PBSS4360X Datasheet, Equivalent, Cross Reference Search
Type Designator: PBSS4360X
SMD Transistor Code: S40
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 75 MHz
Collector Capacitance (Cc): 11 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: SOT89
PBSS4360X Transistor Equivalent Substitute - Cross-Reference Search
PBSS4360X Datasheet (PDF)
pbss4360x.pdf
PBSS4360X60 V, 3 A NPN low VCEsat BISS transistor9 June 2017 Product data sheet1. General descriptionNPN low VCEsat Breakthrough in Smal Signal (BISS) transitor in a medium power SOT89 (SC-62)flat lead Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS5360X2. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capab
pbss4360pas.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pbss4360z.pdf
PBSS4360Z60 V, 3 A NPN low VCEsat (BISS) transistor26 February 2014 Product data sheet1. General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium powerSOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS5360Z.2. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capa
pbss4350d.pdf
DISCRETE SEMICONDUCTORS DATA SHEETfpageM3D302PBSS4350D50 V low VCEsat NPN transistorProduct data sheet 2001 Jul 13Supersedes data of 2001 Jan 26NXP Semiconductors Product data sheet50 V low VCEsat NPN transistorPBSS4350DFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltageSYMBOL PARAMETER MAX. UNIT High current capabilityVCEO collector-emit
pbss4330pa.pdf
PBSS4330PA30 V, 3 A NPN low VCEsat (BISS) transistorRev. 01 19 April 2010 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.PNP complement: PBSS5330PA.1.2 Features and benefits
pbss4350x.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D109PBSS4350X50 V, 3 ANPN low VCEsat (BISS) transistorProduct specification 2004 Nov 04Supersedes data of 2003 Nov 21Philips Semiconductors Product specification50 V, 3 APBSS4350XNPN low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA SOT89 (SC-62) packageSYMBOL PARAMETER MAX. UNIT Low collector-emitte
pbss4350z.pdf
DISCRETE SEMICONDUCTORS DATA SHEETndbook, halfpageM3D087PBSS4350Z50 V low VCEsat NPN transistorProduct data sheet 2003 May 13Supersedes data of 2003 Jan 20NXP Semiconductors Product data sheet50 V low VCEsat NPN transistorPBSS4350ZFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltageSYMBOL PARAMETER MAX. UNIT High collector current capability
pbss4320t.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPBSS4320T20 V NPN low VCEsat transistorProduct data sheet 2004 Mar 18Supersedes data of 2002 Aug 08 NXP Semiconductors Product data sheet20 V NPN low VCEsat transistorPBSS4320TFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat and SYMBOL PARAMETER MAX. UNITcorresponding low RCEsatVCEO collector-emitter v
pbss4350d 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D302PBSS4350DNPN transistorProduct specification 2000 Mar 08Philips Semiconductors Product specificationNPN transistor PBSS4350DFEATURES PINNING High current capabilitiesPIN DESCRIPTION Low VCEsat.1 collector2 collectorAPPLICATIONS3 base Heavy duty battery powered equipment (Automotive, 4 emitterT
pbss4350t.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPBSS4350T50 V; 3 A NPN low VCEsat (BISS) transistorProduct data sheet 2004 Jan 09Supersedes data of 2002 Aug 08 NXP Semiconductors Product data sheet50 V; 3 A NPN low VCEsat PBSS4350T(BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat and SYMBOL PARAMETER MAX. UNITcorresponding low RCEs
pbss4350d.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pbss4330pa.pdf
PBSS4330PA30 V, 3 A NPN low VCEsat (BISS) transistor7 April 2015 Product data sheet1. General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in anultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package withmedium power capability.PNP complement: PBSS5330PA.2. Features and benefits Low collector-emitter saturatio
pbss4350x.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pbss4350spn.pdf
PBSS4350SPN50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistorRev. 01 5 April 2007 Product data sheet1. Product profile1.1 General descriptionNPN/PNP double low VCEsat Breakthrough In Small Signal (BISS) transistor in a mediumpower Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package NPN/NPN PNP/PNPcomplement complementNXP NamePBSS4350
pbss4350z.pdf
DISCRETE SEMICONDUCTORS DATA SHEETndbook, halfpageM3D087PBSS4350Z50 V low VCEsat NPN transistorProduct data sheet 2003 May 13Supersedes data of 2003 Jan 20NXP Semiconductors Product data sheet50 V low VCEsat NPN transistorPBSS4350ZFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltageSYMBOL PARAMETER MAX. UNIT High collector current capability
pbss4350ss.pdf
PBSS4350SS50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistorRev. 01 3 April 2007 Product data sheet1. Product profile1.1 General descriptionNPN/NPN double low VCEsat Breakthrough In Small Signal (BISS) transistor in a mediumpower Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package NPN/PNP PNP/PNPcomplement complementNXP NamePBSS4350S
pbss4320x.pdf
DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D109PBSS4320X20 V, 3 A NPN low VCEsat (BISS) transistorProduct data sheet 2004 Nov 03Supersedes data of 2003 Dec 15NXP Semiconductors Product data sheet20 V, 3 A PBSS4320XNPN low VCEsat (BISS) transistorQUICK REFERENCE DATAFEATURES SOT89 (SC-62) packageSYMBOL PARAMETER MAX. UNIT Low collector-emitter sa
pbss4330x.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D109PBSS4330X30 V, 3 ANPN low VCEsat (BISS) transistorProduct specification 2004 Dec 06Supersedes data of 2003 Nov 28Philips Semiconductors Product specification30 V, 3 APBSS4330XNPN low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA SOT89 (SC-62) packageSYMBOL PARAMETER MAX. UNIT Low collector-emitte
pbss4330pas.pdf
PBSS4330PAS30 V, 3 A NPN low VCEsat (BISS) transistor11 September 2014 Product data sheet1. General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultrathin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plasticpackage with medium power capability and visible and soldarable side pads.PNP complement: PBSS5330PAS2. F
pbss4320t.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pbss4350t.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pbss4350t.pdf
SMD Type TransistorsNPN TransistorsPBSS4350T (KBSS4350T)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.1 Features3 High collector current capability High collector current gain Improved efficiency due to reduced heat generation.1 2+0.1+0.050.95 -0.1 0.1 -0.01 Low collector-emitter saturation voltage VCEsat and+0.11.9 -0.13 corresponding low RC
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