All Transistors. MMBT3904-MS Datasheet

 

MMBT3904-MS Datasheet, Equivalent, Cross Reference Search


   Type Designator: MMBT3904-MS
   SMD Transistor Code: 1AM
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 300 MHz
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT-23

 MMBT3904-MS Transistor Equivalent Substitute - Cross-Reference Search

   

MMBT3904-MS Datasheet (PDF)

 ..1. Size:4184K  msksemi
mmbt3904-ms.pdf

MMBT3904-MS
MMBT3904-MS

www.msksemi.comMMBT3904-MSSemiconductor CompianceSemiconductor CompianceTRANSISTOR (NPN)FEATURES Complementary to MMBT3906-MSMAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE2. EMITTERSOT23 MARKING: 1AM3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Volta

 5.1. Size:1137K  kexin
mmbt3904-d.pdf

MMBT3904-MS
MMBT3904-MS

SMD Type TransistorsNPN Transistors(KMBT3904-D)MMBT3904-DSOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13Features Complementary to MMBT3906-D1 2 Marking:1AM+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector - Base Voltage VCBO 60 VCollector - Emitter Voltage VC

 5.2. Size:103K  comchip
mmbt3904-hf.pdf

MMBT3904-MS
MMBT3904-MS

General Purpose TransistorMMBT3904-HF (NPN)RoHS DeviceHalogen FreeSOT-23Features0.118(3.00)0.110(2.80) -Epitaxial planar die construction3 -As complementary type, the PNP0.055(1.40)0.047(1.20)transistor MMBT3904-HF is recommended1 20.006(0.15)0.079(2.00)Collector0.002(0.05)0.071(1.80)30.041(1.05) 0.100(2.55)0.035(0.90) 0.089(2.25)1Base0.004(0.10

 5.3. Size:115K  comchip
mmbt3904-g.pdf

MMBT3904-MS
MMBT3904-MS

General Purpose TransistorMMBT3904-G (NPN)RoHS DeviceFeaturesSOT-23 -Epitaxial planar die construction0.120 (3.04)0.110 (2.80) -As complementary type, the PNP3transistor MMBT3904-G is recommended0.055 (1.40)0.047 (1.20)1 20.080 (2.04)0.070 (1.78)Collector0.007 (0.18)3 0.003 (0.08)0.044 (1.11)0.104 (2.64)0.035 (0.89)0.083 (2.10)1Base0.004 (0.100)

 5.4. Size:431K  powersilicon
mmbt3904-t3 mmbt3904g-t3.pdf

MMBT3904-MS
MMBT3904-MS

MMBT3904GENERAL PURPOSE TRANSISTORS NPN Silicon FEATURES NPN Silicon Epitaxial Planar Transistor For Switching And Amplifier Applications Collector-emitter Voltage VCE=40V Collector Current IC=200mA MECHANICAL DATA C E Available in SOT-23 Package SolderabilityMIL-STD-202, Method 208 Full RoHS Compliance B ORDERING INFORMATION PART NUM

 5.5. Size:905K  cn salltech
mmbt3904-l mmbt3904-h.pdf

MMBT3904-MS
MMBT3904-MS

 5.6. Size:796K  cn shandong jingdao microelectronics
mmbt3904-l mmbt3904-h.pdf

MMBT3904-MS
MMBT3904-MS

Jingdao Microelectronics co.LTD MMBT3904MMBT3904SOT-23NPN TRANSISTOR3FEATURES Complementary to MMBT3906 1MAXIMUM RATINGS (Ta=25 unless otherwise noted)2SymbolParameter Value Unit1.BASECollectorBase Voltage VCBO 60 V2.EMITTERCollectorEmitter Voltage VCEO 40 V3.COLLECTOREmitterBase Voltage VEB

Datasheet: BC507FA , BC507FB , BC508 , BC508A , BC508B , BC508C , BC508F , BC508FA , 2N2222 , BC508FC , BC509 , BC509B , BC509C , BC509F , BC509FB , BC509FC , BC510 .

 

 
Back to Top