PBSS5260PAPS Datasheet. Specs and Replacement

Type Designator: PBSS5260PAPS

SMD Transistor Code: 3H

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.37 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 16 pF

Forward Current Transfer Ratio (hFE), MIN: 170

Noise Figure, dB: -

Package: SOT1118D

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PBSS5260PAPS datasheet

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PBSS5260PAPS

PBSS5260PAPS 60 V, 2 A PNP/PNP low VCEsat (BISS) double transistor 15 December 2015 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN/NPN complement PBSS4260PANS 2. Features and benefits... See More ⇒

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PBSS5260PAPS

PBSS5260PAP 60 V, 2 A PNP/PNP low VCEsat (BISS) transistor 12 December 2012 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement PBSS4260PANP. NPN/NPN complement PBSS4260PAN. 2. Features and benefits Very low collect... See More ⇒

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PBSS5260PAPS

PBSS5260QA 60 V, 1.7 A PNP low VCEsat (BISS) transistor 28 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN complement PBSS4260QA. 2. Features and benefits Very low collector-emitte... See More ⇒

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PBSS5260PAPS

DISCRETE SEMICONDUCTORS DATA SHEET PBSS5240T 40 V, 2 A PNP low VCEsat (BISS) transistor Product data sheet 2004 Jan 15 Supersedes data of 2001 Oct 31 NXP Semiconductors Product data sheet 40 V, 2 A PBSS5240T PNP low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage SYMBOL PARAMETER MAX. UNIT High current capability VCEO c... See More ⇒

Detailed specifications: PBSS4160X, PBSS4220PANS, PBSS4260PANS, PBSS4360PAS, PBSS4360X, PBSS5220PAPS, PBSS5250TH, PBSS5255PAPS, BDT88, PBSS5350TH, PBSS5360PAS, PBSS5360X, PDTA114EQA, PDTA114TMB, PDTA114YQA, PDTA115EMB, PDTA115TMB

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