO:BC856 -80 V:BC857/860 -50 V:BC858/859 -30 VCollecto

 9.33. Size:273K  siemens
bc856w bc857w bc858w bc859w bc860w.pdf

BC857RA
BC857RA

PNP Silicon AF Transistors BC 856W ... BC 860WFeatures For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 847W, BC 848W,BC 849W, BC 850W (NPN)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3BC 856 AW 3As Q62702-C2335 B E C SOT-323BC 856

 9.34. Size:122K  siemens
bc857s.pdf

BC857RA
BC857RA

BC 857SPNP Silicon AF Transistor Array For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated Transistors in one packageType Marking Ordering Code Pin Configuration PackageBC 857S 3Cs Q62702-2373 1/4=E1/E2 2/5=B1/B2 3/6=C2/C1 SOT-363Maximum RatingsParameter Symbol Values UnitCollec

 9.35. Size:271K  siemens
bc856 bc857 bc858 bc859 bc860.pdf

BC857RA
BC857RA

PNP Silicon AF Transistors BC 856 ... BC 860Features For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 846, BC 847,BC 849, BC 850 (NPN)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3BC 856 A 3As Q62702-C1773 B E C SOT-23BC 856 B 3Bs Q6

 9.36. Size:988K  rohm
bc857b.pdf

BC857RA
BC857RA

PNP small signal transistor BC857B Features Dimensions (Unit : mm) 1) Ideal for switching and AF amplifier applications. BC857B2) High current gain. 2.9 0.950.4 0.45(3)Packaging specificationsPackage Taping(2) (1)Type Code T1160.95 0.950.151.9Basic ordering unit (pieces) 3000(1)EmitterBC857B(2)BaseEach lead has same dimensions(3)CollectorAb

 9.37. Size:1377K  rohm
bc857bhzg.pdf

BC857RA
BC857RA

BC857B HZGDatasheetPNP General purpose transistorAEC-Q101 QualifiedlOutlinel SOT-23 Parameter Value VCEO-45VIC-100mASST3lFeatures lInner circuitl l1)BVCEO>45V(IC=1mA)2)Complements the BC847B HZGlApplicationlAUDIO FREQUENCY SMALL SIGNAL AMPLIFIERlPackaging specificationslBasicPackage Taping Reel size Tape widt

 9.38. Size:25K  rohm
bc857b(rohm).pdf

BC857RA

Transistors BC857B(SPEC-A32)607

 9.39. Size:401K  central
bc857cwr bc857bwr.pdf

BC857RA
BC857RA

BC856W SERIESBC857W SERIESwww.centralsemi.comSURFACE MOUNTDESCRIPTION:PNP SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR BC856W and BC857W Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE: SEE MARKING CODE

 9.40. Size:401K  central
bc857awr.pdf

BC857RA
BC857RA

BC856W SERIESBC857W SERIESwww.centralsemi.comSURFACE MOUNTDESCRIPTION:PNP SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR BC856W and BC857W Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE: SEE MARKING CODE

 9.41. Size:344K  central
bc856t bc857t series.pdf

BC857RA
BC857RA

BC856T SERIESBC857T SERIESwww.centralsemi.comSURFACE MOUNTDESCRIPTION:PNP SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR BC856T and BC857T Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE: SEE MARKING CODE TABLEON FOL

 9.42. Size:117K  diodes
bc856-aw bc857-bw bc858-cw.pdf

BC857RA
BC857RA

BC856AW - BC858CW PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Ideally Suited for Automated Insertion SOT-323 Complementary NPN Types Available (BC846W-BC848W) CDim Min Max For Switching and AF Amplifier Applications A 0.25 0.40 Lead Free/RoHS Compliant (Note 3) B CB 1.15 1.35 "Green" Device (Note 4 and 5) C 2.00 2.20 BED 0.65 Nominal

 9.43. Size:207K  diodes
bc857bfa.pdf

BC857RA
BC857RA

BC857BFA45V PNP SMALL SIGNAL TRANSISTOR IN DFN0806 Features Mechanical Data BVCEO > -45V Case: X2-DFN0806-3 IC = -100mA high Collector Current Case Material: Molded Plastic, Green Molding Compound. PD = 435mW Power Dissipation UL Flammability Classification Rating 94V-0 0.48mm2 package footprint, 16 times smaller than SOT23 Moisture Sensitivity: Leve

 9.44. Size:404K  diodes
bc857at bc857bt bc857ct.pdf

BC857RA
BC857RA

BC857AT, BT, CT 45V PNP SMALL SIGNAL TRANSISTOR IN SOT523 Features Mechanical Data BVCEO > -45V Case: SOT523 Case Material: Molded Plastic. Green Molding Compound. IC = -100mA Collector Current UL Flammability Rating 94V-0 Epitaxial Planar Die Construction Moisture Sensitivity: Level 1 per J-STD-020 Ultra-Small Surface Mount Package Ter

 9.45. Size:543K  diodes
bc857bfz 1188540.pdf

BC857RA
BC857RA

BC857BFZ 45V PNP SMALL SIGNAL TRANSISTOR IN DFN0606 Features Mechanical Data BVCEO > -45V Case: X2-DFN0606-3 IC = -100mA High Collector Current Case Material: Molded Plastic, Green Molding Compound. PD = 925mW Power Dissipation UL Flammability Classification Rating 94V-0 0.36mm2 Package Footprint, 40% Smaller than DFN1006 Moisture Sensitivity: Level

 9.46. Size:113K  diodes
bc856 bc857 bc858.pdf

BC857RA
BC857RA

BC856A - BC858C PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR Please click here to visit our online spice models database.Features Ideally Suited for Automatic Insertion Complementary NPN Types Available (BC846-BC848) ASOT-23 For Switching and AF Amplifier Applications CDim Min Max Qualified to AEC-Q101 Standards for High Reliability A 0.37 0.51 B C Lead

 9.47. Size:35K  diodes
bc856 bc857 bc858 bc859 bc860.pdf

BC857RA
BC857RA

SOT23 PNP SILICON PLANAR BC856 BC857BC858 BC859GENERAL PURPOSE TRANSISTORSBC860 ISSUE 6 - APRIL 1997 T I D T I T T E 8 8 8 8 8 C 8 8 8 8 8 8 8 8 8 8B 8 8 8 8 8 8 8 8 SOT23 8 8 8 8 8 8 ABSOLUTE MAXIMUM RATINGS. T 8 8 8 8 8 8 IT II V I V 8 V II i V I V 8 V II i V I V V i V I V V i II I I I I I Di i i T i T T T ELECTRICAL CH

 9.48. Size:103K  diodes
bc857at bt ct.pdf

BC857RA
BC857RA

BC857AT, BT, CT PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Die Construction SOT-523 Complementary NPN Types Available (BC847AT,BT,CT) CDim Min Max Typ Ultra-Small Surface Mount Package A 0.15 0.30 0.22 Lead Free/RoHS Compliant (Note 2) TOP VIEW B CB 0.75 0.85 0.80 Qualified to AEC-Q101 Standards for High Reliability C 1.45 1.75

 9.49. Size:347K  diodes
bc857bv.pdf

BC857RA
BC857RA

BC857BV PNP DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Die Construction Case: SOT-563 Complementary PNP Type Available (BC847BV) Case Material: Molded Plastic, Green Molding Compound; Ultra-Small Surface Mount Package UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 9.50. Size:194K  diodes
bc857bs.pdf

BC857RA
BC857RA

BC857BS45V DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Ultra-Small Surface Mount Package Case: SOT363 Ideally Suited for Automated Insertion Case Material: Molded Plastic, Green Molding Compound. For switching and AF Amplifier Application UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS compliant (Not

 9.51. Size:290K  diodes
bc856a bc856b bc857a bc857b bc857c bc858a bc858b bc858c.pdf

BC857RA
BC857RA

BC856A-BC858C PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Ideally Suited for Automatic Insertion Case: SOT23 Complementary NPN Types: BC846 BC848 Case Material: Molded Plastic, Green Molding Compound For Switching and AF Amplifier Applications UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Not

 9.52. Size:234K  diodes
bc857blp4.pdf

BC857RA
BC857RA

BC857BLP4 45V PNP SMALL SIGNAL TRANSISTOR IN DFN1006 Features Mechanical Data Case: X2-DFN1006-3 BVCEO > -45V Case Material: Molded Plastic, "Green" Molding Compound. IC = -100mA High Collector Current UL Flammability Classification Rating 94V-0 PD = 1000mW Power Dissipation Moisture Sensitivity: Level 1 per J-STD-020 0.60mm2 Package Footprint, 13

 9.53. Size:380K  diodes
bc857blp.pdf

BC857RA
BC857RA

BC857BLP 45V PNP SMALL SIGNAL TRANSISTOR IN DFN1006 Features Mechanical Data Case: X1-DFN1006-3 BVCEO > -45V Case Material: Molded Plastic, "Green" Molding Compound. IC = -100mA High Collector Current UL Flammability Classification Rating 94V-0 PD = 1000mW Power Dissipation Moisture Sensitivity: Level 1 per J-STD-020 0.60mm2 Package Footprint, 13

 9.54. Size:140K  infineon
bc856a bc856b bc856bw bc857a bc857b bc857bf bc857bl3 bc857bw bc857c bc857cw bc858a bc858b bc858bl3 bc858bw bc858c bc858cw bc859b bc859c bc860b bc860bw bc860cw.pdf

BC857RA
BC857RA

BC856...-BC860...PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC846...-BC850... (NPN) Pb-free (RoHS compliant) package1) Qualified according AEC Q1011Pb-containing package may be available upon special request20

 9.55. Size:861K  infineon
bc857a bc857b bc857bl3 bc857bw bc857c bc857cw bc858a bc858b bc858bw bc858c bc858cw bc859c bc860b bc860bw bc860cw.pdf

BC857RA
BC857RA

BC857...-BC860...PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC847...-BC850... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q1011)1BC857BL3 is not qualified according AEC Q101Type Marking Pin

 9.56. Size:140K  infineon
bc856series bc857series bc858series bc859series bc860series.pdf

BC857RA
BC857RA

BC856...-BC860...PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC846...-BC850... (NPN) Pb-free (RoHS compliant) package1) Qualified according AEC Q1011Pb-containing package may be available upon special request20

 9.57. Size:858K  infineon
bc857bl3.pdf

BC857RA
BC857RA

BC857...-BC860...PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC847...-BC850... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q1011)1BC857BL3 is not qualified according AEC Q101Type Marking Pin

 9.58. Size:849K  infineon
bc856s bc856u bc857s.pdf

BC857RA
BC857RA

BC856S/U_BC857SPNP Silicon AF Transistor Arrays For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated transistor with good matching in one package BC856S / U, BC857S: For orientation in reel see package information below Pb-free (RoHS compliant) package Qualified according

 9.59. Size:778K  mcc
bc856aw bc856bw bc857aw bc857bw bc857cw bc858aw bc858bw bc858cw.pdf

BC857RA
BC857RA

BC856AW THRU BC858CWFeatures Halogen free available upon request by adding suffix "-HF" Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating PNP Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSGeneral Purpose Compliant. See Ordering Information)TransistorsMaximum Ratings @ 25C Unless Otherwise Specified Operating Junction Tempera

 9.60. Size:468K  mcc
bc856a bc856b bc857a bc857b.pdf

BC857RA
BC857RA

M C CBC856ARMicro Commercial Components Micro Commercial ComponentsTHRU130 W Cochran St, Unit BSimi Valley, CA 93065BC858CTel:818-701-4933FeaturesPNP Small Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability ratingSignal TransistorMoisure Sensitivity Level 1 Ideally Suited for Au

 9.61. Size:1153K  mcc
bc857s.pdf

BC857RA
BC857RA

BC857SFeatures Muti-Chip Transistor Halogen Free. Green Device (Note 1)PNP Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingPlastic-Encapsulate Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS TransistorsCompliant. See Ordering Information) Maximum Ratings @ 25C Unless Otherwise SpecifiedSOT-363 Operating Junct

 9.62. Size:207K  mcc
bc857bv.pdf

BC857RA
BC857RA

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthBC857BVMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939FeaturesPNP Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1Transistors

 9.63. Size:1205K  mcc
bc857bs.pdf

BC857RA
BC857RA

BC857BSFeatures Muti-Chip Transistor Halogen Free. Green Device (Note 1)PNP Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingPlastic-Encapsulate Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS TransistorsCompliant. See Ordering Information) Maximum Ratings @ 25C Unless Otherwise SpecifiedSOT-363 Operating Junc

 9.64. Size:432K  mcc
bc857a bc857b bc857c.pdf

BC857RA
BC857RA

BC857A,BC857B,BC857CFeatures For Switching and AF Amplifier Applications Halogen Free Available Upon Request By Adding Suffix "-HF"PNP Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingSmall Signal Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSTransistorCompliant. See Ordering Information)Maximum RatingsSOT-23 Operati

 9.65. Size:195K  mcc
bc856a bc857b bc858c sot-23.pdf

BC857RA
BC857RA

BC856AMCCMicro Commercial ComponentsTMTHRU20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933BC858CFax: (818) 701-4939FeaturesPNP Small Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability ratingSignal TransistorMoisure Sensitivity Level 1

 9.66. Size:148K  onsemi
bc856alt1g bc856blt1g bc857alt1g bc857blt1g bc857clt1g bc858alt1g bc858blt1g bc858blt3g bc859blt1g bc859clt1g.pdf

BC857RA
BC857RA

BC856ALT1G SeriesGeneral PurposeTransistorsPNP SiliconFeatureswww.onsemi.com S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101COLLECTORQualified and PPAP Capable3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS (TA = 25C unless otherwise noted)2

 9.67. Size:82K  onsemi
bc856bdw1t1g bc857bdw1t1g bc857cdw1t1g bc858cdw1t1g.pdf

BC857RA
BC857RA

BC856BDW1T1G,SBC856BDW1T1G Series,BC857BDW1T1G,SBC857BDW1T1G Series,BC858CDW1T1G Serieswww.onsemi.comDual General PurposeTransistorsPNP DualsSOT-363/SC-88These transistors are designed for general purpose amplifierCASE 419BSTYLE 1applications. They are housed in the SOT-363/SC-88 which isdesigned for low power surface mount applications.(3) (2) (1)Features S

 9.68. Size:86K  onsemi
nsvbc857blt3g.pdf

BC857RA
BC857RA

BC856ALT1G SeriesGeneral PurposeTransistorsPNP SiliconFeatureshttp://onsemi.com S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101COLLECTORQualified and PPAP Capable3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASE2EMITTERMAXIMUM RATINGS (TA = 25C unless other

 9.69. Size:81K  onsemi
nsvbc857cwt1g.pdf

BC857RA
BC857RA

BC856B, BC857B, BC858AGeneral PurposeTransistorsPNP SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 which isdesigned for low power surface mount applications.COLLECTOR3Features S and NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Change Requirement

 9.70. Size:156K  onsemi
bc856bdw1t1g sbc856bdw1t1g bc857bdw1t1g sbc857bdw1t1g bc857cdw1t1g sbc857cdw1t1g bc858cdw1t1g.pdf

BC857RA
BC857RA

BC856BDW1T1G,SBC856BDW1T1G Series,BC857BDW1T1G,SBC857BDW1T1G Series,BC858CDW1T1G Serieswww.onsemi.comDual General PurposeTransistorsPNP DualsSOT-363/SC-88These transistors are designed for general purpose amplifierCASE 419BSTYLE 1applications. They are housed in the SOT-363/SC-88 which isdesigned for low power surface mount applications.(3) (2) (1)Features S

 9.71. Size:181K  onsemi
sbc857cdw1t1g.pdf

BC857RA
BC857RA

BC856BDW1T1G,SBC856BDW1T1G Series,BC857BDW1T1G,SBC857BDW1T1G Series,BC858CDW1T1G SeriesPreferred Deviceshttp://onsemi.comDual General PurposeTransistorsPNP DualsSOT-363/SC-88CASE 419BSTYLE 1These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which is(3) (2) (1)designed for low power surface mount applicat

 9.72. Size:81K  onsemi
bc857cwt1g bc857bwt1g.pdf

BC857RA
BC857RA

BC856B, BC857B, BC858AGeneral PurposeTransistorsPNP SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 which isdesigned for low power surface mount applications.COLLECTOR3Features S and NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Change Requirement

 9.73. Size:74K  onsemi
bc857btt1 bc857ctt1.pdf

BC857RA
BC857RA

BC857BTT1, BC857CTT1Preferred DevicesGeneral Purpose TransistorPNP SiliconThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT-416/SC-75 which isdesigned for low power surface mount applications.http://onsemi.comFeaturesCOLLECTOR Pb-Free Package is Available*31BASEMAXIMUM RATINGS (TA = 25C)Rating Symbol Max Unit

 9.74. Size:181K  onsemi
bc856bdw1t1g bc857cdw1t1g.pdf

BC857RA
BC857RA

BC856BDW1T1G,SBC856BDW1T1G Series,BC857BDW1T1G,SBC857BDW1T1G Series,BC858CDW1T1G SeriesPreferred Deviceshttp://onsemi.comDual General PurposeTransistorsPNP DualsSOT-363/SC-88CASE 419BSTYLE 1These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which is(3) (2) (1)designed for low power surface mount applicat

 9.75. Size:209K  onsemi
bc856alt1g bc856blt1g bc857alt1g bc857blt1g bc857clt1g bc858alt1g bc858blt1g bc858clt1g bc859blt1g bc859clt1g.pdf

BC857RA
BC857RA

BC856ALT1G SeriesGeneral PurposeTransistorsPNP SiliconFeatureswww.onsemi.com S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101COLLECTORQualified and PPAP Capable3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS (TA = 25C unless otherwise noted)2

 9.76. Size:64K  onsemi
bc857btt1g.pdf

BC857RA
BC857RA

BC857BTT1GGeneral Purpose TransistorPNP SiliconThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT-416/SC-75 which isdesigned for low power surface mount applications.http://onsemi.comFeaturesCOLLECTOR NSV Prefix for Automotive and Other Applications Requiring3Unique Site and Control Change Requirements; AEC-Q101Qualifi

 9.77. Size:143K  onsemi
bc856bwt1 bc857bwt1 bc858awt1-series.pdf

BC857RA
BC857RA

BC856BWT1 Series,BC857BWT1 Series,BC858AWT1 SeriesGeneral PurposeTransistorshttp://onsemi.comPNP SiliconCOLLECTOR3These transistors are designed for general purpose amplifierapplications. They are housed in the SC--70/SOT--323 which isdesigned for low power surface mount applications. 1BASEFeatures These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS2

 9.78. Size:78K  onsemi
bc856bwt1g bc857bwt1g bc857cwt1g bc858awt1g bc858bwt1g.pdf

BC857RA
BC857RA

BC856B, BC857B, BC858AGeneral PurposeTransistorsPNP SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 which isdesigned for low power surface mount applications.COLLECTOR3Features S and NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Change Requirement

 9.79. Size:181K  onsemi
bc856bdw1t3g bc857bdw1t1g.pdf

BC857RA
BC857RA

BC856BDW1T1G,SBC856BDW1T1G Series,BC857BDW1T1G,SBC857BDW1T1G Series,BC858CDW1T1G SeriesPreferred Deviceshttp://onsemi.comDual General PurposeTransistorsPNP DualsSOT-363/SC-88CASE 419BSTYLE 1These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which is(3) (2) (1)designed for low power surface mount applicat

 9.80. Size:67K  onsemi
nsvbc857btt1g.pdf

BC857RA
BC857RA

BC857BTT1GGeneral Purpose TransistorPNP SiliconThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT-416/SC-75 which isdesigned for low power surface mount applications.http://onsemi.comFeaturesCOLLECTOR NSV Prefix for Automotive and Other Applications Requiring3Unique Site and Control Change Requirements; AEC-Q101Qualifi

 9.81. Size:181K  onsemi
sbc857bdw1t1g.pdf

BC857RA
BC857RA

BC856BDW1T1G,SBC856BDW1T1G Series,BC857BDW1T1G,SBC857BDW1T1G Series,BC858CDW1T1G SeriesPreferred Deviceshttp://onsemi.comDual General PurposeTransistorsPNP DualsSOT-363/SC-88CASE 419BSTYLE 1These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which is(3) (2) (1)designed for low power surface mount applicat

 9.82. Size:215K  onsemi
bc856amtf bc856bmtf bc856cmtf bc857amtf bc857bmtf bc857cmtf bc858amtf bc858bmtf bc858cmtf bc859amtf bc859bmtf bc859cmtf bc860amtf bc860bmtf bc860cmtf.pdf

BC857RA
BC857RA

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.83. Size:172K  onsemi
bc856bdw1t1g bc857bdw1t1g bc858cdw1t1g.pdf

BC857RA
BC857RA

BC856BDW1T1G,BC857BDW1T1G Series,BC858CDW1T1G SeriesPreferred DevicesDual General PurposeTransistorshttp://onsemi.comPNP Duals(3) (2) (1)These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which isdesigned for low power surface mount applications.Q1 Q2Features These Devices are Pb-Free, Halogen Free/BFR Fr

 9.84. Size:156K  onsemi
bc856bdw1t1g bc857bdw1t1g sbc857bdw1t1g bc857cdw1t1g bc858cdw1t1g.pdf

BC857RA
BC857RA

BC856BDW1T1G,SBC856BDW1T1G Series,BC857BDW1T1G,SBC857BDW1T1G Series,BC858CDW1T1G Serieswww.onsemi.comDual General PurposeTransistorsPNP DualsSOT-363/SC-88These transistors are designed for general purpose amplifierCASE 419BSTYLE 1applications. They are housed in the SOT-363/SC-88 which isdesigned for low power surface mount applications.(3) (2) (1)Features S

 9.85. Size:81K  onsemi
sbc857bwt1g.pdf

BC857RA
BC857RA

BC856B, BC857B, BC858AGeneral PurposeTransistorsPNP SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 which isdesigned for low power surface mount applications.COLLECTOR3Features S and NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Change Requirement

 9.86. Size:801K  onsemi
bc856blt1g bc857clt3g bc856blt3g bc857blt1g bc857blt3g bc858blt3g bc858alt1g bc857clt1g.pdf

BC857RA
BC857RA

BC856ALT1G Series,SBC856ALT1G SeriesGeneral PurposeTransistorsPNP Siliconhttp://onsemi.comFeatures S and NSV Prefix for Automotive and Other Applications RequiringCOLLECTORUnique Site and Control Change Requirements; AEC-Q1013Qualified and PPAP Capable1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSBASECompliant2EMITTER3MAXIMUM RATINGS

 9.87. Size:269K  auk
bc857.pdf

BC857RA
BC857RA

BC857PNP Silicon TransistorDescriptions PIN Connection General purpose application Switching application C Features B High voltage : VCEO=-45V E Complementary pair with BC847 SOT-23 Ordering Information Type NO. Marking Package Code UA BC857 SOT-23 Device Code hFE Rank Year&Week Code Absolute maximum ratin

 9.88. Size:279K  auk
bc857f.pdf

BC857RA
BC857RA

BC857FPNP Silicon TransistorDescriptions PIN Connection General purpose application Switching application 3 Features 1 High voltage : VCEO=-45V Complementary pair with BC847F 2 SOT-23F Ordering Information Type NO. Marking Package Code UA BC857F SOT-23F Device Code hFE Rank Year&Week Code Absolute maximum

 9.89. Size:178K  auk
bc857uf.pdf

BC857RA
BC857RA

BC857UFSemiconductor Semiconductor PNP Silicon TransistorDescriptions General purpose application Switching application Features High voltage : VCEO=-45V Complementary pair with BC847UF Ordering Information Type NO. Marking Package Code BC857UF BV SOT-323F : hFE rank Outline Dimensions unit : mm 1.95~2.25 1.20~1.40 1 3 2 PIN Connect

 9.90. Size:269K  auk
bc857u.pdf

BC857RA
BC857RA

BC857UPNP Silicon TransistorDescriptions PIN Connection General purpose application Switching application 3 Features 1 High voltage : VCEO=-45V 2 Complementary pair with BC847U SOT-323 Ordering Information Type NO. Marking Package Code BV BC857U SOT-323 Device Code hFE Rank Year&Week Code Absolute maximum ra

 9.91. Size:77K  rectron
bc856-bc857-bc858.pdf

BC857RA
BC857RA

BC856 BC857 BC858PNP Silicon Planar Epitaxial Transistors Pin configuration:1. BASE2. EMITTER3. COLLECTOR312Unit: inch (mm)Absolute Maximum Ratings (Ta = 25 oC unless specified otherwise) SYMBOL BC856 BC857 BC858 UNITSDESCRIPTIONVCBOCollector Base Voltage 80 50 30 VCollector Emmitter Voltage (+VBE = 1V) VCEX80 50 30 VVCEOCollector Emitter Voltage 65 45 30

 9.92. Size:258K  secos
bc856a-bc857a-bc858a.pdf

BC857RA
BC857RA

BC856A, BBC857A, B, CElektronische BauelementeBC858A, B, CA suffix of "-C" specifies halogen & lead-freeFEATURESSOT-23nAGeneral Purpose Transistor PNP TypeDim Min MaxLnCollect current : - 0.1AA 2.800 3.040O OnOperating Temp. : -55 C ~ +150 C3 B 1.200 1.400STop ViewBnRoHS compliant product C 0.890 1.1101 2D 0.370 0.500V GG 1.780 2.040COLLE

 9.93. Size:444K  secos
bc856aw-bc857aw-bc858aw.pdf

BC857RA
BC857RA

BC856AW, BWBC857AW, BW, CWElektronische BauelementeBC858AW, BW, CWRoHS Compliant ProductFEATURES* Ideally suited for automatic insertion * For Switching and AF Amplifier Applications SOT-323O O* Operating Temp. : -55 C ~ +150 C Dim Min MaxAA 1.800 2.200LB 1.150 1.350C OLLE C TOR 3C 0.800 1.000STop View3 B12 D 0.300 0.400G 1.200 1.4001V GH 0.000 0.

 9.94. Size:845K  secos
bc857s.pdf

BC857RA
BC857RA

BC857SPNP Silicon Elektronische BauelementeMulti-Chip TransistorRoHS Compliant ProductSOT-363o.055(1.40)8.047(1.20)0o .026TYP(0.65TYP) .021REF(0.525)REF* Features.053(1.35).096(2.45).045(1.15).085(2.15)Power dissipationOPCM : 0.3 W (Tamp.= 25 C).018(0.46).010(0.26)Collector current.014(0.35).006(0.15).006(0.15)ICM : -0.2 A .003(0.08).0

 9.95. Size:251K  secos
bc857bv.pdf

BC857RA
BC857RA

BC857BV Dual PNP Plastic-Encapsulated Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-563 FEATURES A Epitaxial Die Construction Complementary NPN Types Available (BC847BV) B Ultra-Small Surface Mount Package MARKING JD G HK5V F ECPACKAGE INFORMATION Millimeter Millimeter REF. REF.

 9.96. Size:352K  taiwansemi
bc856a bc857a bc858a bc856b bc857b bc858b bc857c bc858c.pdf

BC857RA
BC857RA

BC856A SERIESTaiwan SemiconductorSmall Signal Product200mW, PNP Small Signal TransistorFEATURES - Epitaxial planar die construction- Surface device type mounting- Moisture sensitivity level 1- Matte Tin(Sn) lead finish with Nickel(Ni) underplate- Pb free and RoHS compliant- Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date codeMECHANICA

 9.97. Size:371K  cdil
bc856w bc857w bc858w.pdf

BC857RA
BC857RA

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR EPITAXIAL TRANSISTORS BC856W , 857W, 858WSOT-323Formed SMD PackageMarkingBC856W =3D BC857AW =3EBC856AW =3A BC857BW =3FBC856BW =3B BC857CW =3GBC857W =3H BC858W =3MGeneral Purpose Switching and Amplification.ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise

 9.98. Size:79K  cdil
bc856 bc857 bc858.pdf

BC857RA
BC857RA

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD Package BC856 BC857BC858SILICON PLANAR EPITAXIAL TRANSISTORSPNP transistorsMarkingPACKAGE OUTLINE DETAILSBC856 = 3D ALL DIMENSIONS IN mmBC856A = 3ABC856B = 3BBC857 = 3HBC857A = 3EBC857B = 3FBC857C = 3GBC858 = 3MBC858A = 3JBC858B = 3KBC858C = 3LPi

 9.99. Size:149K  jiangsu
bc856w bc857w bc858w.pdf

BC857RA
BC857RA

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-323 Plastic-Encapsulate Transistors BC856W TRANSISTOR (PNP) BC857W SOT-323 BC858W 1. BASE FEATURES 2. EMITTER Ideally suited for automatic insertion 3. COLLECTOR For Switching and AF Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit Collector-Base Volta

 9.100. Size:901K  jiangsu
bc857s.pdf

BC857RA
BC857RA

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate TransistorsDUAL TRANSISTOR (PNP+PNP) BC857SIsolated Transistor and DiodeSOT-363 FEATURES Two transistors in one package Reduces number of components and board space No mutual interference between the transistorsMARKING: 3C MAXIMUM RATINGS(Ta=25 unless otherwise noted) Symbol Parameter Value

 9.101. Size:976K  jiangsu
bc856 bc857 bc858.pdf

BC857RA
BC857RA

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD J C T SOT-23 Plastic-Encapsulate Transistors BC856 TRANSISTOR (PNP) BC857 SOT-23 BC858 FEATURES 1. BASE 2. EMITTER Ideally suited for automatic insertion 3. COLLECTOR For Switching and AF Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit Collector-Base Volta

 9.102. Size:1398K  jiangsu
bc857bv.pdf

BC857RA
BC857RA

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-563 Plastic-Encapsulate Transistors BC857BV DUAL TRANSISTOR (PNP+PNP)SOT-563 FEATURES Epitaxial Die Construction Complementary NPN Types Available(BC847BV) Ultra-Small Surface Mount PackageMarking: K5V MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V

 9.103. Size:729K  jiangsu
ad-bc856 ad-bc857 ad-bc858.pdf

BC857RA
BC857RA

www.jscj-elec.com AD-BC856/57/58 series JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-BC856/57/58 Series Plastic-Encapsulated Transistor AD-BC856/57/58 series Transistor (PNP) FEATURES Ideally suited for automatic insertion For switching and AF amplifier applications AEC-Q101 qualified MARKING AD-BC856-A =3A; AD-BC856-B =3B AD-BC857-A =3E; AD-BC8

 9.104. Size:445K  jiangsu
bc856a bc856b bc857a bc857b bc857c bc858a bc858b bc858c.pdf

BC857RA
BC857RA

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors BC856A, B TRANSISTOR (PNP) BC857A, B,C SOT-23 BC858A, B,C FEATURES 1. BASE 2. EMITTER Ideally suited for automatic insertion 3. COLLECTOR For Switching and AF Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Colle

 9.105. Size:34K  kec
bc856w bc857w bc858w.pdf

BC857RA
BC857RA

SEMICONDUCTOR BC856W/7W/8WTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION .EM B MDIM MILLIMETERSFEATURES_A+2.00 0.20D2For Complementary With NPN Type BC846W/847W/848W. _+B 1.25 0.15_+C 0.90 0.1031D 0.3+0.10/-0.05_E +2.10 0.20G 0.65H 0.15+0.1/-0.06J 1.30MAXIMUM RATING (Ta=25)K 0.00-0.

 9.106. Size:394K  kec
bc856 bc857 bc858.pdf

BC857RA
BC857RA

SEMICONDUCTOR BC856/7/8TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION .EL B LDIM MILLIMETERSFEATURES_+2.93 0.20AB 1.30+0.20/-0.15For Complementary With NPN Type BC846/847/848.C 1.30 MAX23 D 0.45+0.15/-0.05E 2.40+0.30/-0.201G 1.90H 0.95J 0.13+0.10/-0.05K 0.00 ~ 0.10MAXIMUM RATING (Ta=25 )L 0.55P P

 9.107. Size:3090K  htsemi
bc857s.pdf

BC857RA

BC857S Multi-Chip TRANSISTOR (PNP) SOT-363 FEATURES Power dissipation C1 B2E2 PCM : 300 mW(Tamb=25) Collector current E1 B1 ICM : -200 mA C2 Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range TJ,Tstg: -55to +150 MARKING: 3C ELECTRICAL CHARACTERISTICS(Ta=25 unless otherwise specified) Parameter Symbo

 9.108. Size:1334K  htsemi
bc856 bc857 bc858.pdf

BC857RA
BC857RA

BC856A,B BC857A, B,C BC858A, B,C TRANSISTOR (PNP) FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications SOT-23 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. EMITTER 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage BC856 -80 V BC857 -50 BC858 -30 VCEO Collector-Emitter Voltage B

 9.109. Size:593K  htsemi
bc857bv.pdf

BC857RA
BC857RA

BC857BVDUAL TRANSISTOR (PNP) FEATURES SOT-563 Epitaxial Die Construction Complementary NPN Types Available (BC847BV) Ultra-Small Surface Mount Package Marking: K5V MAXIMUM RATINGS (TA=25 unless otherwise noted ) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Cur

 9.110. Size:674K  htsemi
bc856a bc856b bc857a bc857b bc857c bc858a bc858b bc858c.pdf

BC857RA
BC857RA

BC856A,B BC857A, B,C BC858A, B,C TRANSISTOR (PNP) FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications SOT-23 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. EMITTER 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage BC856 -80 V BC857 -50 BC858 -30 VCEO Collector-Emitter Voltage B

 9.111. Size:300K  gsme
bc857.pdf

BC857RA
BC857RA

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM856,857,858( BC856,857,858)MAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGSCharacteristic Symbol GM856A,B GM857A,B,C GM

 9.112. Size:283K  lge
bc856a-b bc857a-b-c bc858a-b-c.pdf

BC857RA
BC857RA

BC856A,BBC857A,B,CBC858A,B,C SOT-23 Transistor(PNP)1. BASE 2. EMITTER 3. COLLECTOR SOT-23FeaturesIdeally suited for automatic insertion For Switching and AF Amplifier Applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage BC856 -80 V BC857 -50 BC858 -30 Dimensions in inches and (millimeters

 9.113. Size:204K  lge
bc857t.pdf

BC857RA
BC857RA

BC857AT/BT/CT SOT-523 Transistor(PNP)SOT-5231. BASE 2. EMITTER 3. COLLECTOR Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications MARKING: BC857AT=3E; BC857BT=3F; BC857CT=3G Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V VCEO

 9.114. Size:2038K  lge
bc856 bc857 bc858.pdf

BC857RA
BC857RA

BC856/857/858 PNP general purpose TransistorA SOT-23 FEATURES Dim Min Max Low current.(max.100mA).A 2.70 3.10EB 1.10 1.50 Low voltage..K BC 1.0 TypicalAPPLICATIONS D 0.4 TypicalE 0.35 0.48 General purpose switching and amplification. G 1.80 2.00JDH 0.02 0.1G J 0.1 TypicalORDERING INFORMATION K 2.20 2.60H Type No. Marking Package Code C All Dim

 9.115. Size:214K  lge
bc857bv.pdf

BC857RA
BC857RA

BC857BV SOT-563 Dual Transistor (PNP)SOT-5631.600Features 1.200 1.600Epitaxial Die Construction 0.220 Complementary NPN Types Available (BC847BV) 0.500 Ultra-Small Surface Mount Package 0.565Marking: K5V Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted ) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V VC

 9.116. Size:279K  lge
bc856aw-bw bc857aw-bw-cw bc858aw-bw-cw.pdf

BC857RA
BC857RA

BC856AW,BWBC857AW,BW,CWBC858AW,BW,CW STO-323 Transistor(PNP)1. BASE 2. EMITTER SOT-3233. COLLECTOR Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsCollector-Base Voltage BC856W -80 VCBO V BC857W -50 Dimensions in inches and (millimeters)

 9.117. Size:546K  wietron
bc856aw bc857aw bc858aw.pdf

BC857RA
BC857RA

BC856AW/BWBC857AW/BWBC858AW/BW/CWCOLLECTORGeneral Purpose Transistor 33PNP Silicon11P b Lead(Pb)-FreeBASE22EMITTERSOT-323(SC-70)MaximumRatings (TA=25Cunless otherwise noted)Rating Symbol Value UnitCollector-Emitter Voltage BC856 -65VCEOBC857 -45 VBC858 -30Collector-Base Voltage BC856 -80VCBOBC857 -50 VBC858 -30Emitter-Base Voltage BC856 -5.0

 9.118. Size:1005K  wietron
bc856bdw bc857 bc858.pdf

BC857RA
BC857RA

BC856BDW SeriesPNP Dual General Purpose Transistors2 13P b Lead(Pb)-Free65412345 6PNP+PNPSOT-363(SC-88)Maximum RatingsRating Symbol BC856 BC857 BC858 Unit65 45 30Collector-Emitter Voltage VCEOV80 50 30Collector-Base Voltage VCBOV5.0 5.0 5.0Emitter-Base Voltage VEBOVCollector Current-Continuous IC 100 100100 mAThermal CharacteristicsChara

 9.119. Size:438K  wietron
bc856 bc857 bc858 bc859.pdf

BC857RA
BC857RA

BC856A/B-BC857A/B/CBC858A/B/C-BC859B/CCOLLECTOR3General Purpose Transistor MARKING DIAGRAM33PNP Silicon 112BASEXX = DeviceSOT-23 Code (See1 2 Table Below)2EMITTER( T =25 C unless otherwise noted)Maximum Ratings ARating Symbol Value UnitCollector-Emitter Voltage V -65BC856 CEOVBC857 -45BC858,BC859 -30Collector-Base VoltageBC856 -80VBC857

 9.120. Size:244K  shenzhen
bc856 bc857 bc858.pdf

BC857RA
BC857RA

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors BC856A,B TRANSISTOR (PNP) BC857A, B,C SOT-23 BC858A, B,C FEATURES 1. BASE 2. EMITTER Ideally suited for automatic insertion 3. COLLECTOR For Switching and AF Amplifier Applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Colle

 9.121. Size:560K  can-sheng
bc856 bc857 bc858 sot-23.pdf

BC857RA
BC857RA

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors BC856A,B TRANSISTOR (PNP) BC857A, B,C SOT-23 BC858A, B,C FEATURES Ideally suited for automatic insertion 1BASE For Switching and AF Amplifier Applications 2EMTTER 3COLLECTORMAXIMUM RATINGS (TA=25 unless

 9.122. Size:844K  blue-rocket-elect
bc857.pdf

BC857RA
BC857RA

BC857Rev.G Aug.-2018 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features Low current, Low voltage. / Applications General power amplifier application. / Equivalent Circuit / Pinning 3 1

 9.123. Size:173K  semtech
bc856 bc857 bc858 bc859 bc860.pdf

BC857RA
BC857RA

BC856BC860 PNP Silicon Epitaxial Transistor for switching and amplifier applications TO-236 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage BC856 -VCBO 80 V BC857, BC860 -VCBO 50 V BC858, BC859 -VCBO 30 V Collector Emitter Voltage BC856 -VCEO 65 V BC857, BC860 -VCEO 45 V BC858, BC859 -VCEO 30 V Emitter Base Volt

 9.124. Size:253K  semtech
bc858lt1 bc857lt1.pdf

BC857RA
BC857RA

BC856LT1BC858LT1 PNP Silicon General Purpose Transistors for switching and amplifier applications. As complementary types the NPN transistors BC846ALT1...BC850CLT1 are recommended. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 oC) Symbol BC856 BC857 BC858 UnitCollector Base Voltage -VCBO 80 50 30 VCollector Emitter Voltage -VCEO 65 45 30 VEmitter Base Voltage -

 9.125. Size:159K  lrc
lbc856alt3g lbc856blt3g lbc857alt1g lbc857blt3g lbc857clt1g lbc858alt1g lbc858blt3g lbc858clt3g lbc859blt1g lbc859clt3g.pdf

BC857RA
BC857RA

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC857CLT1GPNP Silicon SeriesS-LBC857CLT1G Moisture Sensitivity Level: 1 Series ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V We declare that the material of product compliance with 3RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site a

 9.126. Size:176K  lrc
lbc857bdw1t1g.pdf

BC857RA
BC857RA

LESHAN RADIO COMPANY, LTD.Dual General PurposeLBC85** DW1T1GTransistorsS-LBC85** DW1T1G65These transistors are designed for general purpose amplifier4applications. They are housed in the SOT363/SC88 which isdesigned for low power surface mount applications.1We declare that the material of product compliance with RoHS requirements.23 Device Marking:SOT-36

 9.127. Size:135K  lrc
lbc857att1g lbc857btt1g lbc857ctt1g.pdf

BC857RA
BC857RA

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC857ATT1GPNP Silicon SeriesThese transistors are designed for general purpose amplifierS-LBC857ATT1Gapplications. They are housed in the SC-89 package which is designed Seriesfor low power surface mount applications.Features Pb-Free Packages are Available S- Prefix for Automotive and Other Applications Requiri

 9.128. Size:234K  lrc
lbc856alt1g lbc856blt1g lbc857alt1g lbc857alt1g lbc857blt1g lbc857clt1g lbc857clt1g lbc858alt1g lbc858alt1g lbc858blt1g lbc858clt1g lbc859blt1g lbc859blt1g lbc859clt1g.pdf

BC857RA
BC857RA

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP Silicon Moisture Sensitivity Level: 1 ESD Rating Human Body Model: >4000 VLBC857CLT1GESD Rating Machine Model: >400 VS-LBC857CLT1G We declare that the material of product compliance with SeriesRoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Ch

 9.129. Size:176K  lrc
lbc857cdw1t1g.pdf

BC857RA
BC857RA

LESHAN RADIO COMPANY, LTD.Dual General PurposeLBC85** DW1T1GTransistorsS-LBC85** DW1T1G65These transistors are designed for general purpose amplifier4applications. They are housed in the SOT363/SC88 which isdesigned for low power surface mount applications.1We declare that the material of product compliance with RoHS requirements.23S- Prefix for Automotive an

 9.130. Size:134K  lrc
lbc857btt1g.pdf

BC857RA
BC857RA

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC857ATT1GPNP Silicon SeriesThese transistors are designed for general purpose amplifierS-LBC857ATT1Gapplications. They are housed in the SC-89 package which is designed Seriesfor low power surface mount applications.Features Pb-Free Packages are Available S- Prefix for Automotive and Other Applications Requiri

 9.131. Size:275K  lrc
lbc857cwt1g.pdf

BC857RA
BC857RA

LESHAN RADIO COMPANY, LTD.LBC856AWT1G, BWT1GGeneral Purpose TransistorsLBC857AWT1G, BWT1GCWT1GPNP SiliconLBC858AWT1G, BWT1GThese transistors are designed for general purposeCWT1Gamplifier applications. They are housed in the SOT323/S-LBC856AWT1G, BWT1GSC70 which is designed for low power surface mountapplications. S-LBC857AWT1G, BWT1GFeaturesCWT1GWe declare t

 9.132. Size:234K  lrc
lbc856alt1g lbc856alt3g lbc856blt1g lbc856blt3g lbc857alt1g lbc857alt1g lbc857blt1g lbc857blt3g lbc857clt1g lbc857clt1g.pdf

BC857RA
BC857RA

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP Silicon Moisture Sensitivity Level: 1 ESD Rating Human Body Model: >4000 VLBC857CLT1GESD Rating Machine Model: >400 VS-LBC857CLT1G We declare that the material of product compliance with SeriesRoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Ch

 9.133. Size:158K  lrc
lbc856alt1g lbc856blt1g lbc857alt1g lbc857blt1g lbc857clt1g lbc858alt1g lbc858blt1g lbc858clt1g lbc859blt1g lbc859clt1g.pdf

BC857RA
BC857RA

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC857CLT1GPNP Silicon SeriesS-LBC857CLT1G Moisture Sensitivity Level: 1 Series ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V We declare that the material of product compliance with 3RoHS requirements. S- Prefix for Automotive and Other Applications Requiring 1Unique Sit

 9.134. Size:182K  lrc
lbc856bdw1t1g lbc857bdw1t1g lbc857cdw1t1g lbc858bdw1t1g lbc858cdw1t1g lbc856adw1t1g.pdf

BC857RA
BC857RA

LESHAN RADIO COMPANY, LTD.Dual General PurposeLBC85** DW1T1GTransistorsS-LBC85** DW1T1GThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT363/SC88 which isdesigned for low power surface mount applications.654We declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other A

 9.135. Size:254K  lrc
lbc856awt1g lbc856bwt1g lbc857awt1g lbc857bwt1g lbc857cwt1g lbc858awt1g lbc858bwt1g lbc858cwt1g.pdf

BC857RA
BC857RA

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC856AWT1G, BWT1GLBC857AWT1G, BWT1GPNP SiliconThese transistors are designed for general purposeCWT1Gamplifier applications. They are housed in the SOT323/LBC858AWT1G, BWT1GSC70 which is designed for low power surface mountCWT1Gapplications.S-LBC856AWT1G, BWT1GFeaturesWe declare that the material of product

 9.136. Size:284K  lrc
lbc857awt1g.pdf

BC857RA
BC857RA

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC856AWT1G, BWT1GLBC857AWT1G, BWT1GPNP SiliconCWT1GThese transistors are designed for general purposeLBC858AWT1G, BWT1Gamplifier applications. They are housed in the SOT323/SC70 which is designed for low power surface mount CWT1Gapplications.S-LBC856AWT1G, BWT1GFeaturesS-LBC857AWT1G, BWT1GWe declare that the

 9.137. Size:194K  lrc
lbc856adw1t1g lbc856bdw1t1g lbc857bdw1t1g lbc857cdw1t1g lbc858bdw1t1g lbc858cdw1t1g.pdf

BC857RA
BC857RA

LESHAN RADIO COMPANY, LTD.Dual General PurposeLBC85** DW1T1GTransistorsS-LBC85** DW1T1G65These transistors are designed for general purpose amplifier4applications. They are housed in the SOT363/SC88 which isdesigned for low power surface mount applications.1We declare that the material of product compliance with RoHS requirements.23S- Prefix for Automotive an

 9.138. Size:160K  lrc
lbc857clt1g.pdf

BC857RA
BC857RA

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconLBC857CLT1G Series Moisture Sensitivity Level: 1S-LBC857CLT1G ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements.3 S- Prefix for Automotive and Other Applications Requiring Unique Site a

 9.139. Size:148K  lrc
lbc857blt1g.pdf

BC857RA
BC857RA

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC857CLT1GPNP Silicon Series Moisture Sensitivity Level: 1S-LBC857CLT1G ESD Rating Human Body Model: >4000 V SeriesESD Rating Machine Model: >400 V We declare that the material of product compliance with RoHS requirements.3 S- Prefix for Automotive and Other Applications Requiring Unique Site a

 9.140. Size:159K  lrc
lbc857alt1g.pdf

BC857RA
BC857RA

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC857CLT1GPNP Silicon SeriesS-LBC857CLT1G Moisture Sensitivity Level: 1 Series ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V We declare that the material of product compliance with 3RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site a

 9.141. Size:279K  lrc
lbc857bwt1g.pdf

BC857RA
BC857RA

LESHAN RADIO COMPANY, LTD.LBC856AWT1G,BWT1GGeneral Purpose TransistorsLBC857AWT1G,BWT1GPNP SiliconCWT1GLBC858AWT1G,BWT1GThese transistors are designed for general purposeamplifier applications. They are housed in the SOT323/CWT1GSC70 which is designed for low power surface mountS-LBC856AWT1G,BWT1Gapplications.S-LBC857AWT1G,BWT1GFeaturesWe declare that the mat

 9.142. Size:1157K  kexin
bc856w bc857w bc858w.pdf

BC857RA
BC857RA

SMD Type TransistorsPNP TransistorsBC856W,BC857W,BC858W(KC856W,KC857W,KC858W) Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications1.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitBC856W -80 Collector - Base Voltage BC857W VCBO -50BC858W -30BC856W -65 V Collector - Emitte

 9.143. Size:705K  kexin
bc857t.pdf

BC857RA

SMD Type TransistorsPNP TransistorsBC857T (KC857T)SOT-523 U nit: m m+0.11.6 -0.1+0.11.0 -0.1+0.050.2 -0.05 0.150.05 Features2 1 Ideally suited for automatic insertion For Switching and AF Amplifier Applications30.30.050.5+0.1-0.11. Base2. Emitter3. Collecter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collec

 9.144. Size:1324K  kexin
bc857s.pdf

BC857RA
BC857RA

SMD Type TransistorsPNP TransistorsBC857S (KC857S) Features High current gain Low collector-emitter saturation voltage For AF input stages and driver applications Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50VCEO -45 Collector - Emitter Voltage VVCES -50 Emitter - Base Voltage VEBO -5 Collector Cur

 9.145. Size:1596K  kexin
bc856 bc857 bc858.pdf

BC857RA
BC857RA

SMD Type TransistorsPNP TransistorsBC856~BC858 (KC856~KC858)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications1 2+0.1+0.050.95 -0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol BC856 BC857 BC858 Unit C

 9.146. Size:143K  panjit
bc856aw bc856bw bc857aw bc857bw bc857cw bc858aw bc858bw bc858cw.pdf

BC857RA
BC857RA

BC856AW ~ BC859CWPNP GENERAL PURPOSE TRANSISTORS30/45/65 Volts POWER 250 mWattsVOLTAGEFEATURES General purpose amplifier applications PNP epitaxial silicon, planar design Collector current IC = 100mA Complimentary (NPN) Devices : BC846AW/BC847AW/BC848AW/BC849BW Series Lead free in comply with EU RoHS 2011/65/EU directives Green molding compound as per IEC

 9.147. Size:211K  panjit
bc857bs.pdf

BC857RA
BC857RA

BC857BSPNP GENERAL PURPOSE DUALTRANSISTORSVOLTAGE 45 Volt POWER 150 mWattFEATURES General purpose amplifier applications PNP epitaxial silicon, planar design Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standardMECHANICAL DATA Case: SOT-363, Plastic Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0

 9.148. Size:176K  panjit
bc856a bc857a bc858a bc856b bc857b bc858b bc859b bc857c bc858c bc859c.pdf

BC857RA
BC857RA

BC856 SERIESPNP GENERAL PURPOSE TRANSISTORSPOWER 330 mWattVOLTAGE 30/45/65 VoltFEATURES0.120(3.04) General Purpose Amplifier Applications0.110(2.80) Collector Current IC = -100mA Complimentary (PNP) Devices : BC846/BC847/BC848/BC849Series Lead free in compliance with EU RoHS 2011/65/EU directive0.056(1.40)0.047(1.20) Green molding compound as per IEC61

 9.149. Size:140K  comchip
bc856cw-g bc857cw-g.pdf

BC857RA
BC857RA

Small Signal TransistorBC856AW-G Thru. BC858CW-G (PNP)RoHS DeviceFeatures -Ideally suited for automatic insertion -For Switching and AF Amplifier ApplicationsSOT-323 -Power dissipationPCM: 0.15W (@TA=25C)0.087 (2.20)0.079 (2.00) -Collector current3ICM: -0.1A -Collector-base voltage0.053(1.35)0.045(1.15)VCBO: BC856W= -80VBC857W= -50V1 20.006 (0.15)BC85

 9.150. Size:140K  comchip
bc858aw-g bc857aw-g.pdf

BC857RA
BC857RA

Small Signal TransistorBC856AW-G Thru. BC858CW-G (PNP)RoHS DeviceFeatures -Ideally suited for automatic insertion -For Switching and AF Amplifier ApplicationsSOT-323 -Power dissipationPCM: 0.15W (@TA=25C)0.087 (2.20)0.079 (2.00) -Collector current3ICM: -0.1A -Collector-base voltage0.053(1.35)0.045(1.15)VCBO: BC856W= -80VBC857W= -50V1 20.006 (0.15)BC85

 9.151. Size:140K  comchip
bc858bw-g bc857bw-g.pdf

BC857RA
BC857RA

Small Signal TransistorBC856AW-G Thru. BC858CW-G (PNP)RoHS DeviceFeatures -Ideally suited for automatic insertion -For Switching and AF Amplifier ApplicationsSOT-323 -Power dissipationPCM: 0.15W (@TA=25C)0.087 (2.20)0.079 (2.00) -Collector current3ICM: -0.1A -Collector-base voltage0.053(1.35)0.045(1.15)VCBO: BC856W= -80VBC857W= -50V1 20.006 (0.15)BC85

 9.152. Size:685K  slkor
bc856w-bc857w-bc858w.pdf

BC857RA
BC857RA

BC856W-BC858WPlastic-Encapsulate TransistorsTRANSISTOR (PNP) FEATURES SOT-323 Ideally suited for automatic insertion For Switching and AF Amplifier Applications 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER 3. COLLECTOR Symbol Parameter Value Unit Collector-Base Voltage BC856W -80 VCBO V BC857W -50 BC858W -30 Collector-Emitter Voltage

 9.153. Size:1882K  slkor
bc856 bc857 bc858.pdf

BC857RA
BC857RA

BC856-BC858 TRANSISTOR PNP SOT-23 FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit Collector-Base Voltage BC856 -80 VCBO V BC857 -50 BC858 -30 Collector-Emitter Voltage BC856 -65 VCEO V BC857 -45 B

 9.154. Size:688K  slkor
bc856aw 857aw 858aw bc856bw 857bw 858bw bc857cw bc858cw.pdf

BC857RA
BC857RA

BC856W-BC858WPlastic-Encapsulate TransistorsTRANSISTOR (PNP) FEATURES SOT-323 Ideally suited for automatic insertion For Switching and AF Amplifier Applications1. BASE 2. EMITTER3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit Collector-Base Voltage BC856W -80VCBO V BC857W -50BC858W -30Collector-Emitter Voltage BC8

 9.155. Size:447K  umw-ic
bc856a bc856b bc857a bc857b bc857c bc858a bc858b bc858c.pdf

BC857RA
BC857RA

RUMW UMW BC857SOT-23 Plastic-Encapsulate Transistors BC856A, B TRANSISTOR (PNP) BC857A, B,C SOT-23 BC858A, B,C FEATURES 1. BASE 2. EMITTER Ideally suited for automatic insertion 3. COLLECTOR For Switching and AF Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage BC856 -80 V B

 9.156. Size:781K  anbon
bc856a bc856b bc857a bc857b bc857c bc858a bc858b bc858c bc859b bc859c.pdf

BC857RA
BC857RA

BC856A/B-BC857A/B/CBC858A/B/C-BC859B/CGeneral Purpose TransistorPNP Silicon Package outlineFeatures Moisture sensitivity level: 1SOT-23 ESD rating human body model: >4000 V,machine model: >400 V Epitaxial plana chip construction Ideal for medium power application and switching Capable of 225mW power dissipation. Lead-free parts for green partner, ex

 9.157. Size:498K  fuxinsemi
bc857bdw.pdf

BC857RA
BC857RA

 9.158. Size:2269K  high diode
bc856a bc856b bc857a bc857b bc857c bc858a bc858b bc858c.pdf

BC857RA
BC857RA

BC856-8SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( P NP )Features SOT- 23 Ideally suited for automatic insertion For Switching and AF Amplifier Applications Marking: BC856A=3A;BC856B=3B; BC857A=3E;BC857B=3F;BC857C=3G;BC858A=3J;BC858B=3K;BC858C=3L; CB EItem Symbol Unit Conditions ValueBC856Collector-Base Voltage -80 -50 BC857 V VC

 9.159. Size:6174K  msksemi
bc856a bc856b bc857a bc857b bc857c bc858a bc858b bc858c.pdf

BC857RA
BC857RA

www.msksemi.comBC856/57/58ABCSemiconductor CompianceSemiconductor Compiance TRANSISTOR (PNP)1. BASE 2. EMITTER FEATURES 3. COLLECTOR Ideally suited for automatic insertion SOT-23 For Switching and AF Amplifier Applications DEVICE MARKING P/N MARK P/N MARK P/N MARKBC856A 3A BC856B 3BBC857A 3E BC857B 3F BC857C 3GBC858A 3J BC858B 3K BC858C 3LMAXIMUM RATINGS (T

 9.160. Size:254K  powersilicon
bc856a bc856b bc857a bc857b bc857c bc858a bc858b bc858c.pdf

BC857RA
BC857RA

DATA SHEET BC856A/B,BC857A/B/C,BC858A/B/C PNP GENERAL PURPOSE TRANSISTOR VOLTAGE -30 ~ -65 V CURRENT -100 mA FEATURES PNP SILICON EPITAXIAL PLANAR TRANSISTOR FOR SWITCHING AND AMPLIFIER APPLICATIONS COLLECTOR CURRENT IC = -100mA LEAD FREE AND HALOGEN-FREE MECHANICAL DATA CASE: SOT-23 TERMINALS: SOLDERABLE PER MIL-STD-202G, METHOD 208 APPROX. WEIGHT: 0.008

 9.162. Size:135K  cn shandong jingdao microelectronics
bc856a bc857a bc858a bc856b bc857b bc858b bc857c bc858c.pdf

BC857RA
BC857RA

Jingdao Microelectronics co.LTD BC856 BC857 BC858 BC856 BC857 BC858SOT-23PNP TRANSISTOR3FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications 1MAXIMUM RATINGS (Ta=25 unless otherwise noted)Parameter Symbol Value Unit2 BC856 -801.BASECollectorBase VoltageV BC8

 9.164. Size:2188K  cn yongyutai
bc856a bc856b bc857a bc857b bc857c bc858a bc858b bc858c.pdf

BC857RA
BC857RA

BC856/BC857/BC858 TRANSI STOR (PNP)MARKING: Equivalent Circuit:SOT-231.BASE2.EMITTER3.COLLECTORFEATURES: Ideaiiy suited for automatic insertion For switching and AF amplifier applicationsMAXIMUM RATINGS (Ta=25 unless otherwise noted)Parameter Symbol Value UnitCollector-Base Voltage -80 BC856 VCBO -50 V BC857 -30 BC858Collector-Emitter Voltage -6

 9.165. Size:550K  cn zre
bc856a bc856b bc857a bc857b bc857c bc858a bc858b bc858c.pdf

BC857RA
BC857RA

BC856/BC857/BC858 TRANSISTOR(PNP)SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features Complementary to BC846/BC847/BC848 Power Dissipation of 200mW Ideally suited for automatic insertion For switching and AF amplifier applicationsMarking: Mechanical DataBC856A=3A BC856B=3B Small Outline Plastic PackageBC857A=

 9.166. Size:3051K  cn twgmc
bc856a bc856b bc856c bc857a bc857b bc857c bc858a bc858b bc858c bc859a bc859b bc859c bc860a bc860b bc860c.pdf

BC857RA
BC857RA

BC856 THRU BC860BC856 THRU BC860BC856 THRU BC860BC8 56 THRU BC8 60 TRANSISTOR(PNP)FEATURESSwitching and Amplifier Applications SOT-23 Suitable for automatic insertion in thick and thin-film circuits1BASE Low Noise: BC859, BC8602EMITTER 3COLLECTOR Complement to BC846 ... BC850MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collec

 9.167. Size:748K  cn twgmc
bc856 bc857 bc858 bc859 bc860.pdf

BC857RA
BC857RA

BC856-BC860BC856BC860 PNP Silicon Epitaxial Transistor for switching and amplifier applications1.BASE 2.EMITTER 3.COLLECTORSOT-23 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage BC856 -VCBO 80 V BC857, BC860 -VCBO 50 V BC858, BC859 -VCBO 30 V Collector Emitter Voltage BC856 -VCEO 65 V BC857, BC860 -VCEO 45 V B

 9.168. Size:276K  cn yangzhou yangjie elec
bc856aw bc856bw bc857aw bc857bw bc857cw bc858aw bc858bw bc858cw.pdf

BC857RA
BC857RA

RoHS RoHSCOMPLIANT COMPLIANTBC856AW THRU BC858CW PNP Transistor Features Epoxy meets UL-94 V-0 flammability ratingHalogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package: SOT-323 Molding compound meets UL 94 V-

 9.169. Size:253K  cn yangzhou yangjie elec
bc856awq bc856bwq bc857awq bc857bwq bc857cwq bc858awq bc858bwq bc858cwq.pdf

BC857RA
BC857RA

RoHS RoHSCOMPLIANT COMPLIANTBC856AWQ THRU BC858CWQ PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 Part no. with suffix Q means AEC-Q101 qualified Applications PNP General purpose switching and amplification Mechanical Data Case: SOT-323 Terminals: Tin plated

 9.170. Size:608K  cn yangzhou yangjie elec
bc857bs.pdf

BC857RA
BC857RA

RoHS COMPLIANT BC857BSDual PNP Small Signal Transistor Features Epoxy meets UL-94 V-0 flammability rating Surface mount package ideally Suited for Automatic Insertion PNP Mechanical Data ackage: SOT-363P Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking: 3F Equivalent circuit 1 / 5 S-S2532 Yangzhou

 9.171. Size:299K  cn yangzhou yangjie elec
bc856a bc856b bc857a bc857b bc857c bc858a bc858b bc858c.pdf

BC857RA
BC857RA

RoHS RoHSCOMPLIANT COMPLIANTBC856/BC857/BC858 PNP Transistor Features Epoxy meets UL-94 V-0 flammability ratingMoisture Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package: SOT-23 Molding compound meets UL 94 V-0 flammability rating,RoHS-compliant, halogen-free Terminals: T

 9.172. Size:283K  cn yangzhou yangjie elec
bc856aw bc856bw bc857aw bcb57bw bc857cw bc858aw bc858bw bc858cw.pdf

BC857RA
BC857RA

RoHS RoHSCOMPLIANT COMPLIANTBC856AW THRU BC858CW PNP Transistor Features Epoxy meets UL-94 V-0 flammability ratingMoisture Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package: SOT-323 Molding compound meets UL 94 V-0 flammability rating, RoHS-compliant, halogen-free Termina

 9.173. Size:270K  cn yangzhou yangjie elec
bc856aq bc856bq bc857aq bc857bq bc857cq bc858aq bc858bq bc858cq.pdf

BC857RA
BC857RA

RoHS COMPLIANT BC856Q THRU BC858Q PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 High Conductance Part no. with suffix Q means AEC-Q101 qualified Applications General purpose switching and amplification Mechanical Data : SOT-23 Case Terminals: Tin plated

 9.174. Size:1082K  cn dowo
bc856a bc857a bc858a bc856b bc857b bc858b bc857c bc858c.pdf

BC857RA
BC857RA

BC856-BC858BC856A, B TRANSISTOR (PNP)BC857A, B,CSOT-23 BC858A, B,C FEATURES 1. BASE 2. EMITTER Ideally suited for automatic insertion 3. COLLECTOR For Switching and AF Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage BC856 -80V BC857 -50BC858 -30VCEO Collector-Emitter Voltage B

 9.175. Size:629K  cn doeshare
bc856a bc857a bc858a bc856b bc857b bc858b bc857c bc858c.pdf

BC857RA
BC857RA

BC856/BC857/BC858 BC856/BC857/BC858 SOT-23 Plastic-Encapsulate Transistors (PNP) General description SOT-23 Plastic-Encapsulate Transistors (PNP) FEATURES Complementary to BC846/BC847/BC848 Power Dissipation of 200mW Ideally suited for automatic insertion For switching and AF amplifier applications SOT-23 Small Outline Plastic Package DEVICE MARKING COD

 9.176. Size:1243K  cn cbi
bc856w bc857w bc858w.pdf

BC857RA
BC857RA

Plastic-Encapsulate TransistorsTRANSISTOR (PNP) FEATURES SOT-323 Ideally suited for automatic insertion For Switching and AF Amplifier Applications 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER 3. COLLECTOR Symbol Parameter Value Unit Collector-Base Voltage BC856W -80 VCBO V BC857W -50 BC858W -30 Collector-Emitter Voltage BC856W -65

 9.177. Size:432K  cn cbi
bc857dw.pdf

BC857RA
BC857RA

SOT-363 Plastic-Encapsulate Transistors DUAL TRANSISTOR (PNP+PNP) BC857DWSOT-363 FEATURES Two transistors in one package Reduces number of components and board space No mutual interference between the transistors MARKING: 3C MAXIMUM RATINGS(Ta=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector- Base Voltage -50 V VCEO Collector-Emitter Voltage

 9.178. Size:409K  cn cbi
bc856a bc856b bc856c bc857a bc857b bc857c bc858a bc858b bc858c bc859a bc859b bc859c bc860a bc860b bc860c.pdf

BC857RA
BC857RA

BC856BC860 PNP Silicon Epitaxial Transistor for switching and amplifier applications1.BASE 2.EMITTER 3.COLLECTORSOT-23 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage BC856 -VCBO 80 V BC857, BC860 -VCBO 50 V BC858, BC859 -VCBO 30 V Collector Emitter Voltage BC856 -VCEO 65 V BC857, BC860 -VCEO 45 V BC858, BC859 -

 9.179. Size:327K  cn fosan
bc856a bc857a bc858a bc856b bc857b bc858b bc857c bc858c.pdf

BC857RA
BC857RA

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDBC856/BC857/BC858FEATURES PNP General Purpose TransistorMAXIMUM RATINGS Characteristic Symbol GM856A,B GM857A,B,C GM858A,B,C Unit (BC856A,B) (BC857A,B,C) (BC858A,B,C) Collector-Emitter VoltageV -65 -45 -30 VdcCEOC

 9.180. Size:486K  cn hottech
bc856a bc856b bc857a bc857b bc857c bc858a bc858b bc858c.pdf

BC857RA
BC857RA

Plastic-Encapsulate Transistors(PNP)FEATURESBC856A/B (PNP)BC857A/B/CIdeally suited for automatic insertionBC858A/B/C (PNP)For Switching and AF Amplifier ApplicationsMarkingBC856A BC856B BC857A BC857B3A 3B 3E 3FBC857C BC858A BC858B BC858C1. BASE3G 3J 3K 3L2. EMITTER SOT-233. COLLECTOMAXIMUM RATINGS (TA=25 unless otherwise noted)Parameter Symbol Value UnitBC8

 9.181. Size:646K  cn hottech
bc857a bc857b bc857c.pdf

BC857RA
BC857RA

BC857BIPOLAR TRANSISTOR (PNP)FEATURES Complementary to BC847 Ideally suited for automatic insertion For switching and AF amplifier applications Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless othe

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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