BCP55-10HE3 Datasheet, Equivalent, Cross Reference Search
Type Designator: BCP55-10HE3
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1.5 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 63
Noise Figure, dB: -
Package: SOT223
BCP55-10HE3 Transistor Equivalent Substitute - Cross-Reference Search
BCP55-10HE3 Datasheet (PDF)
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www.msksemi.comBCP54 BCP55 BCP56Semiconductor CompianceSemiconductor Compiance BCP54,55,56 TRANSISTOR (NPN) SOT-223 FEATURES For AF driver and output stages 11. BASE High collector current 22. COLLECTOR Low collector-emitter saturation voltage 33. EMITTER Complementary types: BCP51 ... BCP53 (PNP) MAXIMUM RATINGS (Ta=25 unless otherwise noted) Sym
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .