2SCR346P Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SCR346P
SMD Transistor Code: HK
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 82
Noise Figure, dB: -
Package: SOT89
2SCR346P Transistor Equivalent Substitute - Cross-Reference Search
2SCR346P Datasheet (PDF)
2scr346p.pdf
2SCR346PDatasheetNPN 100mA 400V Middle Power TransistorlOutlinel SOT-89 Parameter Value SC-62 VCEO400VIC100mAMPT3lFeatures lInner circuitl l1)Complementary PNP Types:2SAR340P2)Low VCE(sat)VCE(sat)=300mV(Max)(IC/IB=20mA/2mA)lApplicationlLOW FREQUENCY AMPLIFIERlPackaging specificationslPackage Taping Re
2scr375p.pdf
2SCR375PDatasheetMiddle Power Transistor(120V/1.5A)lOutlinel SOT-89 Parameter Value SC-62 VCEO120VIC1.5AMPT3lFeatures lInner circuitl lLow saturation voltageVCE(sat)=300mV(Max.)(IC/IB=800mA/80mA)lApplicationlLOW FREQUENCY AMPLIFIERlPackaging specificationslBasicPackage Taping Reel size Tape widthPar
2scr372p.pdf
Data SheetMidium Power Transistors (120V / 700mA) 2SCR372P Structure Dimensions (Unit : mm)NPN Silicon epitaxial planar transistorMPT3 FeaturesLow saturation voltageVCE (sat) = 0.3V (Max.) (IC / IB= 500mA / 50mA)(1) (2) (3)(1) Base(2) Collector ApplicationsAbbreviated symbol : GX(3) EmitterDriver Packaging specifications Inner circuit (Unit :
2scr372pfra.pdf
2SCR372P2SCR372PFRADatasheetNPN 700mA 120V Middle Power TransistorAEC-Q101 QualifiedlOutline MPT3Parameter ValueVCEO120VBase IC700mACollector Emitter 2SCR372PFRA2SCR372P lFeatures(SC-62) 1) Suitable for Middle Power Driver3) Low VCE(sat)VCE(sat)=0.30V(Max.)(IC/IB=500mA/50mA)4) Lead Free/RoHS Compliant.lInner circuitCollector lApplic
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