2SA1246S PDF and Equivalents Search

 

2SA1246S Specs and Replacement

Type Designator: 2SA1246S

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.4 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 15 V

Maximum Collector Current |Ic max|: 0.15 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 9 pF

Forward Current Transfer Ratio (hFE), MIN: 140

Noise Figure, dB: -

Package: TO92

 2SA1246S Substitution

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2SA1246S datasheet

 7.1. Size:41K  sanyo

2sa1246 2sc3114 2sc3114.pdf pdf_icon

2SA1246S

Ordering number ENN1047C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1246/2SC3114 High-VEBO, AF Amp Applications Features Package Dimensions High VEBO. unit mm Wide ASO and highly resistant to breakdown. 2003B [2SA1246/2SC3114] 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 2 3 1 Emitter 2 Collector ( ) 2SA1246 3 Base 1.3 1.3 SANYO NP Specifications Absolute Maxim... See More ⇒

 8.1. Size:212K  toshiba

2sa1242.pdf pdf_icon

2SA1246S

2SA1242 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1242 Strobe Flash Applications Unit mm Medium Power Amplifier Applications Excellent hFE linearity h = 100 to 320 (V = -2 V, I = -0.5 A) FE (1) CE C h = 70 (min) (V = -2 V, I = -4 A) FE (2) CE C Low collector saturation voltage V = -1.0 V (max) (I = -4 A, I = -0.1 A) CE (sat) C B ... See More ⇒

 8.2. Size:309K  toshiba

2sa1245.pdf pdf_icon

2SA1246S

2SA1245 TOSHIBA Transistor Silicon PNP Epitaxial Planar Type 2SA1245 High Frequency Amplifier and Switching Applications Unit mm VHF UHF Band Low Noise Amplifier Applications Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -15 V Collector-emitter voltage VCEO -8 V Emitter-base voltage VEBO -2 V Collector current IC -30 mA ... See More ⇒

 8.3. Size:295K  toshiba

2sa1244.pdf pdf_icon

2SA1246S

2SA1244 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1244 High Current Switching Applications Unit mm Low collector saturation voltage VCE (sat) = -0.4 V (max) (I = -3 A) C High speed switching time t = 1.0 s (typ.) stg Complementary to 2SC3074 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -60... See More ⇒

Detailed specifications: 2SA1242Y, 2SA1243, 2SA1244, 2SA1244O, 2SA1244Y, 2SA1245, 2SA1246, 2SA1246R, BD140, 2SA1246T, 2SA1246U, 2SA1247, 2SA1248, 2SA1248R, 2SA1248S, 2SA1248T, 2SA1249

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