PBSS5250TH Datasheet. Specs and Replacement
Type Designator: PBSS5250TH
SMD Transistor Code: FH*
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 35 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Package: SOT23
PBSS5250TH Substitution
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PBSS5250TH datasheet
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DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS5250X 50 V, 2 A PNP low VCEsat (BISS) transistor Product data sheet 2004 Nov 04 Supersedes data of 2003 Jun 17 NXP Semiconductors Product data sheet 50 V, 2 A PBSS5250X PNP low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA SOT89 (SC-62) package SYMBOL PARAMETER MAX. UNIT Low collector-emitter sat... See More ⇒
Detailed specifications: PBHV9540X, PBSS2515MB, PBSS4160X, PBSS4220PANS, PBSS4260PANS, PBSS4360PAS, PBSS4360X, PBSS5220PAPS, D667, PBSS5255PAPS, PBSS5260PAPS, PBSS5350TH, PBSS5360PAS, PBSS5360X, PDTA114EQA, PDTA114TMB, PDTA114YQA
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