2SA1162G Datasheet. Specs and Replacement
Type Designator: 2SA1162G
SMD Transistor Code: SG
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 80 MHz
Collector Capacitance (Cc): 7 max pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: SOT23
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2SA1162G datasheet
..1. Size:759K cn shikues
2sa1162o 2sa1162y 2sa1162g.pdf 
2SA1162 Silicon Epitaxial Planar Transistor FEATURES Low noise NF=1dB(Typ),10dB(Max). Complementary to 2SC2712. Small package. APPLICATIONS General purpose application. ORDERING INFORMATION MAXIMUM RATING @ Ta=25 unless otherwise specified REV.08 1 of 4 2SA1162 ELECTRICAL CHARACTERISTICS @ Ta=25 unless otherwise specified REV.08 2 of 4 2SA1162 TYPIC... See More ⇒
0.1. Size:45K onsemi
2sa1162gt1-d.pdf
2SA1162GT1, 2SA1162YT1 General Purpose Amplifier Transistors PNP Surface Mount Moisture Sensitivity Level 1 http //onsemi.com ESD Rating TBD COLLECTOR 3 MAXIMUM RATINGS (TA = 25 C) Rating Symbol Value Unit Collector-Base Voltage V(BR)CBO 50 Vdc Collector-Emitter Voltage V(BR)CEO 50 Vdc Emitter-Base Voltage V(BR)EBO 7.0 Vdc 2 1 BASE EMITTER Collector Current - Continuo... See More ⇒
7.1. Size:216K toshiba
2sa1162-o 2sa1162-y 2sa1162-gr.pdf
2SA1162 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1162 Audio Frequency General Purpose Amplifier Applications Unit mm High voltage and high current VCEO = -50 V, IC = -150 mA (max) Excellent hFE linearity hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) High hFE hFE = 70 to 400 Low noise NF = 1dB (typ.), 10dB (max) Complementar... See More ⇒
7.2. Size:172K toshiba
2sa1162.pdf
2SA1162 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1162 Audio Frequency General Purpose Amplifier Applications Unit mm High voltage and high current VCEO = -50 V, IC = -150 mA (max) Excellent hFE linearity hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) High hFE hFE = 70 400 Low noise NF = 1dB (typ.), 10dB (max) Complementary t... See More ⇒
7.3. Size:192K mcc
2sa1162-gr.pdf
MCC 2SA1162-O TM Micro Commercial Components 20736 Marilla Street Chatsworth 2SA1162-Y Micro Commercial Components CA 91311 Phone (818) 701-4933 2SA1162-GR Fax (818) 701-4939 Features Capable of 0.15Watts of Power Dissipation. PNP Silicon Collector-current 0.15A Collector-base Voltage -50V Plastic-Encapsulate Operating and storage junction temperature rang... See More ⇒
7.4. Size:192K mcc
2sa1162-o.pdf
MCC 2SA1162-O TM Micro Commercial Components 20736 Marilla Street Chatsworth 2SA1162-Y Micro Commercial Components CA 91311 Phone (818) 701-4933 2SA1162-GR Fax (818) 701-4939 Features Capable of 0.15Watts of Power Dissipation. PNP Silicon Collector-current 0.15A Collector-base Voltage -50V Plastic-Encapsulate Operating and storage junction temperature rang... See More ⇒
7.5. Size:192K mcc
2sa1162-y.pdf
MCC 2SA1162-O TM Micro Commercial Components 20736 Marilla Street Chatsworth 2SA1162-Y Micro Commercial Components CA 91311 Phone (818) 701-4933 2SA1162-GR Fax (818) 701-4939 Features Capable of 0.15Watts of Power Dissipation. PNP Silicon Collector-current 0.15A Collector-base Voltage -50V Plastic-Encapsulate Operating and storage junction temperature rang... See More ⇒
7.6. Size:326K secos
2sa1162.pdf
2SA1162 -0.15A, -50V PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES SOT-23 Low Noise NF=1 dB(Typ.), 10 dB(Max.) A Complements of the 2SC2712 L 3 3 MECHANICAL DATA Top View C B Case SOT-23, Molded Plastic 1 1 2 Weight 0.008 grams(approx.) 2 K ... See More ⇒
7.7. Size:1098K jiangsu
2sa1162.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors SOT-23 2SA1 162 TRANSISTOR (PNP) 3 FEATURES 1 . Low noise 2 . Complementary to 2SC2712 1. BASE . Small Package 2. EMITTER 3. COLLECTOR MARKING SO , SY , SG MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Coll... See More ⇒
7.8. Size:584K htsemi
2sa1162.pdf
2SA1 1 62 TRANSISTOR(PNP) SOT-23 FEATURES . Low noise NF= 1dB(Typ.),10dB (Max.) . Complementary to 2SC2712. 1. BASE . Small Package. 2. EMITTER 3. COLLECTOR MARKING SO , SY , SG MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC ... See More ⇒
7.9. Size:274K gsme
2sa1162.pdf
Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM1162 MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO -50 Vdc - ... See More ⇒
7.10. Size:217K lge
2sa1162 sot-23.pdf
2SA1162 SOT-23 Transistor(PNP) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features Low noise NF=1dB(Typ.)10dB(Max.) Complementary to 2SC2712 Small package MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V Dimensions in inches and (millimeters) VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage... See More ⇒
7.11. Size:225K lge
2sa1162 sot-23-3l.pdf
2SA162 SOT-23-3L Transistor(PNP) SOT-23-3L 1. BASE 2. EMITTER 2.92 0.35 3. COLLECTOR 1.17 Features 2.80 1.60 Low noise NF= 1dB(Typ.),10dB (Max.) Complementary to 2SC2712. Small Package. 0.15 1.90 MARKING SO , SY , SG Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base V... See More ⇒
7.12. Size:693K blue-rocket-elect
2sa1162.pdf
2SA1162 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features , , , , 2SC2712 High voltage and current, excellent hFE linearity, high hFE, low noise, complementary to 2SC2712. / ... See More ⇒
7.13. Size:1198K kexin
2sa1162.pdf
SMD Type Transistors PNP Transistors 2SA1162 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features High voltage and high current High hFE hFE = 70 400 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 Low noise NF = 1dB (typ.), 10dB (max) 1.9+0.1 -0.1 Complementary to 2SC2712 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol... See More ⇒
7.14. Size:1032K kexin
2sa1162-hf.pdf
SMD Type Transistors PNP Transistors 2SA1162-HF SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 3 Features High voltage and high current 1 2 High hFE hFE = 70 400 +0.02 +0.1 0.15 -0.02 0.95 -0.1 Low noise NF = 1dB (typ.), 10dB (max) +0.1 1.9-0.2 Complementary to 2SC2712-HF Pb-Free Package May be Available. The G-Suffix Denotes a 1. Base Pb-Fre... See More ⇒
7.15. Size:302K cn fosan
2sa1162.pdf
ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD 2SA1162 MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO -50 Vdc - Collector-Base Voltage VCBO -50 Vdc - Emitter-Base Voltage VEBO -5.0 Vdc - C... See More ⇒
Detailed specifications: DTA115EUB, DTD143ECHZG, EMX4, LSCR523EBFS8, SST2222AHZG, SST2907AHZG, UMF28N, UMT4401U3, 8550, 2SA1162O, 2SA1162Y, 2SA1201O, 2SA1201Y, 2SA1203-O, 2SA1203-Y, 2SA1362G, 2SA1362Y
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